公开(公告)号：US20220170156A1

公开(公告)日：2022-06-02

申请号：US17534604

申请日：2021-11-24

申请人： ASM IP Holding B.V.

发明人： Lucian C. Jdira ,  Chris G. M. de Ridder

IPC分类号： C23C16/455

摘要： The invention relates to an injector configured for arrangement within a reaction chamber of a substrate processing apparatus to inject gas in the reaction chamber. The injector may be elongated along a first axis and configured with an internal gas conduction channel extending along the first axis and provided with at least one gas entrance opening and at least one gas exit opening. The injector may have a width extending along a second axis perpendicular to the first axis substantially larger than a depth of the injector extending along a third axis perpendicular to the first and second axis. The wall of the injector may have a varying thickness.

公开(公告)号：US10954597B2

公开(公告)日：2021-03-23

申请号：US14660315

申请日：2015-03-17

申请人： ASM IP HOLDING B.V.

发明人： Chris G. M. de Ridder ,  Lucian C. Jdira ,  Bert Jongbloed ,  Jeroen A. Smeltink

IPC分类号： C23C16/458 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  C30B25/16 ,  H01L21/02 ,  H01J37/32 ,  F16J15/43

摘要： An atomic layer deposition apparatus including a deposition head that is rotatably mounted around a central deposition head axis and including a susceptor having an upper surface for carrying substrates. The lower surface comprises a plurality of process sections. Each process section includes a purge gas injection zone, a first precursor gas injection zone, a gas exhaust zone, a purge gas injection zone, a second precursor gas injection zone and a gas exhaust zone. Each zone radially extends from a radially inward part of the lower surface to a radially outward part of the lower surface of the deposition head. The combination of distance between the lower surface and the upper surface, the rotational speed of the deposition head and the flow rate and the pressure of the purge gas flows are selected such that the first and second precursor gases are substantially prevented from mixing.

公开(公告)号：US11227782B2

公开(公告)日：2022-01-18

申请号：US16935280

申请日：2020-07-22

申请人： ASM IP Holding B.V.

发明人： Chris G. M. de Ridder

IPC分类号： H01L21/677

摘要： Vertical batch furnace assembly for processing wafers comprising a cassette handling space, a wafer handling space, and a first wall separating the cassette handling space from the wafer handling space. The first wall has at least one wafer transfer opening in front of which a wafer transfer position for a wafer cassette is provided. The cassette handling space comprises a cassette storage, and a cassette handling mechanism. The cassette storage has a plurality of cassette storage positions and is configured to store a plurality of wafer cassettes. The cassette handling mechanism comprises a first cassette handler which is configured to transfer wafer cassettes between a first set of the cassette storage positions and the wafer transfer position. The cassette handling mechanism is provided with a second cassette handler which is configured to transfer wafer cassettes between a second set of the cassette storage positions and the wafer transfer position.

公开(公告)号：US10224222B2

公开(公告)日：2019-03-05

申请号：US14481131

申请日：2014-09-09

申请人： ASM IP Holding B.V.

发明人： Chris G. M. de Ridder ,  Theodorus G. M. Oosterlaken ,  Klaas P. Boonstra

IPC分类号： H01L21/67 ,  H01L21/683 ,  H01L21/673

摘要： An assembly of a liner and a support flange for a vertical furnace for processing wafers, wherein the support flange is configured for supporting the liner, at least two support members that are connected to the cylindrical wall, each having a downwardly directed supporting surface, wherein each downwardly directed supporting surface is positioned radially outwardly from the inner cylindrical surface, wherein the support flange and/or the liner are configured such that, when the liner is placed on the support flange, the downwardly directed supporting surfaces are in contact with an upper surface of the support flange and support the liner, and wherein at least the part of the lower end surface of the liner that bounds the inner cylindrical surface is spaced apart from the upper surface of the support flange.

公开(公告)号：US20150303079A1

公开(公告)日：2015-10-22

申请号：US14648380

申请日：2013-12-03

申请人： ASM IP HOLDING B.V.

发明人： Theodorus G. M. Oosterlaken ,  Chris G. M. de Ridder ,  Bert Jongbloed

IPC分类号： H01L21/67 ,  B23P6/00 ,  H01L21/673 ,  F27B1/20 ,  H01L21/687

CPC分类号： H01L21/67098 ,  B23P6/00 ,  F27B1/20 ,  H01L21/6719 ,  H01L21/67303 ,  H01L21/6735 ,  H01L21/67724 ,  H01L21/67775 ,  H01L21/68707

摘要： A vertical furnace processing system for processing semiconductor substrates, comprising the following modules:—a processing module including a vertical furnace; an I/O-station module including at least one load port to which a substrate cassette is dockable; a wafer handling module configured to transfer semiconductor substrates between the processing module and a substrate cassette docked to the load port of the I/O-station module; and a gas supply module including at least one gas supply or gas supply connection for providing the vertical furnace of the processing module with process gas, wherein at least two of the said modules are mutually decouplably coupled, such that said at least two modules are decouplable from one another to facilitate servicing of the system, and in particular the vertical furnace thereof.

摘要翻译： 一种用于处理半导体衬底的立式炉处理系统，包括以下模块： - 包括立式炉的处理模块; I / O站模块，其包括至少一个负载端口，衬底盒可停靠在该负载端口上; 晶片处理模块，被配置为在所述处理模块和与所述I / O站模块的负载端口对接的基板盒之间传送半导体衬底; 以及气体供应模块，其包括至少一个气体供应或气体供应连接，用于向处理模块的立式炉提供处理气体，其中至少两个所述模块相互去耦合，使得所述至少两个模块可去耦 从而方便维修系统，特别是其立式炉。

公开(公告)号：US10605530B2

公开(公告)日：2020-03-31

申请号：US15660805

申请日：2017-07-26

申请人： ASM IP Holding B.V.

发明人： Lucian C. Jdira ,  Chris G. M. de Ridder ,  Theodorus G. M. Oosterlaken ,  Klaas P. Boonstra ,  Herbert Terhorst ,  Juul Keijser

IPC分类号： F27D7/06 ,  F27B5/04 ,  F27B1/14 ,  F27B1/28 ,  F27B5/08 ,  F27B5/12 ,  F27B5/16 ,  F27D3/00 ,  F27D11/00 ,  H01L21/67

摘要： An assembly of a liner and a flange for a vertical furnace for processing substrates is provided. The liner being configured to extend in the interior of a process tube of the vertical furnace, and the flange is configured to at least partially close a liner opening. The liner comprising a substantially cylindrical wall delimited by the liner opening at a lower end and closed at a higher end and being substantially closed for gases above the liner opening and defining an inner space. The flange comprising: an inlet opening configured to insert and remove a boat configured to carry substrates in the inner space of the liner; a gas inlet to provide a gas to the inner space. The assembly is constructed and arranged with a gas exhaust opening to remove gas from the inner space and a space between the liner and the low pressure tube.

公开(公告)号：US09991139B2

公开(公告)日：2018-06-05

申请号：US14648380

申请日：2013-12-03

申请人： ASM IP HOLDING B.V.

发明人： Theodorus G. M. Oosterlaken ,  Chris G. M. de Ridder ,  Bert Jongbloed

IPC分类号： H01L21/677 ,  H01L21/67 ,  B23P6/00 ,  F27B1/20 ,  H01L21/673 ,  H01L21/687

CPC分类号： H01L21/67098 ,  B23P6/00 ,  F27B1/20 ,  H01L21/6719 ,  H01L21/67303 ,  H01L21/6735 ,  H01L21/67724 ,  H01L21/67775 ,  H01L21/68707

摘要： A vertical furnace processing system for processing semiconductor substrates, comprising the following modules: —a processing module including a vertical furnace; an I/O-station module including at least one load port to which a substrate cassette is dockable; a wafer handling module configured to transfer semiconductor substrates between the processing module and a substrate cassette docked to the load port of the I/O-station module; and a gas supply module including at least one gas supply or gas supply connection for providing the vertical furnace of the processing module with process gas, wherein at least two of the said modules are mutually decouplably coupled, such that said at least two modules are decouplable from one another to facilitate servicing of the system, and in particular the vertical furnace thereof.

公开(公告)号：US20160273105A1

公开(公告)日：2016-09-22

申请号：US14660315

申请日：2015-03-17

申请人： ASM IP HOLDING B.V.

发明人： Chris G. M. de Ridder ,  Lucian C. Jdira ,  Bert Jongbloed ,  Jeroen A. Smeltink

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23C16/44

CPC分类号： C23C16/4584 ,  C23C16/4412 ,  C23C16/45551 ,  C23C16/45563

摘要： An atomic layer deposition apparatus including a deposition head that is rotatably mounted around a central deposition head axis and including a susceptor having an upper surface for carrying substrates. The lower surface comprises a plurality of process sections. Each process section includes a purge gas injection zone, a first precursor gas injection zone, a gas exhaust zone, a purge gas injection zone, a second precursor gas injection zone and a gas exhaust zone. Each zone radially extends from a radially inward part of the lower surface to a radially outward part of the lower surface of the deposition head. The combination of distance between the lower surface and the upper surface, the rotational speed of the deposition head and the flow rate and the pressure of the purge gas flows are selected such that the first and second precursor gases are substantially prevented from mixing.

摘要翻译： 一种原子层沉积设备，包括可围绕中央沉积头轴线可旋转地安装并包括具有用于承载基底的上表面的基座的沉积头。 下表面包括多个处理部分。 每个处理部分包括净化气体注入区，第一前体气体注入区，排气区，吹扫气体注入区，第二前体气体注入区和排气区。 每个区域从沉积头的下表面的径向向内部分径向延伸到沉积头的下表面的径向向外部分。 选择下表面和上表面之间的距离，沉积头的旋转速度和吹扫气流的流速和压力的组合，使得基本上防止第一和第二前体气体混合。

公开(公告)号：US11587815B2

公开(公告)日：2023-02-21

申请号：US16935275

申请日：2020-07-22

申请人： ASM IP Holding B.V.

发明人： Chris G. M. de Ridder ,  Theodorus G. M. Oosterlaken

IPC分类号： H01L21/68 ,  H01L21/677 ,  F27B17/00 ,  B65G1/04 ,  F27D3/00 ,  H01L21/67 ,  H01L21/673 ,  F27D3/12

摘要： A vertical batch furnace assembly for processing wafers comprising a cassette handling space, a wafer handling space, and a first wall separating the cassette handling space from the wafer handling space. The wall having a wafer transfer opening. The wafer transfer opening is associated with a cassette carrousel comprising a carrousel stage having a plurality of cassette support surfaces each configured for supporting a wafer cassette. The carrousel stage is rotatable by an actuator around a substantially vertical axis to transfer each cassette support surface to a wafer transfer position in front of the wafer transfer opening and to at least one cassette load/retrieve position, wherein the vertical batch furnace assembly is configured to load or retrieve a wafer cassette on or from a cassette support surface of the carrousel stage which is in the at least one load/retrieve position.

公开(公告)号：US11587814B2

公开(公告)日：2023-02-21

申请号：US16935269

申请日：2020-07-22

申请人： ASM IP Holding B.V.

发明人： Chris G. M. de Ridder

IPC分类号： B65G1/04 ,  H01L21/677 ,  F27B17/00 ,  F27D3/12 ,  F27D3/00 ,  H01L21/67 ,  H01L21/673 ,  B65G1/06

摘要： A vertical batch furnace assembly for processing wafers comprising a cassette handling space, a wafer handling space, and an internal wall separating the cassette handling space and the wafer handling space. The cassette handling space is provided with a cassette storage configured to store a plurality of wafer cassettes provided with a plurality of wafers. The cassette handling space is also provided with a cassette handler configured to transfer wafer cassettes between the cassette storage and a wafer transfer position. The wafer handling space is provided with a wafer handler configured to transfer wafers between a wafer cassette in the wafer transfer position and a wafer boat in a wafer boat transfer position. The internal wall is provided with a wafer transfer opening adjacent the wafer transfer position for a wafer cassette from or to which wafers are to be transferred. The cassette storage comprises two cassette storage carousels.