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1.发明授权公开(公告)号：US11891696B2
公开(公告)日：2024-02-06
申请号：US17534604
申请日：2021-11-24
Applicant: ASM IP Holding B.V.
Inventor： Lucian C. Jdira , Chris G. M. de Ridder
IPC: C23C16/455
CPC classification number: C23C16/45578
Abstract: The invention relates to an injector configured for arrangement within a reaction chamber of a substrate processing apparatus to inject gas in the reaction chamber. The injector may be elongated along a first axis and configured with an internal gas conduction channel extending along the first axis and provided with at least one gas entrance opening and at least one gas exit opening. The injector may have a width extending along a second axis perpendicular to the first axis substantially larger than a depth of the injector extending along a third axis perpendicular to the first and second axis. The wall of the injector may have a varying thickness.
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公开(公告)号：US10900122B2
公开(公告)日：2021-01-26
申请号：US16304526
申请日：2016-05-27
Applicant: ASM IP Holding B.V.
Inventor： John Shugrue , Lucian C. Jdira , Chris G. M. de Ridder
IPC: C23C16/40 , C23C16/455 , C23C16/44
Abstract: A spatial atomic layer deposition apparatus (10), including a showerhead (16) with a showerhead side (18) having a center, a central area and a circumferential area. The apparatus also includes a susceptor (12) having a substrate support side that extends parallel to and of opposite the showerhead side forming a gap. The susceptor and the showerhead are rotatable relative to each other around an axis of rotation. The apparatus has a plurality of switchable showerhead sections. The apparatus also includes a plurality of multi-way valve assemblies. Each switchable showerhead section is fluidly connected with one of the plurality of multi-way valve assemblies, so as to fluidly connect a selected one of a plurality of different gas sources with that switchable showerhead section.
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3.发明申请公开(公告)号：US20190032998A1
公开(公告)日：2019-01-31
申请号：US15660805
申请日：2017-07-26
Applicant: ASM IP Holding B.V.
Inventor： Lucian C. Jdira , Chris G.M. de Ridder , Theodorus G.M. Oosterlaken , Klaas P. Boonstra , Herbert Terhorst , Juul Keijser
Abstract: An assembly of a liner and a flange for a vertical furnace for processing substrates is provided. The liner being configured to extend in the interior of a process tube of the vertical furnace, and the flange is configured to at least partially close a liner opening. The liner comprising a substantially cylindrical wall delimited by the liner opening at a lower end and closed at a higher end and being substantially closed for gases above the liner opening and defining an inner space. The flange comprising:an inlet opening configured to insert and remove a boat configured to carry substrates in the inner space of the liner;a gas inlet to provide a gas to the inner space. The assembly is constructed and arranged with a gas exhaust opening to remove gas from the inner space and a space between the liner and the low pressure tube.
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公开(公告)号：US12195852B2
公开(公告)日：2025-01-14
申请号：US17530161
申请日：2021-11-18
Applicant: ASM IP Holding B.V.
Inventor： Kornelius Haanstra , Lucian C. Jdira , Chris G. M. de Ridder , Robin Roelofs , Werner Knaepen , Herbert Terhorst
IPC: C23C16/455 , C23C16/458 , H01L21/673 , H01L21/687
Abstract: A substrate processing apparatus having a tube, a closed liner lining the interior surface of the tube, a plurality of gas injectors to provide a gas to an inner space of the liner, and, a gas exhaust duct to remove gas from the inner space is disclosed. The liner may have a substantially cylindrical wall delimited by a liner opening at a lower end and being substantially closed for gases above the liner opening. The apparatus may have a boat constructed and arranged moveable into the inner space via the liner opening and provided with a plurality of substrate holders for holding a plurality of substrates over a substrate support length in the inner space. Each of the gas injectors may have a single exit opening at the top and the exit openings of the plurality of injectors are substantially equally divided over the substrate support length.
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公开(公告)号：US10954597B2
公开(公告)日：2021-03-23
申请号：US14660315
申请日：2015-03-17
Applicant: ASM IP HOLDING B.V.
Inventor： Chris G. M. de Ridder , Lucian C. Jdira , Bert Jongbloed , Jeroen A. Smeltink
IPC: C23C16/458 , C23C16/44 , C23C16/455 , C30B25/14 , C30B25/16 , H01L21/02 , H01J37/32 , F16J15/43
Abstract: An atomic layer deposition apparatus including a deposition head that is rotatably mounted around a central deposition head axis and including a susceptor having an upper surface for carrying substrates. The lower surface comprises a plurality of process sections. Each process section includes a purge gas injection zone, a first precursor gas injection zone, a gas exhaust zone, a purge gas injection zone, a second precursor gas injection zone and a gas exhaust zone. Each zone radially extends from a radially inward part of the lower surface to a radially outward part of the lower surface of the deposition head. The combination of distance between the lower surface and the upper surface, the rotational speed of the deposition head and the flow rate and the pressure of the purge gas flows are selected such that the first and second precursor gases are substantially prevented from mixing.
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Patent Agency Ranking
公开(公告)号：US10683571B2
公开(公告)日：2020-06-16
申请号：US14188760
申请日：2014-02-25
Applicant: ASM IP Holding B.V.
Inventor： Lucian C. Jdira , Herbert Terhorst , Michael Halpin , Carl White , Todd Robert Dunn , Eric Shero , Melvin Verbass , Christopher Wuester , Kyle Fondurulia
IPC: C23C16/455 , H01L21/67 , H01J37/32
Abstract: A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.
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7.发明公开公开(公告)号：US20240167158A1
公开(公告)日：2024-05-23
申请号：US18425643
申请日：2024-01-29
Applicant: ASM IP Holding B.V.
Inventor： Lucian C. Jdira , Chris G.M. de Ridder
IPC: C23C16/455
CPC classification number: C23C16/45578
Abstract: The invention relates to an injector configured for arrangement within a reaction chamber of a substrate processing apparatus to inject gas in the reaction chamber. The injector may be elongated along a first axis and configured with an internal gas conduction channel extending along the first axis and provided with at least one gas entrance opening and at least one gas exit opening. The injector may have a width extending along a second axis perpendicular to the first axis substantially larger than a depth of the injector extending along a third axis perpendicular to the first and second axis. The wall of the injector may have a varying thickness.
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公开(公告)号：US20220268520A1
公开(公告)日：2022-08-25
申请号：US17668614
申请日：2022-02-10
Applicant: ASM IP Holding B.V.
Abstract: Vertical furnace reactor assembly, comprising: a reactor housing defining a processing chamber configured for processing substrates therein, the processing chamber having an opening for moving substrates into and out of the processing chamber along a main loading axis, the opening being surrounded by a stack of annular flange units including at least two of a housing flange, a gas divided ring unit, a liner suspension ring unit, a scavenger ring unit and a clamp ring unit, wherein at least two of the annular flange units are provided with mutually cooperating centering structures for centering the respective at least two flange units with respect to each other, wherein the mutually cooperating centering structures comprise a plurality of slots and a corresponding plurality of pins, wherein the slots each extend along a respective main slot axis, wherein the slot axes are directed to mutually intersect centrally with respect to the stack.
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9.发明申请公开(公告)号：US20220170156A1
公开(公告)日：2022-06-02
申请号：US17534604
申请日：2021-11-24
Applicant: ASM IP Holding B.V.
Inventor： Lucian C. Jdira , Chris G. M. de Ridder
IPC: C23C16/455
Abstract: The invention relates to an injector configured for arrangement within a reaction chamber of a substrate processing apparatus to inject gas in the reaction chamber. The injector may be elongated along a first axis and configured with an internal gas conduction channel extending along the first axis and provided with at least one gas entrance opening and at least one gas exit opening. The injector may have a width extending along a second axis perpendicular to the first axis substantially larger than a depth of the injector extending along a third axis perpendicular to the first and second axis. The wall of the injector may have a varying thickness.
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公开(公告)号：US20220162751A1
公开(公告)日：2022-05-26
申请号：US17530161
申请日：2021-11-18
Applicant: ASM IP Holding B.V.
Inventor： Kornelius Haanstra , Lucian C. Jdira , Chris G.M. de Ridder , Robin Roelofs , Werner Knaepen , Herbert Terhorst
IPC: C23C16/455 , H01L21/673 , H01L21/687 , C23C16/458
Abstract: A substrate processing apparatus having a tube, a closed liner lining the interior surface of the tube, a plurality of gas injectors to provide a gas to an inner space of the liner, and, a gas exhaust duct to remove gas from the inner space is disclosed. The liner may have a substantially cylindrical wall delimited by a liner opening at a lower end and being substantially closed for gases above the liner opening. The apparatus may have a boat constructed and arranged moveable into the inner space via the liner opening and provided with a plurality of substrate holders for holding a plurality of substrates over a substrate support length in the inner space. Each of the gas injectors may have a single exit opening at the top and the exit openings of the plurality of injectors are substantially equally divided over the substrate support length.
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