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公开(公告)号：US20210301391A1
公开(公告)日：2021-09-30
申请号：US17216260
申请日：2021-03-29
Applicant: ASM IP Holding B.V.
Inventor： Michael Eugene Givens , Eva Tois , Suvi Haukka , Daria Nevstrueva , Charles Dezelah
Abstract: In some embodiments, methods are provided for simultaneously and selectively depositing a first material on a first surface of a substrate and a second, different material on a second, different surface of the same substrate using the same reaction chemistries. For example, a first material may be selectively deposited on a metal surface while a second material is simultaneously and selectively deposited on an adjacent dielectric surface. The first material and the second material have different material properties, such as different etch rates.
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公开(公告)号：US20240177992A1
公开(公告)日：2024-05-30
申请号：US18519172
申请日：2023-11-27
Applicant: ASM IP Holding B.V.
Inventor： Andrea Illiberi , Shaoren Deng , Giuseppe Alessio Verni , Daria Nevstrueva , Marko Tuominen , Charles Dezelah , Daniele Chiappe , Eva Elisabeth Tois , Viraj Madhiwala , Michael Givens
IPC: H01L21/02
CPC classification number: H01L21/02337 , H01L21/02118 , H01L21/02205 , H01L21/0228
Abstract: The disclosure relates to methods of forming organic polymers comprising polyimide and layers comprising the same and to methods of reducing polyamic acid content of an organic polymer. The embodiments of the disclosure further relate to methods of fabricating semiconductor devices, to selectively depositing a material on a surface of a semiconductor substrate and to semiconductor processing assemblies. The methods are characterized by contacting a polyimide-containing material, such as a layer, with a modifying agent that increases the proportion of polyimide in the organic polymer material.
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3.发明公开公开(公告)号：US20230203644A1
公开(公告)日：2023-06-29
申请号：US18170286
申请日：2023-02-16
Applicant: ASM IP HOLDING B.V.
Inventor： Michael Eugene Givens , Eva Tois , Suvi Haukka , Daria Nevstrueva , Charles Dezelah
CPC classification number: C23C16/04 , C23C16/20 , C23C28/341 , C23C16/0281 , C23C16/45534 , C23C16/56
Abstract: In some embodiments, methods are provided for simultaneously and selectively depositing a first material on a first surface of a substrate and a second, different material on a second, different surface of the same substrate using the same reaction chemistries. For example, a first material may be selectively deposited on a metal surface while a second material is simultaneously and selectively deposited on an adjacent dielectric surface. The first material and the second material have different material properties, such as different etch rates.
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公开(公告)号：US11608557B2
公开(公告)日：2023-03-21
申请号：US17216260
申请日：2021-03-29
Applicant: ASM IP Holding B.V.
Inventor： Michael Eugene Givens , Eva Tois , Suvi Haukka , Daria Nevstrueva , Charles Dezelah
Abstract: In some embodiments, methods are provided for simultaneously and selectively depositing a first material on a first surface of a substrate and a second, different material on a second, different surface of the same substrate using the same reaction chemistries. For example, a first material may be selectively deposited on a metal surface while a second material is simultaneously and selectively deposited on an adjacent dielectric surface. The first material and the second material have different material properties, such as different etch rates.
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