公开(公告)号：US20230098114A1

公开(公告)日：2023-03-30

申请号：US17936607

申请日：2022-09-29

Applicant: ASM IP Holding, B.V.

Inventor： Eva Tois ,  Daniele Chiappe ,  Marko Tuominen ,  Viraj Madhiwala ,  Charles Dezelah ,  YongGyu Han ,  Anirudhan Chandrasekaran ,  Shaoren Deng

IPC: H01L21/02

Abstract: The present disclosure relates to methods and apparatuses for the manufacture of semiconductor devices. More particularly, the disclosure relates to methods and apparatuses for depositing an organic layer selectively on a substrate comprising at least two different surfaces. The process comprises providing a substrate in a reaction chamber, providing a first vapor-phase precursor in the reaction chamber, and providing a second vapor-phase precursor in the reaction chamber. In the method, the first and second vapor-phase precursors form the organic material selectively on the first surface relative to the second surface, and the first vapor-phase precursor comprises a diamine compound comprising at least five carbon atoms and the amine groups being attached to non-adjacent carbon atoms.

公开(公告)号：US20240222135A1

公开(公告)日：2024-07-04

申请号：US18398598

申请日：2023-12-28

Applicant: ASM IP Holding B.V.

Inventor： Daniele Chiappe ,  Viraj Madhiwala ,  Eva E. Tois ,  Marko Tuominen ,  Charles Dezelah ,  Shaoren Deng ,  Vincent Vandalon ,  Anirudhan Chandrasekaran

IPC: H01L21/3205 ,  H01L21/02 ,  H01L21/3213

CPC classification number: H01L21/32051 ,  H01L21/02068 ,  H01L21/02118 ,  H01L21/32135

Abstract: Methods for forming selective passivation layers on a dielectric surface relative to a metallic surface employing a chalcogenide layer are disclosed. Methods for utilizing selective passivation layers for depositing target films as also disclosed. Exemplary structures that include selective passivation layers are further disclosed.

公开(公告)号：US20220084817A1

公开(公告)日：2022-03-17

申请号：US17472981

申请日：2021-09-13

Applicant: ASM IP Holding B.V.

Inventor： Varun Sharma ,  Daniele Chiappe ,  Eva Tois ,  Viraj Madhiwala ,  Marko Tuominen ,  Charles Dezelah ,  Michael Givens ,  Tom Blomberg

IPC: H01L21/02

Abstract: The current disclosure relates to methods of depositing silicon oxide on a substrate, methods of forming a semiconductor device and a method of forming a structure. The method comprises providing a substrate in a reaction chamber, providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.

公开(公告)号：US12227835B2

公开(公告)日：2025-02-18

申请号：US18050114

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Viraj Madhiwala ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Charles Dezelah ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGyu Han ,  Michael Givens ,  Andrea Illiberi ,  Vincent Vandalon

IPC: C23C16/00 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32

Abstract: Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.

公开(公告)号：US20240177992A1

公开(公告)日：2024-05-30

申请号：US18519172

申请日：2023-11-27

Applicant: ASM IP Holding B.V.

Inventor： Andrea Illiberi ,  Shaoren Deng ,  Giuseppe Alessio Verni ,  Daria Nevstrueva ,  Marko Tuominen ,  Charles Dezelah ,  Daniele Chiappe ,  Eva Elisabeth Tois ,  Viraj Madhiwala ,  Michael Givens

IPC: H01L21/02

CPC classification number: H01L21/02337 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/0228

Abstract: The disclosure relates to methods of forming organic polymers comprising polyimide and layers comprising the same and to methods of reducing polyamic acid content of an organic polymer. The embodiments of the disclosure further relate to methods of fabricating semiconductor devices, to selectively depositing a material on a surface of a semiconductor substrate and to semiconductor processing assemblies. The methods are characterized by contacting a polyimide-containing material, such as a layer, with a modifying agent that increases the proportion of polyimide in the organic polymer material.

公开(公告)号：US20240162036A1

公开(公告)日：2024-05-16

申请号：US18388548

申请日：2023-11-10

Applicant: ASM IP Holding B.V.

Inventor： Viraj Madhiwala ,  Eva Elisabeth Tois ,  Daniele Chiappe ,  Marko Tuominen

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/0217 ,  C23C16/308 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45527 ,  C23C16/56 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02312

Abstract: The disclosure relates to methods and deposition assemblies for selectively depositing material including silicon and nitrogen on a first surface of a substrate relative to the second surface of the same substrate. In the disclosure, material including silicon and nitrogen is selectively deposited on a first surface of a substrate relative to a second surface of the same substrate by a cyclic deposition process by providing a substrate in a reaction chamber, providing a silicon precursor comprising silicon and halogen into the reaction chamber in a vapor phase and providing a nitrogen precursor into the reaction chamber in a vapor phase to form the material including silicon and nitrogen on the first surface.

公开(公告)号：US20230139917A1

公开(公告)日：2023-05-04

申请号：US18050128

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Eva Tois ,  Viraj Madhiwala ,  Daniele Chiappe ,  Marko Tuominen ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGuy Han ,  Michael Givens ,  Andrea Illiberi ,  Vincent Vandalon

IPC: C23C16/455

Abstract: Methods and vapor deposition assemblies of selectively depositing dielectric material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, performing a thermal deposition subcycle performing a thermal deposition subcycle to selectively deposit a first material on the first surface, performing a plasma deposition subcycle to selectively deposit a second material on the first surface; wherein at least one of the first material and the second material comprises silicon and oxygen.

公开(公告)号：US20250037988A1

公开(公告)日：2025-01-30

申请号：US18914437

申请日：2024-10-14

Applicant: ASM IP Holding B.V.

Inventor： Varun Sharma ,  Daniele Chiappe ,  Eva Tois ,  Viraj Madhiwala ,  Marko Tuominen ,  Charles Dezelah ,  Michael Givens ,  Tom Blomberg

IPC: H01L21/02

Abstract: The current disclosure relates to methods of depositing silicon oxide on a substrate, methods of forming a semiconductor device and a method of forming a structure. The method comprises providing a substrate in a reaction chamber, providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.

公开(公告)号：US20240282572A1

公开(公告)日：2024-08-22

申请号：US18441148

申请日：2024-02-14

Applicant: ASM IP Holding B.V.

Inventor： Viraj Madhiwala ,  Vincent Vandalon ,  Nadadur Veeraraghavan Srinath ,  Eva Tois ,  Shaoren Deng ,  Daniele Chiappe ,  Marko Tuominen ,  Charles Dezelah ,  YongGyu Han ,  Kranthi Kumar Vaidyula ,  Glen Wilk ,  David Zanders ,  Aranzazu Maestre Caro

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/02205 ,  C23C16/04 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45527 ,  C23C16/45544 ,  H01L21/02175 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/0228

Abstract: The disclosure relates to methods and processing assemblies selectively depositing metal oxide by cyclic vapor deposition techniques. Such methods may be used for, for example, processing semiconductor substrates. More particularly, the disclosure relates to methods and assemblies for selectively depositing a metal oxide layer. Various embodiments of the current disclosure relate to selective deposition of metal oxide layers, such as dielectric layers, etch stop layers and threshold voltage shifting layers. In particular, the disclosure relates to the deposition of metal oxide layers, such as yttrium oxide (Y2O3), and doped metal oxide layers, such as yttrium-doped aluminum oxide (AlYOx) by cyclic vapor deposition processes.

公开(公告)号：US20240222111A1

公开(公告)日：2024-07-04

申请号：US18396357

申请日：2023-12-26

Applicant: ASM IP Holding B.V.

Inventor： Viraj Madhiwala ,  Eva E. Tois ,  Daniele Chiappe ,  Marko Tuominen

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/02046 ,  H01L21/0206 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02304 ,  H01L21/02312

Abstract: Methods for selectively forming a dielectric layer on a metallic surface relative to a dielectric surface are disclosed. The disclosed selective formation methods include selective passivation processes, and selective deposition processes.