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    SILICON OXIDE DEPOSITION METHOD
    1.
    发明申请
    SILICON OXIDE DEPOSITION METHOD 有权

    公开(公告)号：US20220084817A1

    公开(公告)日：2022-03-17

    申请号：US17472981

    申请日：2021-09-13

    申请人： ASM IP Holding B.V.

    发明人： Varun Sharma ,  Daniele Chiappe ,  Eva Tois ,  Viraj Madhiwala ,  Marko Tuominen ,  Charles Dezelah ,  Michael Givens ,  Tom Blomberg

    IPC分类号： H01L21/02

    摘要： The current disclosure relates to methods of depositing silicon oxide on a substrate, methods of forming a semiconductor device and a method of forming a structure. The method comprises providing a substrate in a reaction chamber, providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.

    Selective deposition using hydrophobic precursors
    3.
    发明授权
    Selective deposition using hydrophobic precursors 有权

    公开(公告)号：US11081342B2

    公开(公告)日：2021-08-03

    申请号：US15581726

    申请日：2017-04-28

    申请人： ASM IP HOLDING B.V.

    发明人： Elina Färm ,  Hidemi Suemori ,  Raija Matero ,  Antti Niskanen ,  Suvi P. Haukka ,  Eva Tois

    IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/32

    摘要： Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyuria or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.

    PLASMA ENHANCED DEPOSITION PROCESSES FOR CONTROLLED FORMATION OF METAL OXIDE THIN FILMS
    5.
    发明申请
    PLASMA ENHANCED DEPOSITION PROCESSES FOR CONTROLLED FORMATION OF METAL OXIDE THIN FILMS 审中-公开

    公开(公告)号：US20180350587A1

    公开(公告)日：2018-12-06

    申请号：US15971601

    申请日：2018-05-04

    申请人： ASM IP Holding B.V.

    发明人： Lingyun Jia ,  Viljami J. Pore ,  Marko Tuominen ,  Sun Ja Kim ,  Oreste Madia ,  Eva Tois ,  Suvi Haukka ,  Toshiya Suzuki

    IPC分类号： H01L21/02 ,  H01L21/311

    摘要： Methods for depositing oxide thin films, such as metal oxide, metal silicates, silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first reactant that comprises oxygen and a component of the oxide, and a second reactant comprising reactive species that does not include oxygen species. In some embodiments the plasma power used to generate the reactive species can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features. In some embodiments oxide thin films are selectively deposited on a first surface of a substrate relative to a second surface, such as on a dielectric surface relative to a metal or metallic surface.

    Selective PEALD of oxide on dielectric
    10.
    发明授权
    Selective PEALD of oxide on dielectric 有权

    公开(公告)号：US11170993B2

    公开(公告)日：2021-11-09

    申请号：US16605475

    申请日：2018-05-03

    申请人： ASM IP Holding B.V.

    发明人： Eva Tois ,  Viljami Pore ,  Suvi Haukka ,  Toshiya Suzuki ,  Lingyun Jia ,  Sun Ja Kim ,  Oreste Madia

    IPC分类号： C23C16/40 ,  H01L21/02 ,  C23C16/455

    摘要： Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.