公开(公告)号：US11830731B2

公开(公告)日：2023-11-28

申请号：US17074887

申请日：2020-10-20

Applicant: ASM IP HOLDING B.V.

Inventor： Dinkar Nandwana ,  Eric James Shero ,  Carl Louis White ,  Todd Robert Dunn ,  William George Petro ,  Jereld Lee Winkler ,  Aniket Chitale

IPC: C23C16/455 ,  H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/45544 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189

Abstract: The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold and methods of using the semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold has a bore, a first supply channel, and a second supply channel. Advantageously, the first supply channel and the second supply channel merge with the bore in an offset fashion which leads to reduced cross-contamination within the supply channels.

公开(公告)号：US20210118668A1

公开(公告)日：2021-04-22

申请号：US17074887

申请日：2020-10-20

Applicant: ASM IP HOLDING B.V.

Inventor： Dinkar Nandwana ,  Eric James Shero ,  Carl Louis White ,  Todd Robert Dunn ,  William George Petro ,  Jereld Lee Winkler ,  Aniket Chitale

IPC: H01L21/02 ,  C23C16/455

Abstract: The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold and methods of using the semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold has a bore, a first supply channel, and a second supply channel. Advantageously, the first supply channel and the second supply channel merge with the bore in an offset fashion which leads to reduced cross-contamination within the supply channels.

公开(公告)号：US20240071805A1

公开(公告)日：2024-02-29

申请号：US18238577

申请日：2023-08-28

Applicant: ASM IP Holding B.V.

Inventor： Han Ye ,  Peipei Gao ,  Wentao Wang ,  Aniket Chitale ,  Xing Lin ,  Alexandros Demos ,  Yanfu Lu

IPC: H01L21/687 ,  H01L21/67

CPC classification number: H01L21/68735 ,  H01L21/67069

Abstract: Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor ring and at least one injector tube. The injector tube can be disposed within the susceptor ring to provide a gas to a lower chamber area of a reactor. Methods, systems, and assemblies can be used to obtain desired etching and purging of the lower chamber area.

公开(公告)号：US20240222187A1

公开(公告)日：2024-07-04

申请号：US18397372

申请日：2023-12-27

Applicant: ASM IP Holding B.V.

Inventor： Aniket Chitale ,  Felix Rabinovich ,  Gary Urban Keppers ,  Han Ye ,  Bradley Wayne Evans ,  Wentao Wang ,  Gregory Rosendahl ,  Amin Azimi

IPC: H01L21/687 ,  C23C16/44 ,  C23C16/458

CPC classification number: H01L21/68792 ,  C23C16/4412 ,  C23C16/4581 ,  H01L21/68785

Abstract: A shaft member includes a cylindrical body formed from a ceramic material and having a drive segment, a frustoconical segment, and an end key segment. The drive segment extends about a rotation axis, the frustoconical segment is offset from the drive segment along the rotation axis, and the end key segment extends axially from the frustoconical segment and is axially separated from the drive segment by the frustoconical segment of the shaft member. The end key segment has a first circumferential facet and a second circumferential facet circumferentially opposite the first circumferential facet to fix the shaft member in rotation about the rotation axis relative to a support member seated when the end key segment is slidably received within an end key socket defined within the support member. Process kits, semiconductor processing systems, and methods of making semiconductor processing systems are also described.

公开(公告)号：US20250034714A1

公开(公告)日：2025-01-30

申请号：US18784060

申请日：2024-07-25

Applicant: ASM IP Holding B.V.

Inventor： Wentao Wang ,  Peipei Gao ,  Kishor Patil ,  Aniket Chitale ,  Fan Gao ,  Xing Lin ,  Alexandros Demos ,  Amir Kajbafvala ,  Emesto Suarez ,  Arun Murali ,  Caleb Miskin ,  Bubesh Babu Jotheeswaran

IPC: C23C16/46 ,  C23C16/06 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12 ,  C30B29/52 ,  H01L21/02

Abstract: A reflector includes a reflector body having a slotted surface, a planar surface, and an ellipsoidal surface. The planar surface is opposite the slotted surface and is separated from the slotted surface by a thickness of the reflector body. The ellipsoidal surface is offset from the planar surface, is opposite the slotted surface and separated from the slotted surface by the thickness of the reflector body and spans the slotted surface of the reflector body. The ellipsoidal surface defines an elliptical profile that is orthogonal relative to the planar surface to concentrate heat flux at a distal focus of the elliptical profile using electromagnetic radiation reflected by the ellipsoidal surface of the reflector body. Semiconductor processing systems and material layer deposition methods are also described.