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公开(公告)号：US20240321579A1
公开(公告)日：2024-09-26
申请号：US18608609
申请日：2024-03-18
Applicant: ASM IP Holding B.V.
Inventor： Devika Choudhury , Jereld Lee Winkler , Kamesh Mullapudi , Mihaela Balseanu , Michael Schmotzer
IPC: H01L21/02 , H01L21/033 , H01L21/311
CPC classification number: H01L21/02661 , H01L21/0332 , H01L21/31111 , H01L21/31144
Abstract: Methods for forming a semiconductor structure are disclosed. The methods include forming a bilayer hardmask by depositing a first hardmask layer and a second hardmask layer over a substrate including a first region and a second region. Exemplary structures formed can include CMOS device structures.
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公开(公告)号：US20240218512A1
公开(公告)日：2024-07-04
申请号：US18395822
申请日：2023-12-26
Applicant: ASM IP Holding B.V.
Inventor： Madhan Kumar Arulanandam , Balaji Kannan , Jereld Lee Winkler
IPC: C23C16/455
CPC classification number: C23C16/45561 , C23C16/45544 , C23C16/45557 , C23C16/45591
Abstract: Various embodiments of the present technology may provide an accumulator having an interior region defined by a plurality of sidewalls. The accumulator may include an inlet disposed in a first sidewall and an outlet disposed within a second sidewall. The accumulator may also include a piston disposed within the interior region and a rod coupled to the piston, wherein the rod extends outside the interior region through a third sidewall.
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公开(公告)号：US20240165681A1
公开(公告)日：2024-05-23
申请号：US18509375
申请日：2023-11-15
Applicant: ASM IP Holding B.V.
Inventor： Jereld Lee Winkler , Paul Ma , Eric James Shero , Shubham Garg , Jonathan Bakke , Todd Dunn , Jacqueline Wrench , Shuaidi Zhang
CPC classification number: B08B9/0813 , B08B9/46 , B08B2209/08
Abstract: Various embodiments of the present technology may provide methods and apparatus for cleaning a source vessel. The source vessel may be filled or partially filled with a solvent to form a solution. The solution is removed from the source vessel and contained in a waste vessel that is connected to the source vessel. The waste vessel may have a bellow or other mechanism inside of it to create a negative pressure in the waste vessel to pull the solution out of the source vessel and into the waste vessel. Alternatively, a liquid pump may be used to pull the solution from the source vessel to the waste vessel.
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公开(公告)号：US11967488B2
公开(公告)日：2024-04-23
申请号：US17744902
申请日：2022-05-16
Applicant: ASM IP Holding B.V.
Inventor： Suvi Haukka , Eric James Shero , Fred Alokozai , Dong Li , Jereld Lee Winkler , Xichong Chen
CPC classification number: H01J37/32495 , C23C16/32 , C23C16/4404 , C23C16/4405
Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
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公开(公告)号：US20240026538A1
公开(公告)日：2024-01-25
申请号：US18376025
申请日：2023-10-03
Applicant: ASM IP Holding B.V.
Inventor： Jereld Lee Winkler
IPC: C23C16/455 , C23C16/448 , H01L21/67
CPC classification number: C23C16/45557 , C23C16/45527 , C23C16/45544 , C23C16/4481 , C23C16/45587 , C23C16/45561 , H01L21/67017
Abstract: A semiconductor processing device is disclosed. The semiconductor device includes a reactor and a vaporizer configured to provide a reactant vapor to the reactor. The device can include a process control chamber between the vaporizer and the reactor. The device can include a control system configured to modulate a pressure in the process control chamber based at least in part on feedback of measured pressure in the process control chamber.
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Patent Agency Ranking
公开(公告)号：US20240014012A9
公开(公告)日：2024-01-11
申请号：US17744902
申请日：2022-05-16
Applicant: ASM IP Holding B.V.
Inventor： Suvi Haukka , Eric James Shero , Fred Alokozai , Dong Li , Jereld Lee Winkler , Xichong Chen
CPC classification number: H01J37/32495 , C23C16/4405 , C23C16/4404 , C23C16/32
Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
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公开(公告)号：US10774422B2
公开(公告)日：2020-09-15
申请号：US15996350
申请日：2018-06-01
Applicant: ASM IP HOLDING B.V.
Inventor： Jereld Lee Winkler , Cheuk Li , Michael F. Schultz , John Kevin Shugrue
IPC: C23C16/455 , H01L21/67 , C23C16/458 , C23C16/52
Abstract: A semiconductor processing device can include a reactor assembly comprising a reaction chamber sized to receive a substrate therein. An exhaust line can be in fluid communication with the reaction chamber, the exhaust line configured to transfer gas out of the reaction chamber. A valve can be disposed along the exhaust line to regulate the flow of the gas along the exhaust line. A control system can be configured to operate in an open loop control mode to control the operation of the valve.
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公开(公告)号：US20180127876A1
公开(公告)日：2018-05-10
申请号：US15860564
申请日：2018-01-02
Applicant: ASM IP Holding B.V.
Inventor： John Tolle , Eric Hill , Jereld Lee Winkler
IPC: C23C16/46 , H01J37/32 , C23C16/50 , C23C16/452 , C23C16/52
Abstract: A system and method for providing intermediate reactive species to a reaction chamber are disclosed. The system includes an intermediate reactive species formation chamber fluidly coupled to the reaction chamber to provide intermediate reactive species to the reaction chamber. A pressure control device can be used to control an operating pressure of the intermediate reactive species formation chamber, and a heater can be used to heat the intermediate reactive species formation chamber to a desired temperature.
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公开(公告)号：US20170011889A1
公开(公告)日：2017-01-12
申请号：US15273488
申请日：2016-09-22
Applicant: ASM IP Holding B.V.
Inventor： Jereld Lee Winkler
IPC: H01J37/32 , C23C16/455 , B08B7/00 , C23C16/50
CPC classification number: H01J37/32449 , B08B7/0035 , C23C16/452 , C23C16/45536 , C23C16/45538 , C23C16/50 , C23C16/507 , H01J37/32357 , H01J37/32422 , H01J37/32816 , H01J2237/332 , H01J2237/334 , H01J2237/335
Abstract: A system and method for providing pulsed excited species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as reactive species from the remote plasma unit are pulsed to the reaction chamber.
Abstract translation: 公开了一种从远程等离子体单元向反应室提供脉冲激发物质的系统和方法。 该系统包括压力控制装置，用于控制远程等离子体单元处的压力，因为来自远程等离子体单元的反应物质被脉冲到反应室。
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公开(公告)号：US20160376700A1
公开(公告)日：2016-12-29
申请号：US15262990
申请日：2016-09-12
Applicant: ASM IP Holding B.V.
Inventor： Suvi Haukka , Eric James Shero , Fred Alokozai , Dong Li , Jereld Lee Winkler , Xichong Chen
IPC: C23C16/44
CPC classification number: C23C16/4405 , C23C16/32 , C23C16/4404 , H01L21/28556 , H01L21/32051 , H01L21/76843
Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
Abstract translation: 公开了一种用于处理沉积反应器的系统和方法。 该系统和方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺铝的碳化钛膜或铝掺杂的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。
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