公开(公告)号：US20190304821A1

公开(公告)日：2019-10-03

申请号：US15940759

申请日：2018-03-29

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Werner Knaepen ,  Bert Jongbloed ,  Cornelis Thaddeus Herbschleb ,  Hessel Sprey

IPC: H01L21/673 ,  H01L21/306 ,  H01L21/02 ,  C23C16/48 ,  H01L21/67

Abstract: The invention relates to a substrate rack and a substrate processing system for processing substrates in a reaction chamber. The substrate rack may be used for introducing a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the substrates in a spaced apart relationship. The rack may have an illumination system to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.

公开(公告)号：US11088002B2

公开(公告)日：2021-08-10

申请号：US15940759

申请日：2018-03-29

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Werner Knaepen ,  Bert Jongbloed ,  Cornelis Thaddeus Herbschleb ,  Hessel Sprey

IPC: H01L21/673 ,  H01L21/306 ,  H01L21/67 ,  C23C16/48 ,  H01L21/02

Abstract: The invention relates to a substrate rack and a substrate processing system for processing substrates in a reaction chamber. The substrate rack may be used for introducing a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the substrates in a spaced apart relationship. The rack may have an illumination system to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.

公开(公告)号：US20230127177A1

公开(公告)日：2023-04-27

申请号：US18046637

申请日：2022-10-14

Applicant: ASM IP Holding B.V.

Inventor： Cornelis Thaddeus Herbschleb ,  Kelly Houben

IPC: C23C16/44 ,  H01L21/02 ,  C23C16/34 ,  C23C16/458

Abstract: A method for particle abatement in a semiconductor apparatus is provided. In a preferred embodiment, the method comprises processing a substrate in a process chamber of the semiconductor processing apparatus. The processing comprises loading the substrate in the process chamber having one or more inner surfaces, providing a reaction gas mixture to the process chamber, thereby forming a substrate film and a chamber wall film, and loading the substrate out of the process chamber. The method further comprises repeating the processing step one or more times until the chamber wall film has reached a pre-determined chamber wall film thickness, upon which exposing the inner surfaces to an ambient, thereby modifying at least an upper portion of the chamber wall film, thus reducing a probability of particle formation in the process chamber.

公开(公告)号：US11230766B2

公开(公告)日：2022-01-25

申请号：US15940729

申请日：2018-03-29

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Cornelis Thaddeus Herbschleb ,  Werner Knaepen ,  Bert Jongbloed ,  Steven Van Aerde ,  Kelly Houben ,  Theodorus Oosterlaken ,  Chris de Ridder ,  Lucian Jdira

IPC: C23C16/458 ,  C23C16/56 ,  C23C16/455 ,  C23C16/48 ,  C23C16/50 ,  C23C16/44

Abstract: The invention relates to a substrate processing apparatus comprising a reaction chamber provided with a substrate rack for holding a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the plurality of substrates. The apparatus may have an illumination system constructed and arranged to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.

公开(公告)号：US20190301014A1

公开(公告)日：2019-10-03

申请号：US15940729

申请日：2018-03-29

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Cornelis Thaddeus Herbschleb ,  Werner Knaepen ,  Bert Jongbloed ,  Steven Van Aerde ,  Kelly Houben ,  Theodorus Oosterlaken ,  Chris de Ridder ,  Lucian Jdira

IPC: C23C16/458 ,  C23C16/56 ,  C23C16/50 ,  C23C16/48 ,  C23C16/455

Abstract: The invention relates to a substrate processing apparatus comprising a reaction chamber provided with a substrate rack for holding a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the plurality of substrates. The apparatus may have an illumination system constructed and arranged to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.