公开(公告)号：US20220119944A1

公开(公告)日：2022-04-21

申请号：US17451299

申请日：2021-10-18

Applicant: ASM IP HOLDING B.V.

Inventor： Shinya Yoshimoto ,  Takahiro Onuma ,  Makoto Igarashi ,  Yukihiro Mori ,  Hideaki Fukuda ,  Rene Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/52

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

公开(公告)号：US20200027746A1

公开(公告)日：2020-01-23

申请号：US16040859

申请日：2018-07-20

Applicant: ASM IP Holding B.V.

Inventor： Rene Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Takayoshi Tsutsumi ,  Masaru Hori

IPC: H01L21/311 ,  H01L21/02

Abstract: An etching process is provided that includes a pre-clean process to remove a surface oxide of a dielectric material. The removal of the oxide can be executed through a thermal reaction and/or plasma process before the etch process. In some embodiments, the removal of the oxide increases etch process control and reproducibility and can improve the selectivity versus oxides.

公开(公告)号：US12129546B2

公开(公告)日：2024-10-29

申请号：US17451299

申请日：2021-10-18

Applicant: ASM IP HOLDING B.V.

Inventor： Shinya Yoshimoto ,  Takahiro Onuma ,  Makoto Igarashi ,  Yukihiro Mori ,  Hideaki Fukuda ,  Rene Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/52

CPC classification number: C23C16/45527 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/46 ,  C23C16/52

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

公开(公告)号：US10720337B2

公开(公告)日：2020-07-21

申请号：US16040859

申请日：2018-07-20

Applicant: ASM IP Holding B.V.

Inventor： Rene Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Takayoshi Tsutsumi ,  Masaru Hori

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67

Abstract: An etching process is provided that includes a pre-clean process to remove a surface oxide of a dielectric material. The removal of the oxide can be executed through a thermal reaction and/or plasma process before the etch process. In some embodiments, the removal of the oxide increases etch process control and reproducibility and can improve the selectivity versus oxides.

公开(公告)号：US10720334B2

公开(公告)日：2020-07-21

申请号：US16041044

申请日：2018-07-20

Applicant: ASM IP Holding B.V.

Inventor： Rene Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Takayoshi Tsutsumi ,  Masaru Hori

IPC: H01L21/306 ,  H01L21/3065 ,  H01L21/3213 ,  C23C16/02 ,  B81C1/00 ,  C30B31/00 ,  C30B33/08 ,  C30B33/12 ,  H01L21/311 ,  H01L21/308 ,  H01L21/3105

Abstract: In some embodiments, a selective cyclic (optionally dry) etching of a first surface of a substrate relative to a second surface of the substrate in a reaction chamber by chemical atomic layer etching comprises forming a modification layer using a first plasma and etching the modification layer. The first surface comprises carbon and/or nitride and the second surface does not comprise carbon and/or nitride.

公开(公告)号：US20200027740A1

公开(公告)日：2020-01-23

申请号：US16041044

申请日：2018-07-20

Applicant: ASM IP Holding B.V.

Inventor： Rene Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Takayoshi Tsutsumi ,  Masaru Hori

IPC: H01L21/3065 ,  H01L21/3213

Abstract: In some embodiments, a selective cyclic (optionally dry) etching of a first surface of a substrate relative to a second surface of the substrate in a reaction chamber by chemical atomic layer etching comprises forming a modification layer using a first plasma and etching the modification layer. The first surface comprises carbon and/or nitride and the second surface does not comprise carbon and/or nitride.