公开(公告)号：US20150118846A1

公开(公告)日：2015-04-30

申请号：US14065114

申请日：2013-10-28

Applicant: ASM IP Holding B.V.

Inventor： Yoshihiro Isii ,  Ryu Nakano ,  Naoki Inoue

IPC: H01L21/027 ,  H01L21/3065

CPC classification number: H01L21/0273 ,  H01J37/32091 ,  H01J37/32146 ,  H01L21/0337 ,  H01L21/31138

Abstract: A method for trimming a carbon-containing film includes: (i) providing a substrate having a carbon-containing film formed thereon; (ii) supplying a trimming gas and a rare gas to the reaction space, which trimming gas includes an oxygen-containing gas; and (iii) applying RF power between the electrodes to generate a plasma using the trimming gas and the rare gas and to thereby trim the carbon-containing film while controlling a trimming rate at 55 nm/min or less as a function of at least one parameter selected from the group consisting of a flow rate of an oxygen-containing gas, a flow rate of nitrogen-containing gas to be added to the oxygen-containing gas, pressure in the reaction space, RF power, a duty cycle of RF power, a distance between the electrodes, and a temperature of a susceptor on which the substrate is placed.

Abstract translation: 一种修整含碳膜的方法包括：（i）提供其上形成有含碳膜的基材; （ii）向所述反应空间供给修整气体和稀有气体，所述修整气体包括含氧气体; 并且（iii）在电极之间施加RF功率以使用修整气体和稀有气体产生等离子体，并且由此修整含碳膜，同时以55nm / min以下的修整速率控制为至少一个 参数，选自含氧气体的流量，添加到含氧气体中的含氮气体的流量，反应空间中的压力，RF功率，RF功率的占空比 ，电极之间的距离以及放置基板的基座的温度。

公开(公告)号：US09343308B2

公开(公告)日：2016-05-17

申请号：US14065114

申请日：2013-10-28

Applicant: ASM IP Holding B.V.

Inventor： Yoshihiro Isii ,  Ryu Nakano ,  Naoki Inoue

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/033 ,  H01J37/32

CPC classification number: H01L21/0273 ,  H01J37/32091 ,  H01J37/32146 ,  H01L21/0337 ,  H01L21/31138

Abstract: A method for trimming a carbon-containing film includes: (i) providing a substrate having a carbon-containing film formed thereon; (ii) supplying a trimming gas and a rare gas to the reaction space, which trimming gas includes an oxygen-containing gas; and (iii) applying RF power between the electrodes to generate a plasma using the trimming gas and the rare gas and to thereby trim the carbon-containing film while controlling a trimming rate at 55 nm/min or less as a function of at least one parameter selected from the group consisting of a flow rate of an oxygen-containing gas, a flow rate of nitrogen-containing gas to be added to the oxygen-containing gas, pressure in the reaction space, RF power, a duty cycle of RF power, a distance between the electrodes, and a temperature of a susceptor on which the substrate is placed.

Abstract translation: 一种修整含碳膜的方法包括：（i）提供其上形成有含碳膜的基材; （ii）向所述反应空间供给修整气体和稀有气体，所述修整气体包括含氧气体; 并且（iii）在电极之间施加RF功率以使用修整气体和稀有气体产生等离子体，并且由此修整含碳膜，同时以55nm / min以下的修整速率控制为至少一个 参数，选自含氧气体的流量，添加到含氧气体中的含氮气体的流量，反应空间中的压力，RF功率，RF功率的占空比 ，电极之间的距离以及放置基板的基座的温度。