公开(公告)号：US20180282869A1

公开(公告)日：2018-10-04

申请号：US15471376

申请日：2017-03-28

Applicant: ASM IP Holding B.V.

Inventor： Yoshio SUSA

IPC: C23C16/455 ,  C23C16/503 ,  C23C16/505 ,  C23C16/458 ,  H01J37/32

Abstract: A shower plate includes a plate part provided with a plurality of through holes and formed of a conductor, a ring-shaped part connected to an outer edge of the plate part, surrounding the plate part and formed of a conductor, and a lead wire embedded in the ring-shaped part and surrounding the plate part in plan view.

公开(公告)号：US20200211827A1

公开(公告)日：2020-07-02

申请号：US16813356

申请日：2020-03-09

Applicant: ASM IP Holding B.V.

Inventor： Yoshio SUSA

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a chamber, a susceptor provided in the chamber, a shower plate having a plate part provided with a plurality of through holes and formed of a conductor, a ring-shaped part connected to an outer edge of the plate part, surrounding the plate part and formed of a conductor and a lead wire embedded in the ring-shaped part and surrounding the plate part and the susceptor in plan view, the shower plate being provided so as to face the susceptor in the chamber, and a DC power supply that supplies a direct current to the lead wire.

公开(公告)号：US20190074172A1

公开(公告)日：2019-03-07

申请号：US15695147

申请日：2017-09-05

Applicant: ASM IP Holding B.V.

Inventor： Yoshio SUSA ,  Yuko KENGOYAMA ,  Taishi EBISUDANI

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/033 ,  H01L21/311 ,  C23C16/455 ,  C23C16/56 ,  C23C16/40

Abstract: Examples of a film forming method includes repeating first processing and second processing in this order a plurality of times, wherein the first processing supplies material-1 having one silicon atom per molecule onto a substrate, and then generates plasma while reactant gas is introduced, thereby forming a silicon oxide film on the substrate, and the second processing provides material-2 having two or more silicon atoms per molecule onto the substrate, and then generates plasma while no reactant gas is introduced, thereby forming a double silicon compound on the substrate.

公开(公告)号：US20180286638A1

公开(公告)日：2018-10-04

申请号：US15890850

申请日：2018-02-07

Applicant: ASM IP Holding B.V.

Inventor： Yoshio SUSA

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a chamber, a susceptor provided in the chamber, a shower plate having a plate part provided with a plurality of through holes and formed of a conductor, a ring-shaped part connected to an outer edge of the plate part, surrounding the plate part and formed of a conductor and a lead wire embedded in the ring-shaped part and surrounding the plate part and the susceptor in plan view, the shower plate being provided so as to face the susceptor in the chamber, and a DC power supply that supplies a direct current to the lead wire.