公开(公告)号：US20190074172A1

公开(公告)日：2019-03-07

申请号：US15695147

申请日：2017-09-05

Applicant: ASM IP Holding B.V.

Inventor： Yoshio SUSA ,  Yuko KENGOYAMA ,  Taishi EBISUDANI

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/033 ,  H01L21/311 ,  C23C16/455 ,  C23C16/56 ,  C23C16/40

Abstract: Examples of a film forming method includes repeating first processing and second processing in this order a plurality of times, wherein the first processing supplies material-1 having one silicon atom per molecule onto a substrate, and then generates plasma while reactant gas is introduced, thereby forming a silicon oxide film on the substrate, and the second processing provides material-2 having two or more silicon atoms per molecule onto the substrate, and then generates plasma while no reactant gas is introduced, thereby forming a double silicon compound on the substrate.

公开(公告)号：US20200027685A1

公开(公告)日：2020-01-23

申请号：US16040755

申请日：2018-07-20

Applicant: ASM IP Holding B.V.

Inventor： Yuko KENGOYAMA ,  Takashi YOSHIDA

IPC: H01J37/02 ,  C23C16/56 ,  C23C16/509 ,  H01L21/687

Abstract: Examples of a substrate processing method include subjecting a substrate placed on a susceptor to plasma processing, applying power to an RF electrode facing the susceptor for only a predetermined static electricity removal time to generate plasma, thereby reducing an amount of charge of the substrate, measuring a self-bias voltage of the RF electrode while susceptor pins are made to protrude from a top surface of the susceptor and lift up the substrate, and by a controller, shortening the static electricity removal time when the self-bias voltage has a positive value, and lengthening the static electricity removal time when the self-bias voltage has a negative value.