公开(公告)号：US11237490B2

公开(公告)日：2022-02-01

申请号：US16084596

申请日：2017-01-26

申请人： ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

发明人： Bearrach Moest ,  Lowell Lane Baker ,  James Robert Downes ,  Wijnand Hoitinga ,  Hermen Folken Pen

IPC分类号： G03F7/20

摘要： An apparatus including an illumination system to condition a radiation beam, a support to support a patterning device, the patterning device capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, a projection system to project the patterned radiation beam onto a target portion of the substrate, and a control system configured to: receive pattern data characterizing a pattern distribution, receive radiation data characterizing the radiation beam, determine a dissipation distribution of the pattern based on the pattern data and the radiation data, determine deformation of the pattern by applying the dissipation distribution in a thermo-mechanical model of the patterning device, and determine a control signal to control a component of the apparatus based on the deformation of the pattern.

公开(公告)号：US10585359B2

公开(公告)日：2020-03-10

申请号：US16321059

申请日：2017-07-17

申请人： ASML Holding N.V. ,  ASML Netherlands B.V.

发明人： Ronald Peter Albright ,  Lowell Lane Baker ,  Daniel Nathan Burbank

IPC分类号： G03F7/20 ,  G03F1/24 ,  G03F1/64

摘要： Particle trap assemblies configured to reduce the possibility of contaminant particles with a large range of sizes, materials, travel speeds and angles of incidence reaching a particle-sensitive environment. The particle trap may be a gap geometric particle trap located between a stationary part and a movable part of the lithography apparatus. The particle trap may also be a surface geometric particle trap located on a surface of a particle sensitive environment in lithography or metrology apparatus.

公开(公告)号：US10394139B2

公开(公告)日：2019-08-27

申请号：US16090713

申请日：2017-03-08

申请人： ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

发明人： Güneş Nak{dot over (i)}bo{hacek over (g)}lu ,  Lowell Lane Baker ,  Ruud Hendrikus Martinus Johannes Bloks ,  Hakki Ergün Cekli ,  Geoffrey Alan Schultz ,  Laurentius Johannes Adrianus Van Bokhoven ,  Frank Johannes Jacobus Van Boxtel ,  Jean-Philippe Xavier Van Damme ,  Christopher Charles Ward

IPC分类号： G03F7/20

摘要： A patterning apparatus for a lithographic apparatus, the patterning apparatus including a patterning device support structure configured to support a patterning device having a planar surface; a patterning device conditioning system including a first gas outlet configured to provide a first gas flow over the planar surface in use and a second gas outlet configured to provide a second gas flow over the planar surface in use, wherein the first gas outlet and the second gas outlet are arranged at different distances perpendicular to the planar surface; and a control system configured to independently control a first momentum of gas exiting the first gas outlet and a second momentum of gas exiting the second gas outlet or to independently vary the first gas flow and/or the second gas flow over the planar surface of the patterning device.