公开(公告)号：US20140359543A1

公开(公告)日：2014-12-04

申请号：US14462187

申请日：2014-08-18

Applicant: ASML Netherlands B.V.

Inventor： Jun TAO ,  Been-Der Chen ,  Yen-Wen Lu ,  Jiangwei Li ,  Min-Chun Tsai ,  Dong Mao

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/70 ,  G03F7/70441

Abstract: Described herein is a method for obtaining a preferred layout for a lithographic process, the method comprising: identifying an initial layout including a plurality of features; and reconfiguring the features until a termination condition is satisfied, thereby obtaining the preferred layout; wherein the reconfiguring comprises evaluating a cost function that measures how a lithographic metric is affected by a set of changes to the features for a plurality of lithographic process conditions, and expanding the cost function into a series of terms at least some of which are functions of characteristics of the features.

Abstract translation: 这里描述了一种用于获得光刻工艺的优选布局的方法，该方法包括：识别包括多个特征的初始布局; 并重新配置特征直到满足终止条件，从而获得优选布局; 其中所述重新配置包括评估成本函数，所述成本函数测量光刻度量如何受到用于多个平版印刷工艺条件的所述特征的一组变化的影响，以及将所述成本函数扩展成一系列术语，其中至少一些是 特点的特点。

公开(公告)号：US09619607B2

公开(公告)日：2017-04-11

申请号：US14462187

申请日：2014-08-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun Tao ,  Been-Der Chen ,  Yen-Wen Lu ,  Jiangwei Li ,  Min-Chun Tsai ,  Dong Mao

IPC: G06F17/50 ,  G03F1/70 ,  G03F7/20

CPC classification number: G06F17/5081 ,  G03F1/70 ,  G03F7/70441

Abstract: Described herein is a method for obtaining a preferred layout for a lithographic process, the method comprising: identifying an initial layout including a plurality of features; and reconfiguring the features until a termination condition is satisfied, thereby obtaining the preferred layout; wherein the reconfiguring comprises evaluating a cost function that measures how a lithographic metric is affected by a set of changes to the features for a plurality of lithographic process conditions, and expanding the cost function into a series of terms at least some of which are functions of characteristics of the features.