公开(公告)号：US20220066327A1

公开(公告)日：2022-03-03

申请号：US17415101

申请日：2019-12-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Johannes Jacobus Matheus BASELMANS ,  Duan-Fu Stephen HSU ,  Willem Jan BOUMAN ,  Frank Jan TIMMERMANS ,  Marie-Claire VAN LARE

IPC: G03F7/20

Abstract: Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.

公开(公告)号：US20180210350A1

公开(公告)日：2018-07-26

申请号：US15320300

申请日：2015-06-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Gerben PIETERSE ,  Theodorus Wilhelmus POLET ,  Johannes Jacobus Matheus BASELMANS ,  Willem Jan BOUMAN ,  Theodorus Marinus MODDERMAN ,  Cornelius Maria ROPS ,  Bart SMEETS ,  Koen STEFFENS ,  Ronald VAN DER HAM

IPC: G03F7/20

CPC classification number: G03F7/70891 ,  G03F7/70316 ,  G03F7/70341

Abstract: An immersion lithographic apparatus including: a liquid confinement structure configured to supply and confine immersion liquid to an immersion space between a final lens element of a projection system and a surface of the substrate and/or of a substrate table; and a passageway-former between the projection system and the liquid confinement structure, and a passageway between the passageway-former and an optically active part of the final lens element, the passageway being in liquid communication via an opening with the immersion space and extending radially outwardly, with respect to an optical axis of the projection system, at least to an edge of an exposed bottom surface of the final lens element and being constructed and configured such that in use it is filled with liquid from the immersion space by capillary action.

公开(公告)号：US20180196354A1

公开(公告)日：2018-07-12

申请号：US15741763

申请日：2016-07-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Cornelius Maria ROPS ,  Willem Jan BOUMAN ,  Theodorus Wilhelmus POLET

IPC: G03F7/20 ,  H01L21/027 ,  G02B27/00

CPC classification number: G03F7/70341 ,  G02B27/0006 ,  G03F7/2041 ,  G03F7/70783 ,  G03F7/70808 ,  G03F7/70891 ,  G03F7/70958 ,  H01L21/0274

Abstract: A lithographic apparatus includes a projection system configured to project a patterned radiation beam through the projection system onto a target portion of a substrate. A liquid confinement structure confines an immersion liquid in a space between the projection system and the substrate. The projection system includes: an exit surface through which to project the patterned radiation beam; and a further surface facing the liquid confinement structure. The further surface has a first static receding contact angle with respect to the immersion liquid. The exit surface has a second static receding contact angle with respect to the immersion liquid. The first static receding contact angle is: greater than the second static receding contact angle; and less than 65 degrees.

公开(公告)号：US20240219843A1

公开(公告)日：2024-07-04

申请号：US18532977

申请日：2023-12-07

Applicant: ASML Netherlands B.V.

Inventor： Johannes Jacobus Matheus BASELMANS ,  Duan-Fu Stephen HSU ,  Willem Jan BOUMAN ,  Frank Jan TIMMERMANS ,  Marie-Claire VAN LARE

IPC: G03F7/00

CPC classification number: G03F7/70308

Abstract: Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.

公开(公告)号：US20170219939A1

公开(公告)日：2017-08-03

申请号：US15328376

申请日：2015-06-26

Applicant: ASML Netherlands B.V.

Inventor： Theodorus Wilhelmus POLET ,  Johannes Jacobus BASELMANS ,  Willem Jan BOUMAN ,  Han Henricus Aldegonda LEMPENS ,  Theodorus Marinus MODDERMAN ,  Cornelius Maria ROPS ,  Bart SMEETS ,  Koen STEFFENS ,  Ronald VAN DER HAM

IPC: G03F7/20

CPC classification number: G03F7/70866 ,  G03F7/70341 ,  G03F7/7095

Abstract: An immersion lithographic apparatus includes a projection system. The projection system is configured to project a patterned radiation beam through an immersion liquid onto a target portion of a substrate. An external surface of the projection system includes a first surface. The first surface has a non-planar shape. An element is attached to the first surface and positioned so that at least a portion of the element contacts the immersion liquid in use. The element includes a closed loop of continuously integral material in a preformed state and conforms to the non-planar shape of the first surface.