公开(公告)号：US20230076218A1

公开(公告)日：2023-03-09

申请号：US17799019

申请日：2021-02-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Koenraad VAN INGEN SCHENAU ,  Abraham SLACHTER ,  Vadim Yourievich TIMOSHKOV ,  Marleen KOOIMAN ,  Marie-Claire VAN LARE ,  Hermanus Adrianus DILLEN ,  Stefan HUNSCHE ,  Luis Alberto Colina Sant COLINA ,  Aiqin JIANG ,  Fuming WANG ,  Sudharshanan RAGHUNATHAN

IPC: G03F7/20

Abstract: Methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of a characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining a probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.

公开(公告)号：US20210397172A1

公开(公告)日：2021-12-23

申请号：US17296316

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham SLACHTER ,  Wim Tjibbo TEL ,  Daan Maurits SLOTBOOM ,  Vadim Yourievich TIMOSHKOV ,  Koen Wilhelmus Cornelis Adrianus VAN DER STRATEN ,  Boris MENCHTCHIKOV ,  Simon Philip Spencer HASTINGS ,  Cyrus Emil TABERY ,  Maxime Philippe Frederic GENIN ,  Youping ZHANG ,  Yi ZOU ,  Chenxi LIN ,  Yana CHENG

IPC: G05B19/418

Abstract: A method for analyzing a process, the method including obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.

公开(公告)号：US20230081821A1

公开(公告)日：2023-03-16

申请号：US17986829

申请日：2022-11-14

Applicant: ASML Netherlands B.V.

Inventor： Chrysostomos BATISTAKIS ,  Maxim PISARENCO ,  Bernardo Andres OYARZUN RIVERA ,  Abraham SLACHTER

IPC: G06T7/73 ,  G06V10/46 ,  G06T7/00 ,  H01L21/66

Abstract: Described herein is a method for training a machine learning model to determine a source of error contribution to multiple features of a pattern printed on a substrate. The method includes obtaining training data having multiple datasets, wherein each dataset has error contribution values representative of an error contribution from one of multiple sources to the features, and wherein each dataset is associated with an actual classification that identifies a source of the error contribution of the corresponding dataset; and training, based on the training data, a machine learning model to predict a classification of a reference dataset of the datasets such that a cost function that determines a difference between the predicted classification and the actual classification of the reference dataset is reduced.

公开(公告)号：US20210149312A1

公开(公告)日：2021-05-20

申请号：US16644206

申请日：2018-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Mark John MASLOW ,  Koenraad VAN INGEN SCHENAU ,  Patrick WARNAAR ,  Abraham SLACHTER ,  Roy ANUNCIADO ,  Simon Hendrik Celine VAN GORP ,  Frank STAALS ,  Marinus JOCHEMSEN

IPC: G03F7/20 ,  H01L21/66 ,  G06T7/00

Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.

公开(公告)号：US20210356874A1

公开(公告)日：2021-11-18

申请号：US17389842

申请日：2021-07-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham SLACHTER ,  Stefan HUNSCHE ,  Wim Tjibbo TEL ,  Anton Bernhard VAN OOSTEN ,  Koenraad VAN INGEN SCHENAU ,  Gijsbert RISPENS ,  Brennan PETERSON

IPC: G03F7/20

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

公开(公告)号：US20210018850A1

公开(公告)日：2021-01-21

申请号：US16955483

申请日：2018-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham SLACHTER ,  Stefan HUNSCHE ,  Wim Tjibbo TEL ,  Anton Bernhard VAN OOSTEN ,  Koenraad VAN INGEN SCHENAU ,  Gijsbert RISPENS ,  Brennan PETERSON

IPC: G03F7/20

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

公开(公告)号：US20240126181A1

公开(公告)日：2024-04-18

申请号：US18511454

申请日：2023-11-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham SLACHTER ,  Stefan HUNSCHE ,  Wim Tjibbo TEL ,  Anton Bernhard VAN OOSTEN ,  Koenraad VAN INGEN SCHENAU ,  Gijsbert RISPENS ,  Brennan PETERSON

IPC: G03F7/00

CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F7/70558 ,  G03F7/70625

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

公开(公告)号：US20240012337A1

公开(公告)日：2024-01-11

申请号：US18229984

申请日：2023-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Mark John MASLOW ,  Koenraad VAN INGEN SCHENAU ,  Patrick WARNAAR ,  Abraham SLACHTER ,  Roy ANUNCIADO ,  Simon Hendrik Celine VAN GORP ,  Frank STAALS ,  Marinus JOCHEMSEN

IPC: G03F7/00 ,  G06T7/00 ,  H01L21/66 ,  G06F30/20

CPC classification number: G03F7/70625 ,  G06T7/0004 ,  H01L22/20 ,  G06F30/20 ,  H01L21/00

Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.

公开(公告)号：US20220342316A1

公开(公告)日：2022-10-27

申请号：US17640792

申请日：2020-09-03

Applicant: ASML Netherlands B.V.

Inventor： Marleen KOOIMAN ,  Maxim PISARENCO ,  Abraham SLACHTER ,  Mark John MASLOW ,  Bernardo Andres OYARZUN RIVERA ,  Wim Tjibbo TEL ,  Ruben Cornelis MAAS

IPC: G03F7/20 ,  G06T7/00 ,  G06T7/33

Abstract: Described herein is a method of training a model configured to predict whether a feature associated with an imaged substrate will be defective after etching of the imaged substrate and determining etch conditions based on the trained model. The method includes obtaining, via a metrology tool, (i) an after development image of the imaged substrate at a given location, the after development image including a plurality of features, and (ii) an after etch image of the imaged substrate at the given location; and training, using the after development image and the after etch image, the model configured to determine defectiveness of a given feature of the plurality of features in the after development image. In an embodiment, the determining of defectiveness is based on comparing the given feature in the after development image with a corresponding etch feature in the after etch image.

公开(公告)号：US20200097633A1

公开(公告)日：2020-03-26

申请号：US16541420

申请日：2019-08-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Sunit Sondhi MAHAJAN ,  Abraham SLACHTER ,  Brennan PETERSON ,  Koen Wilhelmus Cornelis Adrianus VAN DER STRATEN ,  Antonio CORRADI ,  Pieter Joseph Marie WÖLTGENS

IPC: G06F17/50 ,  G03F7/20

Abstract: A method for controlling a processing apparatus used in a semiconductor manufacturing process to form a structure on a substrate, the method including: obtaining a relationship between a geometric parameter of the structure and a performance characteristic of a device including the structure; and determining a process setting for the processing apparatus associated with a location on the substrate, wherein the process setting is at least partially based on an expected value of the geometric parameter of the structure when using the processing setting, a desired performance characteristic of the device and an expected physical yield margin or defect yield margin associated with the location on the substrate.