公开(公告)号：US20240111218A1

公开(公告)日：2024-04-04

申请号：US18387082

申请日：2023-11-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Hermanus Adrianus DILLEN ,  Marc Jurian KEA ,  Mark John MASLOW ,  Koen THUIJS ,  Peter David ENGBLOM ,  Ralph Timotheus HUIJGEN ,  Daan Maurits SLOTBOOM ,  Johannes Catharinus Hubertus MULKENS

IPC: G03F7/00

CPC classification number: G03F7/705 ,  G03F7/70525 ,  G03F7/7065 ,  G03F7/70658

Abstract: A method of determining a characteristic of one or more processes for manufacturing features on a substrate, the method including: obtaining image data of a plurality of features on a least part of at least one region on a substrate; using the image data to obtain measured data of one or more dimensions of each of at least some of the plurality of features; determining a statistical parameter that is dependent on the variation of the measured data of one or more dimensions of each of at least some of the plurality of features; determining a probability of defective manufacture of features in dependence on a determined number of defective features in the image data; and determining the characteristic of the one or more processes to have the probability of defective manufacture of features and the statistical parameter.

公开(公告)号：US20240319123A1

公开(公告)日：2024-09-26

申请号：US18691828

申请日：2022-08-16

Applicant: ASML Netherlands B.V.

Inventor： Achim WOESSNER ,  Younghoon SONG ,  Pioter NIKOLSKI ,  Yun A SUNG ,  Antonio CORRADI ,  Hermanus Adrianus DILLEN

IPC: G01N23/2251

CPC classification number: G01N23/2251 ,  G01N2223/304 ,  G01N2223/306 ,  G01N2223/401 ,  G01N2223/418 ,  G01N2223/6116 ,  G01N2223/646

Abstract: Apparatuses, systems, and methods for providing beams for classifying and identifying failure mechanisms associated with a sample of charged particle beam systems. In some embodiments, a method may include analyzing a first plurality of voltage contrast images of a sample to identify a plurality of defects; and analyzing a pattern of a subset of the plurality of defects to determine a failure mechanism for the subset of the plurality of defects.

公开(公告)号：US20230076218A1

公开(公告)日：2023-03-09

申请号：US17799019

申请日：2021-02-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Koenraad VAN INGEN SCHENAU ,  Abraham SLACHTER ,  Vadim Yourievich TIMOSHKOV ,  Marleen KOOIMAN ,  Marie-Claire VAN LARE ,  Hermanus Adrianus DILLEN ,  Stefan HUNSCHE ,  Luis Alberto Colina Sant COLINA ,  Aiqin JIANG ,  Fuming WANG ,  Sudharshanan RAGHUNATHAN

IPC: G03F7/20

Abstract: Methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of a characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining a probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.

公开(公告)号：US20240346200A1

公开(公告)日：2024-10-17

申请号：US18683124

申请日：2022-08-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Vahid BASTANI ,  Yichen ZHANG ,  Marsil DE ATHAYDE COSTA E SILVA ,  Hermanus Adrianus DILLEN ,  Robert Jan VAN WIJK

IPC: G06F30/17 ,  G06F30/27

CPC classification number: G06F30/17 ,  G06F30/27

Abstract: A computer implemented method of determining a placement metric relating to placement of one or more features on a substrate in a lithographic process. The method includes obtaining setup data including placement error contributor data relating to a plurality of placement error contributor parameters and yield data representative of yield and defining a statistical model for predicting a yield metric, the statistical model being based on a placement metric, the placement metric being a function of the placement error contributor parameters, and associated model coefficients. The model coefficients are fitted based on the setup data, and the placement metric determined from the fitted model coefficients.

公开(公告)号：US20230245851A1

公开(公告)日：2023-08-03

申请号：US18126322

申请日：2023-03-24

Applicant: ASML Netherlands B.V.

Inventor： Hermanus Adrianus DILLEN ,  Wim Tjibbo TEL ,  Willem Louis VAN MIERLO

IPC: H01J37/28 ,  H01J37/22

CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J2237/2826

Abstract: A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.

公开(公告)号：US20230023153A1

公开(公告)日：2023-01-26

申请号：US17764245

申请日：2020-09-03

Applicant: ASML NETHERLANDS B.V

Inventor： Wim Tjibbo TEL ,  Hermanus Adrianus DILLEN ,  Koen THUIJS ,  Laurent Michel Marcel DEPRE ,  Christopher PRENTICE

IPC: G03F7/20

Abstract: A method of determining a field of view setting for an inspection tool having a configurable field of view, the method including: obtaining a process margin distribution of features on at least part of a substrate; obtaining a threshold value; identifying, in dependence on the obtained process margin distribution and the threshold value, one or more regions on at least part of the substrate; and determining the field of view setting in dependence on the identified one or more regions.

公开(公告)号：US20240297013A1

公开(公告)日：2024-09-05

申请号：US18661389

申请日：2024-05-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Jasper Frans Mathijs VAN RENS ,  Thomas Jarik HUISMAN ,  Willem Louis VAN MIERLO ,  Hermanus Adrianus DILLEN

IPC: H01J37/22 ,  H01J37/147 ,  H01J37/28

CPC classification number: H01J37/222 ,  H01J37/1477 ,  H01J37/28

Abstract: Disclosed herein is a non-transitory computer readable medium that has stored therein a computer program, wherein the computer program comprises code that, when executed by a computer system, instructs the computer system to perform a method of determining the charging induced distortion of a SEM image, the method comprising: determining, at each of a plurality of locations in a SEM image of at least part of a sample, a deflection of an illuminating charged particle beam caused by a charging of the sample at the location; and determining the charging induced distortion of the SEM image in dependence on the determined deflections at each of the plurality of locations in the SEM image.

公开(公告)号：US20230082858A1

公开(公告)日：2023-03-16

申请号：US17797506

申请日：2021-01-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Jochem Sebastiaan WILDENBERG ,  Hermanus Adrianus DILLEN ,  Fan FENG ,  Ronald VAN ITTERSUM ,  Willem Louis VAN MIERLO ,  Koen THUIJS

IPC: G03F7/20

Abstract: A method and associated apparatuses for controlling a process of manufacturing semiconductor devices on a substrate. The method includes obtaining process data relating to the process and determining a correction for the process based on the process data and a first control objective associated with the devices on the substrate. A first probability of the first control objective being achievable is determined and the correction adjusted based on the probability and at least a second control objective having a second probability of being achievable compared to the first control objective.

公开(公告)号：US20220107571A1

公开(公告)日：2022-04-07

申请号：US17467441

申请日：2021-09-06

Applicant: ASML Netherlands B.V.

Inventor： Thomas Jarik HUISMAN ,  Ruben Cornelis MAAS ,  Hermanus Adrianus DILLEN

IPC: G03F7/20 ,  G01B9/04 ,  G03F1/84 ,  G06T7/12 ,  G03F1/86

Abstract: Disclosed is a method of, and associated apparatus for, determining an edge position relating to an edge of a feature comprised within an image, such as a scanning electron microscope image, which comprises noise. The method comprises determining a reference signal from said image; and determining said edge position with respect to said reference signal. The reference signal may be determined from the image by applying a 1-dimensional low-pass filter to the image in a direction parallel to an initial contour estimating the edge position.

公开(公告)号：US20220100098A1

公开(公告)日：2022-03-31

申请号：US17425355

申请日：2020-02-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Hermanus Adrianus DILLEN ,  Marc Jurian KEA ,  Mark John MASLOW ,  Koen THUIJS ,  Peter David ENGBLOM ,  Ralph Timotheus HUIJGEN ,  Daan Maurits SLOTBOOM ,  Johannes Catharinus Hubertus MULKENS

IPC: G03F7/20

Abstract: A method of determining a characteristic of one or more processes for manufacturing features on a substrate, the method including: obtaining image data of a plurality of features on a least part of at least one region on a substrate; using the image data to obtain measured data of one or more dimensions of each of at least some of the plurality of features; determining a statistical parameter that is dependent on the variation of the measured data of one or more dimensions of each of at least some of the plurality of features; determining a probability of defective manufacture of features in dependence on a determined number of defective features in the image data; and determining the characteristic of the one or more processes to have the probability of defective manufacture of features and the statistical parameter.