公开(公告)号：US20210033978A1

公开(公告)日：2021-02-04

申请号：US16968211

申请日：2019-02-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Marleen KOOIMAN

IPC: G03F7/20 ,  G06F30/392

Abstract: A method, involving computing a first intensity of a first aerial image and a second intensity of a second aerial image, the first aerial image corresponding to a first location within a resist layer and the second aerial image corresponding to a second location within the resist layer. The method further involving performing, using a resist model, a computer simulation of the resist layer to obtain a value of a parameter for a resist layer feature based on a difference between the first and second intensities or on a difference between a resist model result for the first intensity and a resist model result for the second intensity.

公开(公告)号：US20200310254A1

公开(公告)日：2020-10-01

申请号：US16765595

申请日：2018-12-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Marleen KOOIMAN ,  Sander Frederik WUISTER

IPC: G03F7/20 ,  G01N21/956

Abstract: A method of predicting the dominant failure mode and/or the failure rate of a plurality of features formed on a substrate, and an associated inspection apparatus. The method may include determining a placement metric for each feature, the placement metric including a measure of whether the feature is in an expected position, and comparing a distribution of the placement metric to a reference (e.g., Gaussian) distribution. The placement metric may include a boundary metric for a plurality of boundary points on a boundary defining each feature, the boundary metric including a measure of whether a boundary point is in an expected position. The dominant failure mode and/or the failure rate of the plurality of features is predicted from the comparison.

公开(公告)号：US20240062356A1

公开(公告)日：2024-02-22

申请号：US18268924

申请日：2021-12-09

Applicant: ASML Netherlands B.V.

Inventor： Huina XU ,  Yana MATSUSHITA ,  Tanbir HASAN ,  Ren-Jay KOU ,  Namita Adrianus GOEL ,  Hongmei LI ,  Maxim PISARENCO ,  Marleen KOOIMAN ,  Chrysostomos BATISTAKIS ,  Johannes ONVLEE

IPC: G06T7/00

CPC classification number: G06T7/0004 ,  G06T2207/10061 ,  G06T2207/20021 ,  G06T2207/30148 ,  G06T2207/20081

Abstract: A method and apparatus for analyzing an input electron microscope image of a first area on a first wafer are disclosed. The method comprises obtaining a plurality of mode images from the input electron microscope image corresponding to a plurality of interpretable modes. The method further comprises evaluating the plurality of mode images, and determining, based on evaluation results, contributions from the plurality of interpretable modes to the input electron microscope image. The method also comprises predicting one or more characteristics in the first area on the first wafer based on the determined contributions. In some embodiments, a method and apparatus for performing an automatic root cause analysis based on an input electron microscope image of a wafer are also disclosed.

公开(公告)号：US20220342316A1

公开(公告)日：2022-10-27

申请号：US17640792

申请日：2020-09-03

Applicant: ASML Netherlands B.V.

Inventor： Marleen KOOIMAN ,  Maxim PISARENCO ,  Abraham SLACHTER ,  Mark John MASLOW ,  Bernardo Andres OYARZUN RIVERA ,  Wim Tjibbo TEL ,  Ruben Cornelis MAAS

IPC: G03F7/20 ,  G06T7/00 ,  G06T7/33

Abstract: Described herein is a method of training a model configured to predict whether a feature associated with an imaged substrate will be defective after etching of the imaged substrate and determining etch conditions based on the trained model. The method includes obtaining, via a metrology tool, (i) an after development image of the imaged substrate at a given location, the after development image including a plurality of features, and (ii) an after etch image of the imaged substrate at the given location; and training, using the after development image and the after etch image, the model configured to determine defectiveness of a given feature of the plurality of features in the after development image. In an embodiment, the determining of defectiveness is based on comparing the given feature in the after development image with a corresponding etch feature in the after etch image.

公开(公告)号：US20200348598A1

公开(公告)日：2020-11-05

申请号：US16771343

申请日：2018-12-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Marleen KOOIMAN ,  David Marie RIO ,  Sander Frederik WUISTER

IPC: G03F7/20 ,  G06F30/13

Abstract: A method for calibrating a resist model. The method includes: generating a modeled resist contour of a resist structure based on a simulated aerial image of the resist structure and parameters of the resist model, and predicting a metrology contour of the resist structure from the modeled resist contour based on information of an actual resist structure obtained by a metrology device. The method includes adjusting one or more of the parameters of the resist model based on a comparison of the predicted metrology contour and an actual metrology contour of the actual resist structure obtained by the metrology device.

公开(公告)号：US20240257367A1

公开(公告)日：2024-08-01

申请号：US18630741

申请日：2024-04-09

Applicant: ASML Netherlands B.V.

Inventor： Marleen KOOIMAN ,  Joost VAN BREE

IPC: G06T7/33 ,  G06T7/00 ,  G06T7/13 ,  G06T7/32

CPC classification number: G06T7/337 ,  G06T7/001 ,  G06T7/13 ,  G06T7/32 ,  G06T2207/10061 ,  G06T2207/20056 ,  G06T2207/30148

Abstract: A method of determining offsets between a plurality of data sets, each data set representing a sampling area of a pattern formed on a sample, wherein each sampling area derives from a predetermined portion of a mask pattern, the method comprising: detecting a fingerprint of the mask pattern in noise of the data sets; and determining offsets based on the fingerprint of the mask pattern.

公开(公告)号：US20230076218A1

公开(公告)日：2023-03-09

申请号：US17799019

申请日：2021-02-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Koenraad VAN INGEN SCHENAU ,  Abraham SLACHTER ,  Vadim Yourievich TIMOSHKOV ,  Marleen KOOIMAN ,  Marie-Claire VAN LARE ,  Hermanus Adrianus DILLEN ,  Stefan HUNSCHE ,  Luis Alberto Colina Sant COLINA ,  Aiqin JIANG ,  Fuming WANG ,  Sudharshanan RAGHUNATHAN

IPC: G03F7/20

Abstract: Methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of a characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining a probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.

公开(公告)号：US20220382163A1

公开(公告)日：2022-12-01

申请号：US17885491

申请日：2022-08-10

Applicant: ASML Netherlands B.V.

Inventor： Marleen KOOIMAN

IPC: G03F7/20 ,  G06T7/00 ,  G06V10/44 ,  G06V10/22

Abstract: An image analysis method for identifying features in an image of a part of an array of features formed by a multi-step process, the method comprising: analyzing variations in features visible in the image; and associating features of the image with steps of the multi-step process based at least in part on results of the analyzing.

公开(公告)号：US20200173940A1

公开(公告)日：2020-06-04

申请号：US16690633

申请日：2019-11-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Marleen KOOIMAN

IPC: G01N23/2251 ,  H01J37/26 ,  H01J37/285

Abstract: A method of reducing variability of an error associated with a structure on a substrate in a lithography process is disclosed. The method includes determining, based on one or more images obtained based on a scan of the substrate by a scanning electron microscope (SEM), a first error due to a SEM distortion in the image. The method also includes determining, based on the image, a second error associated with a real error of the structure, where the error associated with the structure includes the first error and the second error. A command is generated by a data processor that enables a modification of the lithography process and an associated reduction of the variability of the error based on reducing any of the first error or the second error.