公开(公告)号：US11982946B2

公开(公告)日：2024-05-14

申请号：US17628668

申请日：2020-07-06

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Nikhil Mehta ,  Maurits Van Der Schaar ,  Markus Gerardus Martinus Maria Van Kraaij ,  Hugo Augustinus Joseph Cramer ,  Olger Victor Zwier ,  Jeroen Cottaar ,  Patrick Warnaar

IPC: G03F7/20 ,  G01N21/956 ,  G03F1/84 ,  G03F7/00

CPC classification number: G03F7/70625 ,  G01N21/956 ,  G03F1/84 ,  G03F7/70633

Abstract: A patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device includes target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The patterning device includes product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that the at least one target has at least one boundary which is neither parallel nor perpendicular with respect to the product structures on the substrate.

公开(公告)号：US11940739B2

公开(公告)日：2024-03-26

申请号：US17562446

申请日：2021-12-27

Applicant: ASML Netherlands B.V.

Inventor： Nitesh Pandey ,  Arie Jeffrey Den Boef ,  Duygu Akbulut ,  Marinus Johannes Maria Van Dam ,  Hans Butler ,  Hugo Augustinus Joseph Cramer ,  Engelbertus Antonius Fransiscus Van Der Pasch ,  Ferry Zijp ,  Jeroen Arnoldus Leonardus Johannes Raaymakers ,  Marinus Petrus Reijnders

IPC: G03F7/20 ,  G01N21/956 ,  G03F7/00

CPC classification number: G03F7/70625 ,  G01N21/956 ,  G03F7/7015 ,  G03F7/70633

Abstract: A metrology tool for determining a parameter of interest of a structure fabricated on a substrate, the metrology tool comprising: an illumination optical system for illuminating the structure with illumination radiation under a non-zero angle of incidence; a detection optical system comprising a detection optical sensor and at least one lens for capturing a portion of illumination radiation scattered by the structure and transmitting the captured radiation towards the detection optical sensor, wherein the illumination optical system and the detection optical system do not share an optical element.

公开(公告)号：US11710668B2

公开(公告)日：2023-07-25

申请号：US17072391

申请日：2020-10-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Adriaan Johan Van Leest ,  Anagnostis Tsiatmas ,  Paul Christiaan Hinnen ,  Elliott Gerard McNamara ,  Alok Verma ,  Thomas Theeuwes ,  Hugo Augustinus Joseph Cramer ,  Maria Isabel De La Fuente Valentin ,  Koen Van Witteveen ,  Martijn Maria Zaal ,  Shu-jin Wang

IPC: H01L21/66 ,  G03F7/20 ,  G03F9/00 ,  G01N21/95 ,  G03F7/00

CPC classification number: H01L22/12 ,  G01N21/9501 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7003

Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.

公开(公告)号：US11385551B2

公开(公告)日：2022-07-12

申请号：US16330417

申请日：2017-08-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Bert Verstraeten ,  Hugo Augustinus Joseph Cramer ,  Thomas Theeuwes

IPC: G03F7/20

Abstract: A method of evaluating a patterning process, the method including: obtaining the result of a first measurement of a first metrology target; obtaining the result of a second measurement of a second metrology target, the second metrology target having a structural difference from the first metrology target that generates a sensitivity difference and/or an offset, of a process parameter of the patterning process between the first and second metrology targets; and determining a value pertaining to the patterning process based on the results of the first and second measurements.

公开(公告)号：US11092900B2

公开(公告)日：2021-08-17

申请号：US16675674

申请日：2019-11-06

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Youping Zhang ,  Hendrik Jan Hidde Smilde ,  Anagnostis Tsiatmas ,  Adriaan Johan Van Leest ,  Alok Verma ,  Thomas Theeuwes ,  Hugo Augustinus Joseph Cramer ,  Paul Christiaan Hinnen

IPC: G01N21/95 ,  G03F7/20 ,  G01N21/47

Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.

公开(公告)号：US10901323B2

公开(公告)日：2021-01-26

申请号：US16903893

申请日：2020-06-17

Applicant: ASML Netherlands B.V.

Inventor： Hugo Augustinus Joseph Cramer ,  Seyed Iman Mossavat ,  Paul Christiaan Hinnen

IPC: G03F7/20 ,  G02B21/10 ,  G02B21/36 ,  G01N21/27

Abstract: Disclosed is method of optimizing bandwidth of measurement illumination for a measurement application, and an associated metrology apparatus. The method comprises performing a reference measurement with reference measurement illumination having a reference bandwidth and performing one or more optimization measurements, each of said one or more optimization measurements being performed with measurement illumination having a varied candidate bandwidth. The one or more optimization measurements are compared with the reference measurement; and an optimal bandwidth for the measurement application is selected based on the comparison.

公开(公告)号：US10546790B2

公开(公告)日：2020-01-28

申请号：US15445478

申请日：2017-02-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Adriaan Johan Van Leest ,  Anagnostis Tsiatmas ,  Paul Christiaan Hinnen ,  Elliott Gerard McNamara ,  Alok Verma ,  Thomas Theeuwes ,  Hugo Augustinus Joseph Cramer

IPC: G06F17/50 ,  H01L21/66 ,  G03F9/00 ,  G01N21/95

Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.

公开(公告)号：US10156797B2

公开(公告)日：2018-12-18

申请号：US15114368

申请日：2015-01-22

Applicant: ASML Netherlands B.V.

Inventor： Seyed Iman Mossavat ,  Hugo Augustinus Joseph Cramer ,  Maurits Van Der Schaar

IPC: G03F7/20 ,  G01B11/27

Abstract: A method of determining edge placement error within a structure produced using a lithographic process, the method including: receiving a substrate having a first structure produced using the lithographic process, the first structure having first and second layers, each of the layers having first areas of electrically conducting material and second areas of non-electrically conducting material; receiving a target signal indicative of a first target relative position which is indicative of target position of edges between the first areas and the second areas of the first layer relative to edges between the first areas and second areas of the second layer in the first structure during the lithographic process; detecting scattered radiation while illuminating the first structure with optical radiation to obtain a first signal; and ascertaining an edge placement error parameter on the basis of first signal and the first target relative position.

公开(公告)号：US09436099B2

公开(公告)日：2016-09-06

申请号：US14273707

申请日：2014-05-09

Applicant: ASML Netherlands B.V.

Inventor： Christian Marinus Leewis ,  Hugo Augustinus Joseph Cramer ,  Marcus Adrianus Van De Kerkhof ,  Johannes Anna Quaedackers ,  Christine Corinne Mattheus

IPC: G03B27/32 ,  G03B27/52 ,  G03C5/00 ,  G03F7/00 ,  G03F7/20 ,  G03F1/38

CPC classification number: G03F7/70641 ,  G03F1/38 ,  G03F7/706 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70675 ,  G03F7/70683

Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

Abstract translation: 为了确定曝光装置是否正在输出正确剂量的辐射，并且其投影系统正确地对准辐射，在掩模上使用测试图案将特定标记物印刷到基底上。 然后通过诸如散射仪的检查装置测量该标记，以确定焦点和剂量以及其它相关性质是否存在错误。 测试图案被配置为使得可以通过测量使用掩模曝光的图案的特性容易地确定聚焦和剂量的变化。 测试图案可以是二维图案，其中物理或几何性质（例如间距）在两个维度的每一个中是不同的。 测试图案也可以是由一维结构阵列组成的一维图案，该结构由至少一个子结构组成，该子结构与焦点和剂量不同地反应并产生暴露图案， 可以确定焦点和剂量。

公开(公告)号：US20150177166A1

公开(公告)日：2015-06-25

申请号：US14416484

申请日：2013-06-18

Applicant: ASML Netherlands B.V.

Inventor： Hugo Augustinus Joseph Cramer ,  Robert John Socha ,  Patricius Aloysius Jacobus Tinnemans ,  Jean-Pierre Agnes Henricus Marie Vaessen

IPC: G01N23/203 ,  G03F7/20 ,  H01J37/26

CPC classification number: G01N23/203 ,  G03F7/70058 ,  G03F7/70625 ,  H01J37/26

Abstract: An inspection method determines values of profile parameters of substrate patterns. A baseline substrate with a baseline pattern target (BP) is produced that has a profile described by profile parameters, for example CD (median critical dimension), SWA (side wall angle) and RH (resist height). Scatterometry is used to obtain first and second signals from first and second targets. Values of differential pattern profile parameters are calculated using a Bayesian differential cost function based on a difference between the baseline pupil and the perturbed pupil and dependence of the pupil on pattern profile parameters. For example, the difference is measured between a baseline process and a perturbed process for stability control of a lithographic process. Fed-forward differential stack parameters are also calculated from observations of stack targets on the same substrates as the pattern targets.

Abstract translation: 检查方法确定基板图案的轮廓参数的值。 产生具有基线图案目标（BP）的基准基底，其具有通过轮廓参数描述的轮廓，例如CD（中值临界尺寸），SWA（侧壁角）和RH（抗蚀剂高度）。 散射法用于获得第一和第二个目标的第一和第二信号。 使用贝叶斯差分成本函数，基于基线瞳孔和扰动瞳孔之间的差异以及瞳孔对图形轮廓参数的依赖性来计算微分图案轮廓参数的值。 例如，在光刻工艺的稳定性控制的基线工艺和扰动工艺之间测量差异。 前馈差分堆栈参数也是通过与模式目标相同的基板上的堆叠目标的观察来计算的。