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公开(公告)号：US11774869B2
公开(公告)日：2023-10-03
申请号：US17599302
申请日：2020-01-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Ruud Hendrikus Martinus Johannes Bloks , Hendrik Cornelis Anton Borger , Frederik Eduard De Jong , Johan Gertrudis Cornelis Kunnen , Siebe Landheer , Chung-Hsun Li , Patricius Jacobus Neefs , Georgios Tsirogiannis , Si-Han Zeng
CPC classification number: G03F7/70875 , G03F7/7085 , G03F7/70633
Abstract: A method of determining an overlay value of a substrate, the method including: obtaining temperature data that includes data on measured temperature at one or more positions on a substrate table after a substrate has been loaded onto the substrate table; and determining an overlay value of the substrate in dependence on the obtained temperature data. There is further disclosed a method of determining a performance of a clamping by a substrate table using a determined overlay value.
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Patent Agency Ranking
公开(公告)号：US10261427B2
公开(公告)日：2019-04-16
申请号：US15869661
申请日：2018-01-12
Applicant: ASML Netherlands B.V.
Inventor： Si-Han Zeng , Yue-Lin Peng , Jen-Yu Fang , Arie Jeffrey Den Boef , Alexander Straaijer , Ching-Yi Hung , Patrick Warnaar
Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.
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公开(公告)号：US10474043B2
公开(公告)日：2019-11-12
申请号：US15841811
申请日：2017-12-14
Applicant: ASML Netherlands B.V.
Inventor： Patrick Warnaar , Maurits Van Der Schaar , Grzegorz Grzela , Erik Johan Koop , Victor Emanuel Calado , Si-Han Zeng
Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising: measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured Wt times, where Wt is an integer greater than 2 so as to obtain N*Wt measurement values; and determining R property values using Q equations and the N*Wt measurement values, where R
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公开(公告)号：US09869940B2
公开(公告)日：2018-01-16
申请号：US15133866
申请日：2016-04-20
Applicant: ASML Netherlands B.V.
Inventor： Si-Han Zeng , Yue-Lin Peng , Jen-Yu Fang , Arie Jeffrey Den Boef , Alexander Straaijer , Ching-Yi Hung , Patrick Warnaar
CPC classification number: G03F7/70633 , G01B11/24 , G01B11/272
Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.
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公开(公告)号：US11796978B2
公开(公告)日：2023-10-24
申请号：US17292586
申请日：2019-10-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Chang-Wei Chen , Si-Han Zeng
IPC: G05B19/042
CPC classification number: G05B19/0426 , G05B2219/23291 , G05B2219/2602
Abstract: A user interface for designing, configuring and/or editing a control flow representing a control strategy associated with a semiconductor manufacturing process, the user interface including: a library of control elements having at least a control element representing a task of simulation and each control element being selectable by a user; a control flow editor configured to organize the control elements into a control flow representing the control strategy; and a communication interface for communicating the control flow to a calculation engine configured to evaluate the control flow.
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6.发明申请公开(公告)号：US20180173105A1
公开(公告)日：2018-06-21
申请号：US15841811
申请日：2017-12-14
Applicant: ASML Netherlands B.V.
Inventor： Patrick Warnaar , Maurits Van Der Schaar , Grzegorz Grzela , Erik Johan Koop , Victor Emanuel Calado , Si-Han Zeng
Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising: measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured Wt times, where Wt is an integer greater than 2 so as to obtain N*Wt measurement values; and determining R property values using Q equations and the N*Wt measurement values, where R
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