公开(公告)号：US20180031981A1

公开(公告)日：2018-02-01

申请号：US15546592

申请日：2016-01-20

Applicant: ASML Netherlands B.V.

Inventor： Venugopal VELLANKI ,  Vivek Kumar JAIN ,  Stefan HUNSCHE

IPC: G03F7/20 ,  G03F1/84 ,  G06N99/00 ,  G03F1/60

CPC classification number: G03F7/7065 ,  G03F1/60 ,  G03F1/84 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70641 ,  G03F7/70666 ,  G06F17/5009 ,  G06F17/5081 ,  G06F2217/12 ,  G06N20/00

Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.

公开(公告)号：US20210325786A1

公开(公告)日：2021-10-21

申请号：US17272505

申请日：2019-09-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Venugopal VELLANKI ,  Mark Christopher SIMMONS

IPC: G03F7/20

Abstract: A method of determining candidate patterns from a set of patterns of a patterning process. The method includes obtaining (i) a set of patterns of a patterning process, (ii) a search pattern having a first feature and a second feature, and (iii) a search condition comprising a relative position between the first feature and the second feature of the search pattern; and determining a set of candidate patterns from the set of patterns that satisfies the search condition associated with the first feature and the second feature of the search pattern.

公开(公告)号：US20210255548A1

公开(公告)日：2021-08-19

申请号：US17313135

申请日：2021-05-06

Applicant: ASML Netherlands B.V.

Inventor： Venugopal VELLANKI ,  Vivek Kumar JAIN ,  Stefan HUNSCHE

IPC: G03F7/20 ,  G06N20/00 ,  G06F30/398 ,  G03F1/60 ,  G03F1/84

Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.

公开(公告)号：US20200096871A1

公开(公告)日：2020-03-26

申请号：US16696263

申请日：2019-11-26

Applicant: ASML Netherlands B.V.

Inventor： Venugopal VELLANKI ,  Vivek Kumar JAIN ,  Stefan HUNSCHE

IPC: G03F7/20 ,  G06N20/00 ,  G03F1/60 ,  G03F1/84

Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including; determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.