公开(公告)号：US20170052454A1

公开(公告)日：2017-02-23

申请号：US15240781

申请日：2016-08-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Martin Jacobus Johan JAK ,  Hendrik Jan Hidde SMILDE ,  Te-Chih HUANG ,  Victor Emanuel CALADO ,  Henricus Wilhelmus Maria VAN BUEL ,  Richard Johannes Franciscus VAN HAREN

IPC: G03F7/20

CPC classification number: G03F7/7065 ,  G03F7/70633 ,  G03F7/70683

Abstract: A substrate has a plurality of overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values, each of the overall asymmetry measurements being weighted by a corresponding weight factor. Each one of the weight factors represents a measure of feature asymmetry within the respective overlay grating. The calculation is used to improve subsequent performance of the measurement process, and/or the lithographic process. Some of the asymmetry measurements may additionally be weighted by a second weight factor in order to eliminate or reduce the contribution of phase asymmetry to the overlay.

Abstract translation: 衬底具有通过光刻工艺在其上形成的多个覆盖光栅。 每个覆盖光栅具有已知的叠加偏置。 叠加偏置的值包括例如在以P为中心的区域中的零点和两个值的区域中的两个值，其中P是光栅的间距。 使用不同覆盖偏差值的知识，对光栅的不对称测量计算叠加，每个整体不对称测量由相应的权重因子加权。 每个权重因子表示相应覆盖光栅内的特征不对称的度量。 该计算用于提高测量过程和/或光刻过程的后续性能。 另外可以通过第二加权因子来加权一些不对称测量值，以消除或减少相位不对称对叠加层的贡献。

公开(公告)号：US20190201943A1

公开(公告)日：2019-07-04

申请号：US16234190

申请日：2018-12-27

Applicant: ASML Netherlands B.V.

Inventor： Tim Peter Johan Gerard MAAS ,  Bartolomeus Martinus Johannes VAN HOUT ,  Henricus Wilhelmus Maria VAN BUEL ,  Floris ZOETHOUT

IPC: B08B6/00 ,  G03F7/20

CPC classification number: B08B6/00 ,  G03F7/7065 ,  G03F7/7085 ,  G03F7/70916 ,  G03F7/70925

Abstract: An apparatus (300) for removing contaminant particles (205) from a component (202, 204) of an apparatus (140, MT), the contaminant particles giving rise to an ambient electric field (E), the apparatus comprising: a collection region (301) for attracting the particles, wherein the ambient electric field is at least between the component and the collection region; and an electric field generator configured to establish an applied electric field between the collection region and the component to cause the particles to be transported from the component to the collection region, wherein the electric field generator is configured to determine the polarity of the applied electric field based on the ambient electric field.

公开(公告)号：US20220057192A1

公开(公告)日：2022-02-24

申请号：US17519641

申请日：2021-11-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve BHATTACHARYYA ,  Henricus Wilhelmus Maria VAN BUEL ,  Christophe David FOUQUET ,  Hendrik Jan Hidde SMILDE ,  Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF ,  Richard Johannes Franciscus VAN HAREN ,  Xing Lan LIU ,  Johannes Marcus Maria BELTMAN ,  Andreas FUCHS ,  Omer Abubaker Omer ADAM ,  Michael KUBIS ,  Martin Jacobus Johan JAK

IPC: G01B11/14 ,  G03F7/20

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

公开(公告)号：US20170176871A1

公开(公告)日：2017-06-22

申请号：US15118440

申请日：2015-01-29

Applicant: ASML Netherlands B.V.

Inventor： Henricus Wilhelmus Maria VAN BUEL ,  Johannes Marcus Maria BELTMAN ,  Xing Lan LIU ,  Hendrik Jan Hidde SMILDE ,  Richard Johannes Franciscus VAN HAREN

IPC: G03F7/20 ,  G01N21/956 ,  G01N21/93

CPC classification number: G03F7/70683 ,  G01N21/93 ,  G01N21/956 ,  G03F7/70633

Abstract: A method of devising a target arrangement, and associated target and reticle. The target includes a plurality of gratings, each grating having a plurality of substructures. The method includes: defining a target area; locating the substructures within the target area so as to form the gratings; and locating assist features at the periphery of the gratings, the assist features being configured to reduce measured intensity peaks at the periphery of the gratings. The method may include an optimization process including modelling a resultant image obtained by inspection of the target using a metrology process; and evaluating whether the target arrangement is optimized for detection using a metrology process.