公开(公告)号：US11061336B2

公开(公告)日：2021-07-13

申请号：US16493835

申请日：2018-03-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Hubertus Johannes Gertrudus Simons ,  Everhardus Cornelis Mos ,  Xiuhong Wei ,  Reza Mahmoodi Baram ,  Hadi Yagubizade ,  Yichen Zhang

IPC: G03B27/68 ,  G03F7/20

Abstract: A device manufacturing method includes: exposing a first substrate using a lithographic apparatus to form a patterned layer having first features; processing the first substrate to transfer the first features into the first substrate; determining displacements of the first features from their nominal positions in the first substrate; determining a correction to at least partly compensate for the displacements; and exposing a second substrate using a lithographic apparatus to form a patterned layer having the first features, wherein the correction is applied for or during the exposing the second substrate.

公开(公告)号：US09291916B2

公开(公告)日：2016-03-22

申请号：US14613687

申请日：2015-02-04

Applicant: ASML Netherlands B.V.

Inventor： Stefan Cornelis Theodorus Van Der Sanden ,  Richard Johannes Franciscus Van Haren ,  Hubertus Johannes Gertrudus Simons ,  Remi Daniel Marie Edart ,  Xiuhong Wei ,  Irina Lyulina ,  Michael Kubis

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70616 ,  G03F7/70141 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7088

Abstract: A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.

公开(公告)号：US11669017B2

公开(公告)日：2023-06-06

申请号：US16762982

申请日：2018-11-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy Werkman ,  Bijoy Rajasekharan ,  Lydia Marianna Vergaij-Huizer ,  Jochem Sebastiaan Wildenberg ,  Ronald Van Ittersum ,  Pieter Gerardus Jacobus Smorenberg ,  Robertus Wilhelmus Van Der Heijden ,  Xiuhong Wei ,  Hadi Yagubizade

IPC: G03F7/20

CPC classification number: G03F7/70458 ,  G03F7/70616

Abstract: A method for determining a plurality of corrections for control of at least one manufacturing apparatus used in a manufacturing process for providing product structures to a substrate in a plurality of layers, the method including: determining the plurality of corrections including a correction for each layer, based on an actuation potential of the applicable manufacturing apparatus used in the formation of each layer, wherein the determining includes determining corrections for each layer simultaneously in terms of a matching parameter.