公开(公告)号：US12032299B2

公开(公告)日：2024-07-09

申请号：US17784566

申请日：2020-12-03

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Patricius Aloysius Jacobus Tinnemans ,  Igor Matheus Petronella Aarts ,  Kaustuve Bhattacharyya ,  Ralph Brinkhof ,  Leendert Jan Karssemeijer ,  Stefan Carolus Jacobus Antonius Keij ,  Haico Victor Kok ,  Simon Gijsbert Josephus Mathijssen ,  Henricus Johannes Lambertus Megens ,  Samee Ur Rehman

IPC: G03F7/00 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F7/706837 ,  G03F9/7034 ,  G03F9/7092

Abstract: A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.

公开(公告)号：US11105619B2

公开(公告)日：2021-08-31

申请号：US16629990

申请日：2018-07-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Franciscus Godefridus Casper Bijnen ,  Junichi Kanehara ,  Stefan Carolus Jacobus Antonius Keij ,  Thomas Augustus Mattaar ,  Petrus Franciscus Van Gils

IPC: G01B11/27

Abstract: In order to improve the throughput performance and/or economy of a measurement apparatus, the present disclosure provides a metrology apparatus including: a first measuring apparatus; a second measuring apparatus; a first substrate stage configured to hold a first substrate and/or a second substrate; a second substrate stage configured to hold the first substrate and/or the second substrate; a first substrate handler configured to handle the first substrate and/or the second substrate; and a second substrate handler configured to handle the first substrate and/or the second substrate, wherein the first substrate is loaded from a first, second or third FOUP, wherein the second substrate is loaded from the first, second or third FOUP, wherein the first measuring apparatus is an alignment measuring apparatus, and wherein the second measuring apparatus is a level sensor, a film thickness measuring apparatus or a spectral reflectance measuring apparatus.

公开(公告)号：US11874103B2

公开(公告)日：2024-01-16

申请号：US17412525

申请日：2021-08-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Franciscus Godefridus Casper Bijnen ,  Junichi Kanehara ,  Stefan Carolus Jacobus Antonius Keij ,  Thomas Augustus Mattaar ,  Petrus Franciscus Van Gils

IPC: G01B11/27

CPC classification number: G01B11/272

Abstract: In order to improve the throughput performance and/or economy of a measurement apparatus, the present disclosure provides a metrology apparatus including: a first measuring apparatus; a second measuring apparatus; a first substrate stage configured to hold a first substrate and/or a second substrate; a second substrate stage configured to hold the first substrate and/or the second substrate; a first substrate handler configured to handle the first substrate and/or the second substrate; and a second substrate handler configured to handle the first substrate and/or the second substrate, wherein the first substrate is loaded from a first, second or third FOUP, wherein the second substrate is loaded from the first, second or third FOUP, wherein the first measuring apparatus is an alignment measuring apparatus, and wherein the second measuring apparatus is a level sensor, a film thickness measuring apparatus or a spectral reflectance measuring apparatus.

公开(公告)号：US10705438B2

公开(公告)日：2020-07-07

申请号：US16716568

申请日：2019-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Andre Bernardus Jeunink ,  Laurentius Johannes Adrianus Van Bokhoven ,  Stan Henricus Van Der Meulen ,  Yang-Shan Huang ,  Federico La Torre ,  Bearrach Moest ,  Stefan Carolus Jacobus Antonius Keij ,  Enno Van Den Brink ,  Christine Henriette Schouten ,  Hoite Pieter Theodoor Tolsma

IPC: G03F7/20 ,  G03F1/64 ,  G03F1/62

Abstract: A lithographic apparatus comprising a support structure constructed to support a patterning device and associated pellicle, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, and a projection system configured to project the patterned radiation beam onto a target portion of a substrate, wherein the support structure is located in a housing and wherein pressure sensors are located in the housing.

公开(公告)号：US20200117097A1

公开(公告)日：2020-04-16

申请号：US16716568

申请日：2019-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Andre Bernardus JEUNINK ,  Laurentius Johannes Adrianus Van Bokhoven ,  Stan Henricus Van Der Meulen ,  Yang-Shan Huang ,  Federico La Torre ,  Bearrach Moest ,  Stefan Carolus Jacobus Antonius Keij ,  Enno Van Den Brink ,  Christine Henriette Schouten ,  Hoite Pieter Theodoor Tolsma

IPC: G03F7/20 ,  G03F1/64 ,  G03F1/62

Abstract: A lithographic apparatus comprising a support structure constructed to support a patterning device and associated pellicle, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, and a projection system configured to project the patterned radiation beam onto a target portion of a substrate, wherein the support structure is located in a housing and wherein pressure sensors are located in the housing.

公开(公告)号：US10571814B2

公开(公告)日：2020-02-25

申请号：US16318191

申请日：2017-06-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Andre Bernardus Jeunink ,  Laurentius Johannes Adrianus Van Bokhoven ,  Stan Henricus Van Der Meulen ,  Yang-Shan Huang ,  Federico La Torre ,  Bearrach Moest ,  Stefan Carolus Jacobus Antonius Keij ,  Enno Van Den Brink ,  Christine Henriette Schouten ,  Hoite Pieter Theodoor Tolsma

IPC: G03F7/20 ,  G03F1/62 ,  G03F1/64

Abstract: A lithographic apparatus has a support structure constructed to support a patterning device and associated pellicle, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, and a projection system configured to project the patterned radiation beam onto a target portion of a substrate, wherein the support structure is located in a housing and wherein pressure sensors are located in the housing.