公开(公告)号：US12032299B2

公开(公告)日：2024-07-09

申请号：US17784566

申请日：2020-12-03

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Patricius Aloysius Jacobus Tinnemans ,  Igor Matheus Petronella Aarts ,  Kaustuve Bhattacharyya ,  Ralph Brinkhof ,  Leendert Jan Karssemeijer ,  Stefan Carolus Jacobus Antonius Keij ,  Haico Victor Kok ,  Simon Gijsbert Josephus Mathijssen ,  Henricus Johannes Lambertus Megens ,  Samee Ur Rehman

IPC: G03F7/00 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F7/706837 ,  G03F9/7034 ,  G03F9/7092

Abstract: A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.

公开(公告)号：US12032297B2

公开(公告)日：2024-07-09

申请号：US17291513

申请日：2019-10-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Emil Peter Schmitt-Weaver ,  Kaustuve Bhattacharyya ,  Martin Kers

IPC: G03F7/20 ,  G03F7/00 ,  G05B13/04

CPC classification number: G03F7/705 ,  G05B13/042

Abstract: A method of determining a parameter of a lithographic apparatus, wherein the method includes providing first height variation data of a first substrate, providing first performance data of a first substrate, and determining a model based on the first height variation data and the first performance data. The method further includes obtaining second height variation data of a second substrate, inputting the second height variation data to the model, and determining second performance data of the second substrate by running the model. Based on the second performance data, the method determines a parameter of the apparatus.

公开(公告)号：US20230185990A1

公开(公告)日：2023-06-15

申请号：US18095515

申请日：2023-01-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Lotte Marloes Willems ,  Kaustuve Bhattacharyya ,  Panagiotis Pieter Bintevinos ,  Guangqing Chen ,  Martin Ebert ,  Pieter Jacob Mathias Hendrik Knelissen ,  Stephen Morgan ,  Maurits Van Der Schaar ,  Leonardus Henricus Marie Verstappen ,  Jen-Shiang Wang ,  Peter Hanzen Wardenier

IPC: G06F30/20 ,  G03F7/20 ,  G03F9/00

CPC classification number: G06F30/20 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70683 ,  G03F7/70633 ,  G03F9/7046 ,  G06F2111/10

Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.

公开(公告)号：US11385552B2

公开(公告)日：2022-07-12

申请号：US17039308

申请日：2020-09-30

Applicant: ASML Netherlands B.V.

Inventor： Martin Jacobus Johan Jak ,  Kaustuve Bhattacharyya

IPC: H01L23/544 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027

Abstract: An overlay metrology target (T) is formed by a lithographic process. A first image (740(0)) of the target structure is obtained using with illuminating radiation having a first angular distribution, the first image being formed using radiation diffracted in a first direction (X) and radiation diffracted in a second direction (Y). A second image (740(R)) of the target structure using illuminating radiation having a second angular illumination distribution which the same as the first angular distribution, but rotated 90 degrees. The first image and the second image can be used together so as to discriminate between radiation diffracted in the first direction and radiation diffracted in the second direction by the same part of the target structure. This discrimination allows overlay and other asymmetry-related properties to be measured independently in X and Y, even in the presence of two-dimensional structures within the same part of the target structure.

公开(公告)号：US10908513B2

公开(公告)日：2021-02-02

申请号：US16026507

申请日：2018-07-03

Applicant: ASML Netherlands B.V.

Inventor： Marc Johannes Noot ,  Simon Gijsbert Josephus Mathijssen ,  Kaustuve Bhattacharyya ,  Jinmoo Byun ,  Hyun-Su Kim ,  Won-Jae Jang ,  Timothy Dugan Davis

IPC: G03F7/20

Abstract: Disclosed are a method, computer program and a metrology apparatus for measuring a process effect parameter relating to a manufacturing process for manufacturing integrated circuits on a substrate. The method comprises determining for a structure, a first quality metric value for a quality metric from a plurality of measurement values each relating to a different measurement condition while cancelling or mitigating for the effect of the process effect parameter on the plurality of measurement values and a second quality metric value for the quality metric from at least one measurement value relating to at least one measurement condition without cancelling or mitigating for the effect of the process effect parameter on the at least one measurement value. The process effect parameter value for the process effect parameter can then be calculated from the first quality metric value and the second quality metric value, for example by calculating their difference.

公开(公告)号：US10901330B2

公开(公告)日：2021-01-26

申请号：US16417706

申请日：2019-05-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Arie Jeffrey Den Boef ,  Timothy Dugan Davis ,  Peter David Engblom ,  Kaustuve Bhattacharyya

IPC: G03F9/00 ,  G03F7/20 ,  G01B11/27

Abstract: A method including: determining recipe consistencies between one substrate measurement recipe of a plurality of substrate measurement recipes and each other substrate measurement recipe of the plurality of substrate measurement recipes; calculating a function of the recipe consistencies; eliminating the one substrate measurement recipe from the plurality of substrate measurement recipes if the function meets a criterion; and reiterating the determining, calculating and eliminating until a termination condition is met. Also disclosed herein is a substrate measurement apparatus, including a storage configured to store a plurality of substrate measurement recipes, and a processor configured to select one or more substrate measurement recipes from the plurality of substrate measurement recipes based on recipe consistencies among the plurality of substrate measurement recipes.

公开(公告)号：US10698322B2

公开(公告)日：2020-06-30

申请号：US16700381

申请日：2019-12-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya

IPC: G03F7/20 ,  G01B11/27 ,  G01B11/24

Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.

公开(公告)号：US10527949B2

公开(公告)日：2020-01-07

申请号：US14948001

申请日：2015-11-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya

IPC: G03F7/20 ,  G01B11/24 ,  G01B11/27

Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.

公开(公告)号：US10345709B2

公开(公告)日：2019-07-09

申请号：US16127296

申请日：2018-09-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956

Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.

公开(公告)号：US10025199B2

公开(公告)日：2018-07-17

申请号：US14656510

申请日：2015-03-12

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya

IPC: G03F7/20 ,  G03F9/00 ,  H01L23/544

Abstract: Metrology targets are formed by a lithographic process, each target comprising a bottom grating and a top grating. Overlay performance of the lithographic process can be measured by illuminating each target with radiation and observing asymmetry in diffracted radiation. Parameters of metrology recipe and target design are selected so as to maximize accuracy of measurement of overlay, rather than reproducibility. The method includes calculating at least one of a relative amplitude and a relative phase between (i) a first radiation component representing radiation diffracted by the top grating and (ii) a second radiation component representing radiation diffracted by the bottom grating after traveling through the top grating and intervening layers. The top grating design may be modified to bring the relative amplitude close to unity. The wavelength of illuminating radiation in the metrology recipe can be adjusted to bring the relative phase close to π/2 or 3π/2.