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公开(公告)号：US12032299B2
公开(公告)日：2024-07-09
申请号：US17784566
申请日：2020-12-03
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Igor Matheus Petronella Aarts , Kaustuve Bhattacharyya , Ralph Brinkhof , Leendert Jan Karssemeijer , Stefan Carolus Jacobus Antonius Keij , Haico Victor Kok , Simon Gijsbert Josephus Mathijssen , Henricus Johannes Lambertus Megens , Samee Ur Rehman
CPC classification number: G03F7/70633 , G03F7/706837 , G03F9/7034 , G03F9/7092
Abstract: A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.
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公开(公告)号：US11966166B2
公开(公告)日：2024-04-23
申请号：US17377648
申请日：2021-07-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Franciscus Godefridus Casper Bijnen , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Robert John Socha , Youping Zhang
CPC classification number: G03F7/70425 , G03F7/705 , G03F7/70516 , G03F7/70633 , G03F7/70683 , G03F7/7085 , G03F9/7046 , G03F9/7088 , G06F30/39
Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.
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公开(公告)号：US11029610B2
公开(公告)日：2021-06-08
申请号：US16650520
申请日：2018-09-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van T Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US20190235391A1
公开(公告)日：2019-08-01
申请号：US16229009
申请日：2018-12-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Franciscus Godefridus Casper BIJNEN , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Robert John Socha , Youping Zhang
CPC classification number: G03F7/7085 , G03F7/70425 , G03F7/70516 , G03F7/70633 , G03F7/70683 , G03F9/7046 , G03F9/7088 , G06F17/5068
Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.
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公开(公告)号：US11079684B2
公开(公告)日：2021-08-03
申请号：US16229009
申请日：2018-12-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Franciscus Godefridus Casper Bijnen , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Robert John Socha , Youping Zhang
Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.
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Patent Agency Ranking
公开(公告)号：US10527958B2
公开(公告)日：2020-01-07
申请号：US16132520
申请日：2018-09-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Sudharshanan Raghunathan , Boris Menchtchikov , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van't Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US11016397B2
公开(公告)日：2021-05-25
申请号：US15777601
申请日：2016-11-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Scott Anderson Middlebrooks , Omer Abubaker Omer Adam , Adrianus Cornelis Matheus Koopman , Henricus Johannes Lambertus Megens , Arie Jeffrey Den Boef
IPC: G03F7/20
Abstract: A method and a computer program product that relates to lithographic apparatuses and, processes, and more particularly to a method and computer program to inspect substrates produced by the lithographic apparatuses and processes. The method and/or computer program product includes determining contributions from independent sources from results measured from a lithography process or a substrate processed by the lithography process, wherein the results are measured using a plurality of different substrate measurement recipes.
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公开(公告)号：US10180628B2
公开(公告)日：2019-01-15
申请号：US14892176
申请日：2014-05-23
Applicant: ASML Netherlands B.V.
Inventor： Hugo Augustinus Joseph Cramer , Arie Jeffrey Den Boef , Henricus Johannes Lambertus Megens , Maurits Van Der Schaar , Te-Chih Huang
IPC: G03F7/20
Abstract: A method of determining a critical-dimension-related property, such as critical dimension (CD) or exposure dose, includes illuminating each of a plurality of periodic targets having different respective critical dimension biases, measuring intensity of radiation scattered by the targets, recognizing and extracting each grating from the image, determining a differential signal, and determining the CD-related property based on the differential signal, the CD biases and knowledge that the differential signal approximates to zero at a 1:1 line-to-space ratio of such periodic targets. Use of the determined CD-related property to control a lithography apparatus in lithographic processing of subsequent substrates. In order to use just two CD biases, a calibration may use measurements on a “golden wafer” (i.e. a reference substrate) to determine the intensity gradient for each of the CD pairs, with known CDs. Alternatively, the calibration can be based upon simulation of the sensitivity of intensity gradient to CD.
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公开(公告)号：US08994944B2
公开(公告)日：2015-03-31
申请号：US14149723
申请日：2014-01-07
Applicant: ASML Netherlands B.V.
Inventor： Hugo Augustinus Joseph Cramer , Arie Jeffrey Den Boef , Henricus Johannes Lambertus Megens , Hendrik Jan Hidde Smilde , Adrianus Johannes Hendrikus Schellekens , Michael Kubis
CPC classification number: G03F7/70641 , G01B11/02 , G01B11/22 , G01B11/24 , G01B11/30 , G01N21/47 , G01N21/88 , G03F7/70608 , G03F7/70625 , G03F7/70633 , G03F7/7065
Abstract: In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.
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公开(公告)号：US10962887B2
公开(公告)日：2021-03-30
申请号：US16686418
申请日：2019-11-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Sudharshanan Raghunathan , Boris Menchtchikov , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van't Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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