公开(公告)号：US11175248B2

公开(公告)日：2021-11-16

申请号：US16574970

申请日：2019-09-18

Applicant: ASML Netherlands B.V.

Inventor： Long Ma ,  Chih-Yu Jen ,  Zhonghua Dong ,  Peilei Zhang ,  Wei Fang ,  Chuan Li

IPC: G01N23/2251 ,  H01J37/28

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam apparatus for inspecting a wafer including an improved scanning mechanism for detecting fast-charging defects is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source that delivers charged particles to an area of the wafer and scans the area. The improved charged particle beam apparatus may further include a controller including a circuitry to produce multiple images of the area over a time sequence, which are compared to detect fast-charging defects.

公开(公告)号：US11651935B2

公开(公告)日：2023-05-16

申请号：US17365903

申请日：2021-07-01

Applicant: ASML Netherlands B.V.

Inventor： Chih-Yu Jen ,  Long Ma ,  Yongjun Wang ,  Jun Jiang

IPC: H01J37/147 ,  H01J37/26 ,  H01J37/30 ,  H01J37/153 ,  H01J37/22 ,  H01J37/28 ,  H01J37/21

CPC classification number: H01J37/1474 ,  H01J37/153 ,  H01J37/21 ,  H01J37/222 ,  H01J37/263 ,  H01J37/28 ,  H01J37/30 ,  H01J2237/082 ,  H01J2237/24564 ,  H01J2237/2817

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

公开(公告)号：US11056311B2

公开(公告)日：2021-07-06

申请号：US16552991

申请日：2019-08-27

Applicant: ASML Netherlands B.V.

Inventor： Chih-Yu Jen ,  Long Ma ,  Yongjun Wang ,  Jun Jiang

IPC: H01J37/147 ,  H01J37/26 ,  H01J37/30 ,  G01N21/95 ,  G01N21/88 ,  H01J37/153 ,  H01J37/18

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

公开(公告)号：US20200075287A1

公开(公告)日：2020-03-05

申请号：US16552991

申请日：2019-08-27

Applicant: ASML Netherlands B.V.

Inventor： Chih-Yu Jen ,  Long Ma ,  Yongjun Wang ,  Jun Jiang

IPC: H01J37/147 ,  H01J37/26 ,  H01J37/30

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.