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7 条记录 (耗时 0.015 秒)

    Time-dependent defect inspection apparatus
    1.
    发明授权
    Time-dependent defect inspection apparatus 有权

    公开(公告)号：US11056311B2

    公开(公告)日：2021-07-06

    申请号：US16552991

    申请日：2019-08-27

    申请人： ASML Netherlands B.V.

    发明人： Chih-Yu Jen ,  Long Ma ,  Yongjun Wang ,  Jun Jiang

    IPC分类号： H01J37/147 ,  H01J37/26 ,  H01J37/30 ,  G01N21/95 ,  G01N21/88 ,  H01J37/153 ,  H01J37/18

    摘要： An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

    TIME-DEPENDENT DEFECT INSPECTION APPARATUS
    2.
    发明申请
    TIME-DEPENDENT DEFECT INSPECTION APPARATUS 审中-公开

    公开(公告)号：US20200075287A1

    公开(公告)日：2020-03-05

    申请号：US16552991

    申请日：2019-08-27

    申请人： ASML Netherlands B.V.

    发明人： Chih-Yu Jen ,  Long Ma ,  Yongjun Wang ,  Jun Jiang

    IPC分类号： H01J37/147 ,  H01J37/26 ,  H01J37/30

    摘要： An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

    Wafer inspection based on electron beam induced current
    4.
    发明授权
    Wafer inspection based on electron beam induced current 有权

    公开(公告)号：US11501949B2

    公开(公告)日：2022-11-15

    申请号：US17251770

    申请日：2019-05-23

    申请人： ASML Netherlands B.V.

    发明人： Long Ma

    IPC分类号： H01J37/22 ,  H01J37/244 ,  H01J37/28

    摘要： A wafer inspection system is disclosed. According to certain embodiments, the system includes an electron detector that includes circuitry to detect secondary electrons or backscattered electrons (SE/BSE) emitted from a wafer. The electron beam system also includes a current detector that includes circuitry to detect an electron-beam-induced current (EBIC) from the wafer. The electron beam system further includes a controller having one or more processors and a memory, the controller including circuitry to: acquire data regarding the SE/BSE; acquire data regarding the EBIC; and determine structural information of the wafer based on an evaluation of the SE/BSE data and the EBIC data.

    System and method for scanning a sample using multi-beam inspection apparatus
    6.
    发明授权
    System and method for scanning a sample using multi-beam inspection apparatus 有权

    公开(公告)号：US11469076B2

    公开(公告)日：2022-10-11

    申请号：US17251724

    申请日：2019-06-07

    申请人： ASML Netherlands B.V.

    发明人： Martinus Gerardus Maria Johannes Massen ,  Joost Jeroen Ottens ,  Long Ma ,  Youfei Jiang ,  Weihua Yin ,  Wei-Te Li ,  Xuedong Liu

    IPC分类号： H01J37/26 ,  H01J37/147 ,  H01J37/22 ,  H01J37/28

    摘要： An improved system and method for inspection of a sample using a particle beam inspection apparatus, and more particularly, to systems and methods of scanning a sample with a plurality of charged particle beams. An improved method of scanning an area of a sample using N charged particle beams, wherein Nis an integer greater than or equal to two, and wherein the area of the sample comprises a plurality of scan sections of N consecutive scan lines, includes moving the sample in a first direction. The method also includes scanning, with a first charged particle beam of the N charged particle beams, first scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the first charged particle beam. The method further includes scanning, with a second charged particle beam of the N charged particle beams, second scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the second charged particle beam.

    TIME-DEPENDENT DEFECT INSPECTION APPARATUS
    7.
    发明申请
    TIME-DEPENDENT DEFECT INSPECTION APPARATUS 有权

    公开(公告)号：US20220005666A1

    公开(公告)日：2022-01-06

    申请号：US17365903

    申请日：2021-07-01

    申请人： ASML Netherlands B.V.

    发明人： Chih-Yu JEN ,  Long Ma ,  Yongjun Wang ,  Jun Jiang

    IPC分类号： H01J37/147 ,  H01J37/26 ,  H01J37/30 ,  G01N21/95 ,  G01N21/88 ,  H01J37/153

    摘要： An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.