公开(公告)号：US20210225781A1

公开(公告)日：2021-07-22

申请号：US16748559

申请日：2020-01-21

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Fan-Yu MIN ,  Chen-Hung LEE ,  Hsiu-Chi LIU ,  Liang-Chun CHEN

IPC: H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L21/48

Abstract: Present disclosure provides a semiconductor package structure, which includes a redistribution layer (RDL) structure, an electronic device, a first reinforcement structure, a second reinforcement structure, and an encapsulant. The RDL structure has a passivation layer and a patterned conductive layer disposed in the passivation layer. The electronic device is disposed on the RDL structure. The first reinforcement structure is disposed on the RDL structure and has a first modulus. The second reinforcement structure is disposed on the first reinforcement structure and has a second modulus substantially less than the first modulus. The encapsulant is disposed on the RDL structure and encapsulates the electronic device, the first reinforcement structure and the second reinforcement structure.

公开(公告)号：US20210265280A1

公开(公告)日：2021-08-26

申请号：US16798170

申请日：2020-02-21

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsu-Chiang SHIH ,  Hung-Yi LIN ,  Meng-Wei HSIEH ,  Yu Sheng CHANG ,  Hsiu-Chi LIU ,  Mark GERBER

IPC: H01L23/00 ,  H01L23/48 ,  H01L23/528 ,  H01L21/56

Abstract: A semiconductor device package includes an electronic component, an electrical contact and a reinforcement layer. The electronic component has a first conductive layer on a first surface of the electronic component. The electronic component has a through-silicon-via (TSV) penetrating the electronic component and electrically connected to the first conductive layer. The electrical contact is disposed on the first surface of the electronic component and electrically connected to the first conductive layer. The reinforcement layer is disposed on the first surface of the electronic component.

公开(公告)号：US20200219845A1

公开(公告)日：2020-07-09

申请号：US16241589

申请日：2019-01-07

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsiu-Chi LIU ,  Hsu-Nan FANG

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00 ,  H01L21/768 ,  H01L21/56

Abstract: A semiconductor package structure includes a conductive trace layer, a semiconductor die over the conductive trace layer, a structure enhancement layer surrounding the semiconductor die, and an encapsulant covering the semiconductor die and the structure enhancement layer. The structure enhancement layer coincides with a mass center plane of the semiconductor package structure. The mass center plane is parallel to a top surface of the semiconductor die. A method for manufacturing the semiconductor package structure is also provided.

公开(公告)号：US20230017013A1

公开(公告)日：2023-01-19

申请号：US17377169

申请日：2021-07-15

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Meng-Wei HSIEH ,  Hsiu-Chi LIU

IPC: H01L23/31 ,  H01L23/00 ,  H01L23/552 ,  H01L21/56

Abstract: A semiconductor package structure and a method of manufacturing the same are provided. The semiconductor package structure includes a first electronic component, a second electronic component, and a reinforcement component. The reinforcement component is disposed above the first electronic component and the second electronic component. The reinforcement component is configured to reduce warpage.

公开(公告)号：US20220359425A1

公开(公告)日：2022-11-10

申请号：US17752795

申请日：2022-05-24

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsu-Chiang SHIH ,  Hung-Yi LIN ,  Meng-Wei HSIEH ,  Yu Sheng CHANG ,  Hsiu-Chi LIU ,  Mark GERBER

IPC: H01L23/00 ,  H01L23/48 ,  H01L21/56 ,  H01L23/528

Abstract: A semiconductor device package includes an electronic component, an electrical contact and a reinforcement layer. The electronic component has a first conductive layer on a first surface of the electronic component. The electronic component has a through-silicon-via (TSV) penetrating the electronic component and electrically connected to the first conductive layer. The electrical contact is disposed on the first surface of the electronic component and electrically connected to the first conductive layer. The reinforcement layer is disposed on the first surface of the electronic component.