公开(公告)号：US20190393859A1

公开(公告)日：2019-12-26

申请号：US16443545

申请日：2019-06-17

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Mark GERBER

IPC: H03H9/10 ,  H03H9/02 ,  H03H9/17 ,  H03H9/54

Abstract: An electrical device includes an electronic component, a membrane and a cover. The electronic component has a first surface and a second surface opposite to the first surface. The electronic component has a cavity extending from the first surface of the electronic component into the electronic component. The membrane is disposed within the cavity of the electronic component. The cover is disposed on the first surface of the electronic component.

公开(公告)号：US20240112978A1

公开(公告)日：2024-04-04

申请号：US17956682

申请日：2022-09-29

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Vikas GUPTA ,  Mark GERBER

IPC: H01L23/373 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538

CPC classification number: H01L23/3735 ,  H01L23/3121 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/562 ,  H01L24/32 ,  H01L2224/32225

Abstract: An electronic package is provided. The electronic package includes an insulating carrier, a first conductive layer, and an electronic component. The first conductive layer is disposed over the insulating carrier. The electronic component is disposed over the first conductive layer and electrically connected to the first conductive layer, wherein the insulating carrier is configured to dissipate heat from the electronic component to a second side of the insulating carrier opposite to a first side facing the electronic component.

公开(公告)号：US20210265280A1

公开(公告)日：2021-08-26

申请号：US16798170

申请日：2020-02-21

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsu-Chiang SHIH ,  Hung-Yi LIN ,  Meng-Wei HSIEH ,  Yu Sheng CHANG ,  Hsiu-Chi LIU ,  Mark GERBER

IPC: H01L23/00 ,  H01L23/48 ,  H01L23/528 ,  H01L21/56

Abstract: A semiconductor device package includes an electronic component, an electrical contact and a reinforcement layer. The electronic component has a first conductive layer on a first surface of the electronic component. The electronic component has a through-silicon-via (TSV) penetrating the electronic component and electrically connected to the first conductive layer. The electrical contact is disposed on the first surface of the electronic component and electrically connected to the first conductive layer. The reinforcement layer is disposed on the first surface of the electronic component.

公开(公告)号：US20210028134A1

公开(公告)日：2021-01-28

申请号：US16937493

申请日：2020-07-23

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Mark GERBER

IPC: H01L23/00 ,  H01L25/18 ,  H01L21/56 ,  H01L25/00

Abstract: A semiconductor package structure and a method of manufacturing the semiconductor package structure are disclosed. The semiconductor package structure includes a first semiconductor device having an active surface, a redistribution structure in electrical connection with the first semiconductor device, and a second semiconductor device bonded to the active surface of the first semiconductor device, and disposed between the first semiconductor device and the redistribution structure.

公开(公告)号：US20170294389A1

公开(公告)日：2017-10-12

申请号：US15482464

申请日：2017-04-07

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Bradford FACTOR ,  Rich RICE ,  Mark GERBER

IPC: H01L23/00 ,  H01L25/10 ,  H01L25/00 ,  H01L23/373 ,  H01L25/065

CPC classification number: H01L23/562 ,  H01L23/3735 ,  H01L23/49816 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2225/06572 ,  H01L2225/06582 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00

Abstract: A semiconductor package structure includes a substrate, a first semiconductor device, a first encapsulant and a second encapsulant. The substrate has a first coefficient of thermal expansion CTE1. The first semiconductor device is disposed adjacent to a first surface of the substrate. The first encapsulant is disposed on the first surface of the substrate, and covers at least a portion of the first semiconductor device. The first encapsulant has a second coefficient of thermal expansion CTE2. The second encapsulant is disposed on a second surface of the substrate and has a third coefficient of thermal expansion CTE3. A difference between CTE1 and CTE2 is substantially equal to a difference between CTE1 and CTE3.

公开(公告)号：US20230123962A1

公开(公告)日：2023-04-20

申请号：US17503228

申请日：2021-10-15

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Mark GERBER

IPC: H01Q5/307

Abstract: The present disclosure provides an antenna device. The antenna device includes a dielectric element including a first region and a second region, a first antenna disposed on the first region, and a second antenna disposed on the second region. The first antenna and the second antenna are configured to operate in different frequencies. The first antenna and the second antenna are misaligned in directions perpendicular and parallel to a surface of the dielectric element on which the first antenna or the second antenna is disposed.

公开(公告)号：US20220359425A1

公开(公告)日：2022-11-10

申请号：US17752795

申请日：2022-05-24

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsu-Chiang SHIH ,  Hung-Yi LIN ,  Meng-Wei HSIEH ,  Yu Sheng CHANG ,  Hsiu-Chi LIU ,  Mark GERBER

IPC: H01L23/00 ,  H01L23/48 ,  H01L21/56 ,  H01L23/528

Abstract: A semiconductor device package includes an electronic component, an electrical contact and a reinforcement layer. The electronic component has a first conductive layer on a first surface of the electronic component. The electronic component has a through-silicon-via (TSV) penetrating the electronic component and electrically connected to the first conductive layer. The electrical contact is disposed on the first surface of the electronic component and electrically connected to the first conductive layer. The reinforcement layer is disposed on the first surface of the electronic component.