公开(公告)号：US20160240481A1

公开(公告)日：2016-08-18

申请号：US14624331

申请日：2015-02-17

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chia-Ching CHEN ,  Chin-Li KAO ,  Hung-Jen CHANG ,  Tang-Yuan CHEN ,  Wei-Hong LAI

IPC: H01L23/538 ,  H05K1/11 ,  H01L21/683 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01L23/5389 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/5385 ,  H01L2221/68345 ,  H01L2224/16227 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/15331 ,  H05K3/205 ,  H05K2201/10378

Abstract: Described herein are interposer substrate designs for warpage control, semiconductor structures including said interposer substrates, and fabricating processes thereof. An interposer substrate defines a cavity and further includes a reinforcement structure, wherein the reinforcement structure is used to control warpage of the semiconductor package structure.

Abstract translation: 这里描述了用于翘曲控制的插入式衬底设计，包括所述插入器衬底的半导体结构及其制造工艺。 插入器基板限定空腔并且还包括加强结构，其中加强结构用于控制半导体封装结构的翘曲。