公开(公告)号：US11552026B2

公开(公告)日：2023-01-10

申请号：US16264599

申请日：2019-01-31

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Cheng Yuan Chen ,  Jiming Li ,  Chun Chen Chen ,  Yuanhao Yu

IPC分类号： H01L23/552 ,  H01L23/31 ,  H01L23/498 ,  H01L23/66 ,  H01L23/00 ,  H01L21/56 ,  H01Q1/22 ,  H01Q1/52 ,  H01L21/48

摘要： A semiconductor package includes a substrate, a preformed feeding element, a preformed shielding element, and an encapsulant. The preformed feeding element is disposed on the substrate and the preformed feeding element is disposed on the substrate and adjacent to the preformed feeding element. The encapsulant encapsulates the preformed feeding element and the preformed shielding element.

公开(公告)号：US11824031B2

公开(公告)日：2023-11-21

申请号：US16898064

申请日：2020-06-10

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Chih-Cheng Lee ,  Jiming Li

IPC分类号： H01L23/00 ,  H01L23/48 ,  H01L23/31

CPC分类号： H01L24/20 ,  H01L23/3171 ,  H01L23/481 ,  H01L2924/15153

摘要： A semiconductor package structure and a method for manufacturing the same are provided. The semiconductor package structure includes a substrate, a chip and a dielectric structure. The substrate includes a first portion and a second portion surrounding the first portion. The second portion defines a cavity over the first portion. The chip includes a terminal on an upper surface of the chip. The dielectric structure fills the cavity and laterally encroaches over the upper surface of the chip. The dielectric structure is free from overlapping with the terminal of the chip.

公开(公告)号：US11658102B2

公开(公告)日：2023-05-23

申请号：US16749635

申请日：2020-01-22

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Yuanhao Yu ,  Cheng Yuan Chen ,  Chun Chen Chen ,  Jiming Li ,  Chien-Wen Tu

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L23/66

CPC分类号： H01L23/49811 ,  H01L21/4889 ,  H01L23/66 ,  H01L2223/6605

摘要： A semiconductor device package includes a carrier, an electronic component and a connector. The electronic component is disposed on the carrier. The connector is disposed on the carrier and electrically connected to the electronic component. A S11 parameter of the connector is less than −20 dB.

公开(公告)号：US20210391291A1

公开(公告)日：2021-12-16

申请号：US16898064

申请日：2020-06-10

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Chih-Cheng Lee ,  Jiming Li

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/48

摘要： A semiconductor package structure and a method for manufacturing the same are provided. The semiconductor package structure includes a substrate, a chip and a dielectric structure. The substrate includes a first portion and a second portion surrounding the first portion. The second portion defines a cavity over the first portion. The chip includes a terminal on an upper surface of the chip. The dielectric structure fills the cavity and laterally encroaches over the upper surface of the chip. The dielectric structure is free from overlapping with the terminal of the chip.