公开(公告)号：US20060217073A1

公开(公告)日：2006-09-28

申请号：US11349150

申请日：2006-02-08

申请人： Akihiro Saitou ,  Yoshiaki Hasegawa ,  Masao Yamaya

发明人： Akihiro Saitou ,  Yoshiaki Hasegawa ,  Masao Yamaya

IPC分类号： H04B17/00

CPC分类号： H04W52/20 ,  H04B17/21 ,  H04B17/29 ,  H04W52/24 ,  H04W52/242 ,  H04W52/245

摘要： A reception sensitivity is measured at a high precision. An access terminal function portion 126 includes the transmitter part 214 and receiver part 215 of a communication terminal in a radio communication system. A path switch part 132 effects switching so as to connect the input ends of receivers 134, etc. to antennas 116, etc., or to terminate them. Besides, the path switch part 132 switches the paths of a signal from a transmitter 133 and signals toward the receivers 134, etc. An access point controller 115 adjusts a packet error rate into a predetermined range, and it obtains the reception sensitivity on the basis of the transmission power of the access terminal function portion 126 after the adjustment. Alternatively, the access point controller 115 diagnoses the failures of the receiver and the signal path, depending upon whether or not the reception power value of the receiver 134 or the like in the case of connecting the receiver and the transmitter part 214 of the access terminal function portion, and the reception power value of the access terminal function portion in the case of connecting the transmitter 133 and the receiver part 215 of the access terminal function portion lie within predetermined ranges, respectively.

摘要翻译： 以高精度测量接收灵敏度。 接入终端功能部分126包括无线电通信系统中的通信终端的发射机部分214和接收机部分215。 路径切换部分132实现切换，以将接收机134的输入端等连接到天线116等，或者终止它们。 此外，路径切换部分132切换来自发射机133的信号的路径并向接收机134等发送信号。接入点控制器115将分组错误率调整到预定范围内，并且基于该接收灵敏度获得接收灵敏度 在调整后的接入终端功能部分126的发送功率。 或者，接入点控制器115根据在连接接入终端和接入终端的发射机部分214的情况下的接收机134的接收功率值是否诊断接收机的故障和信号路径 在连接接入终端功能部分的发射机133和接收机部分215的情况下，接入终端功能部分的接收功率值分别在预定范围内。

公开(公告)号：US20080139198A1

公开(公告)日：2008-06-12

申请号：US12068048

申请日：2008-02-01

申请人： Akihiro Saitou ,  Yoshiaki Hasegawa ,  Masao Yamaya

发明人： Akihiro Saitou ,  Yoshiaki Hasegawa ,  Masao Yamaya

IPC分类号： H04Q7/20

CPC分类号： H04W24/06 ,  H04W24/00 ,  H04W88/08

摘要： A reception sensitivity is measured at a high precision. An access terminal function portion includes the transmitter part and receiver part of a communication terminal in a radio communication system. A path switch part effects switching to connect the input ends of receivers to antennas or to terminate them. The path switch part switches the paths of a signal from a transmitter and signals toward the receivers. An access point controller adjusts a packet error rate into a predetermined range, and obtains the reception sensitivity based on the transmission power of the access terminal function portion after the adjustment.

摘要翻译： 以高精度测量接收灵敏度。 接入终端功能部分包括无线电通信系统中的通信终端的发射机部分和接收机部分。 路径切换部分实现切换以将接收机的输入端连接到天线或终止它们。 路径切换部分切换来自发射机的信号的路径并向接收机发送信号。 接入点控制器将分组错误率调整到预定范围内，并且在调整之后基于接入终端功能部分的发送功率获得接收灵敏度。

公开(公告)号：US07353020B2

公开(公告)日：2008-04-01

申请号：US11349150

申请日：2006-02-08

申请人： Akihiro Saitou ,  Yoshiaki Hasegawa ,  Masao Yamaya

发明人： Akihiro Saitou ,  Yoshiaki Hasegawa ,  Masao Yamaya

IPC分类号： H04Q7/20

CPC分类号： H04W52/20 ,  H04B17/21 ,  H04B17/29 ,  H04W52/24 ,  H04W52/242 ,  H04W52/245

摘要： A reception sensitivity is measured at a high precision. An access terminal function portion includes the transmitter part and receiver part of a communication terminal in a radio communication system. A path switch part effects switching so as to connect the input ends of receivers to antennas or to terminate them. The path switch part switches the paths of a signal from a transmitter and signals toward the receivers. An access point controller adjusts a packet error rate into a predetermined range, and obtains the reception sensitivity on the transmission power of the access terminal function portion after the adjustment.

摘要翻译： 以高精度测量接收灵敏度。 接入终端功能部分包括无线电通信系统中的通信终端的发射机部分和接收机部分。 路径切换部分实现切换，以将接收机的输入端连接到天线或终止它们。 路径切换部分切换来自发射机的信号的路径并向接收机发送信号。 接入点控制器将分组错误率调整到预定范围内，并且在调整之后获得接入终端功能部分的发送功率的接收灵敏度。

公开(公告)号：US07907908B2

公开(公告)日：2011-03-15

申请号：US12068048

申请日：2008-02-01

申请人： Akihiro Saitou ,  Yoshiaki Hasegawa ,  Masao Yamaya

发明人： Akihiro Saitou ,  Yoshiaki Hasegawa ,  Masao Yamaya

IPC分类号： H04B17/00 ,  H04B1/04 ,  H04B7/00

CPC分类号： H04W24/06 ,  H04W24/00 ,  H04W88/08

摘要： A reception sensitivity is measured at a high precision. An access terminal function portion includes the transmitter part and receiver part of a communication terminal in a radio communication system. A path switch part effects switching to connect the input ends of receivers to antennas or to terminate them. The path switch part switches the paths of a signal from a transmitter and signals toward the receivers. An access point controller adjusts a packet error rate into a predetermined range, and obtains the reception sensitivity based on the transmission power of the access terminal function portion after the adjustment.

摘要翻译： 以高精度测量接收灵敏度。 接入终端功能部分包括无线电通信系统中的通信终端的发射机部分和接收机部分。 路径切换部分实现切换以将接收机的输入端连接到天线或终止它们。 路径切换部分切换来自发射机的信号的路径并向接收机发送信号。 接入点控制器将分组错误率调整到预定范围，并且在调整之后基于接入终端功能部分的发送功率获得接收灵敏度。

公开(公告)号：US09209743B2

公开(公告)日：2015-12-08

申请号：US13594340

申请日：2012-08-24

申请人： Yoshiaki Hasegawa ,  Makoto Sato ,  Akihiro Suyama

发明人： Yoshiaki Hasegawa ,  Makoto Sato ,  Akihiro Suyama

IPC分类号： G01R31/11 ,  H02S50/10

CPC分类号： H02S50/10

摘要： According to one embodiment, an apparatus includes an first storage unit to store a value output by a communication unit, a second storage unit to store positional data indicating a place the modules, an third storage unit to store an output model indicating the relationship between a sunshine condition and an electrical output, a estimation unit to estimate a sunshine condition for each module based on the value and the output model, a forth storage unit to store the sunshine condition estimated, a correction unit to correct the sunshine condition, and a detection unit to calculate an expected electrical output for each module based on the corrected sunshine condition and the output model, and to detect a fault in the modules.

摘要翻译： 根据一个实施例，一种装置包括：第一存储单元，用于存储由通信单元输出的值;第二存储单元，用于存储指示模块位置的位置数据;第三存储单元，用于存储指示a的关系的输出模型 阳光条件和电输出;估计单元，用于基于所述值和所述输出模型估计每个模块的阳光条件;存储所估计的阳光条件的第四存储单元，用于校正阳光条件的校正单元和检测 单元，根据修正的阳光条件和输出模型计算每个模块的预期电气输出，并检测模块中的故障。

公开(公告)号：US20130262190A1

公开(公告)日：2013-10-03

申请号：US13710656

申请日：2012-12-11

申请人： Makoto SATO ,  Mari Nagasaka ,  Yoshiaki Hasegawa

发明人： Makoto SATO ,  Mari Nagasaka ,  Yoshiaki Hasegawa

IPC分类号： G06Q10/06

CPC分类号： G06Q10/0637 ,  G05B23/0283 ,  G05B2219/31337 ,  G06Q10/063

摘要： Maintenance actions, maintenance costs each differently corresponding to each maintenance action, a reference strategy and a fault model, are stored. If a system is maintained by each maintenance action at a first timing, if the system is degraded by the fault model from the first timing to a predetermined timing, and if the system is maintained by the reference strategy from a second timing after passing a predetermined period from the first timing to the predetermined timing, at least one search timing is set into a search period from the first timing to the second timing. A maintenance action value of each maintenance action is calculated at the search timing, based on an output and the maintenance cost of the system maintained from the first timing to the predetermined timing. An optimum maintenance action is selected from the maintenance actions, based on the maintenance action value of each maintenance action.

摘要翻译： 存储维护动作，维护成本各不相同，每个维护动作，参考策略和故障模型。 如果在第一定时通过每个维护动作维持系统，如果系统由故障模型从第一定时降级到预定定时，并且如果系统在通过预定的时间之后的第二定时由参考策略维护 从第一定时到预定定时，至少一个搜索定时被设置到从第一定时到第二定时的搜索周期。 基于从第一定时到预定定时保持的系统的输出和维护成本，在搜索时刻计算每个维护动作的维护动作值。 根据维护动作的维护动作值，从维护动作中选择最佳维护动作。

公开(公告)号：US08306085B2

公开(公告)日：2012-11-06

申请号：US13234326

申请日：2011-09-16

申请人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Yoshiaki Matsuda

发明人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Yoshiaki Matsuda

IPC分类号： H01S5/10

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/78 ,  H01L33/0095 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/2201 ,  Y10S148/028

摘要： The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 40 supported by an upper face of the substrate. First, a wafer 1 to be split into individual substrates is provided. A plurality of semiconductor layers composing the multilayer structure 40 are grown on the wafer 1. By cleaving the wafer 1 and the semiconductor layers, a cleavage plane in the multilayer structure 40 is formed. In the present invention, a plurality of voids are arranged at positions in the multilayer structure at which a cleavage plane is to be formed. Thus, cleavage can be performed with a good yield.

摘要翻译： 本发明涉及一种氮化物化合物半导体元件的制造方法，所述氮化物化合物半导体元件包括由所述基板的上表面支撑的基板和多层结构体40。 首先，设置分割成各个基板的晶片1。 构成多层结构40的多个半导体层在晶片1上生长。通过切割晶片1和半导体层，形成多层结构40中的解理面。 在本发明中，在形成有解理面的多层结构体的位置配置多个空隙。 因此，可以以良好的产率进行裂解。

公开(公告)号：US08194711B2

公开(公告)日：2012-06-05

申请号：US12470919

申请日：2009-05-22

申请人： Yoshiaki Hasegawa ,  Atsunori Mochida

发明人： Yoshiaki Hasegawa ,  Atsunori Mochida

IPC分类号： H01S5/00

CPC分类号： H01S5/0281 ,  B82Y20/00 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/22 ,  H01S5/34333

摘要： A nitride semiconductor laser device includes a multilayer structure including a plurality of nitride semiconductor layers including a light emitting layer, the multilayer structure having cavity facets facing each other, and a plurality of protective films made of a dielectric material provided on one of the cavity facets. The protective films include a first protective film, a second protective film and a third protective film. The first protective film contacts the cavity facet and is made of aluminum nitride. The second protective film is provided on a surface opposite to the cavity facet of the first protective film and is made of a material different from that of the first protective film. The third protective film is provided on a surface opposite to the first protective film of the second protective film and is made of the same material as that of the first protective film.

摘要翻译： 氮化物半导体激光器件包括多层结构，其包括多个氮化物半导体层，所述多个氮化物半导体层包括发光层，所述多层结构具有彼此面对的空腔面，以及多个由介电材料制成的保护膜，所述绝缘材料设置在所述腔面之一 。 保护膜包括第一保护膜，第二保护膜和第三保护膜。 第一保护膜接触腔面并由氮化铝制成。 第二保护膜设置在与第一保护膜的空腔面相对的表面上，并且由与第一保护膜不同的材料制成。 第三保护膜设置在与第二保护膜的第一保护膜相反的表面上，并且由与第一保护膜相同的材料制成。

公开(公告)号：US20110215340A1

公开(公告)日：2011-09-08

申请号：US13109213

申请日：2011-05-17

申请人： Naomi Anzue ,  Gaku Sugahara ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Toshiya Yokogawa

发明人： Naomi Anzue ,  Gaku Sugahara ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Toshiya Yokogawa

IPC分类号： H01L33/02

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01S5/0202 ,  H01S5/02272 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/3202 ,  H01S2304/04

摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.

摘要翻译： 根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。

公开(公告)号：US07880192B2

公开(公告)日：2011-02-01

申请号：US12159786

申请日：2006-12-27

申请人： Yoshiaki Hasegawa ,  Gaku Sugahara ,  Toshiya Yokogawa

发明人： Yoshiaki Hasegawa ,  Gaku Sugahara ,  Toshiya Yokogawa

IPC分类号： H01L21/06

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/22

摘要： A nitride semiconductor device according to the present invention includes a n-GaN substrate 10 and a semiconductor multilayer structure arranged on the principal surface of the n-GaN substrate 10 and including a p-type region, an n-type region and an active layer between them. An SiO2 layer 30 with an opening and a p-side electrode, which makes contact with a portion of the p-type region of the semiconductor multilayer structure, are arranged on the upper surface of the semiconductor multilayer structure. An n-side electrode 36 is arranged on the back surface of the substrate 10. The p-side electrode includes a p-side contact electrode 32 that contacts with the portion of the p-type region and a p-side interconnect electrode 34 that covers the p-side contact electrode 2 and the SiO2 layer 30. Part of the p-side contact electrode 32 is exposed under the p-side interconnect electrode 34.

摘要翻译： 根据本发明的氮化物半导体器件包括n-GaN衬底10和布置在n-GaN衬底10的主表面上并包括p型区，n型区和有源层的半导体多层结构 它们之间。 具有与半导体多层结构的p型区域的一部分接触的开口部和p侧电极的SiO2层30配置在半导体多层结构体的上表面。 n侧电极36配置在基板10的背面.p侧电极包括与p型区域的部分接触的p侧接触电极32和p侧配线电极34 覆盖p侧接触电极2和SiO 2层30. p侧接触电极32的一部分露出在p侧互连电极34的下方。