公开(公告)号：US5956859A

公开(公告)日：1999-09-28

申请号：US960033

申请日：1997-10-28

申请人： Akinori Matsumoto ,  Takeshi Kuroda ,  Cozy Ban ,  Toko Konishi ,  Naoki Yokoi

发明人： Akinori Matsumoto ,  Takeshi Kuroda ,  Cozy Ban ,  Toko Konishi ,  Naoki Yokoi

IPC分类号： H01L21/304 ,  H01L21/00 ,  F26B21/06

CPC分类号： H01L21/67034

摘要： A drying apparatus for processing a surface of a substrate wherein, when a nitrogen gas is fed to a nozzle, a jet of the nitrogen gas spouted through a jet hole is generated. The jet becomes film-shaped and is projected upwardly along an inner surface of a side wall of a processing vessel. Then, the jet is collected into an outside through a suction port formed in an upper portion of the processing vessel. The inner surface of the side wall of the processing vessel is covered with the jet. Therefore, an IPA vapor can be prevented from condensing uselessly on the inner surface. As a result, the IPA vapor is effectively utilized for condensation on a surface of the object to be processed which is mounted on a pan. Thus, defective dryness of the object can be prevented.

摘要翻译： 一种用于处理基板表面的干燥装置，其中当将氮气供给到喷嘴时，产生通过喷射孔喷出的氮气的射流。 射流变成膜状，并沿处理容器的侧壁的内表面向上突出。 然后，通过形成在处理容器的上部的吸入口将射流收集到外部。 处理容器的侧壁的内表面被喷射器覆盖。 因此，可以防止IPA蒸气在内表面上无用地冷凝。 结果，IPA蒸汽被有效地用于在安装在锅上的待处理物体的表面上的冷凝。 因此，可以防止物体的干燥不良。

公开(公告)号：US5996242A

公开(公告)日：1999-12-07

申请号：US935838

申请日：1997-09-23

申请人： Akinori Matsumoto ,  Takeshi Kuroda ,  Cozy Ban ,  Toko Konishi ,  Naoki Yokoi

发明人： Akinori Matsumoto ,  Takeshi Kuroda ,  Cozy Ban ,  Toko Konishi ,  Naoki Yokoi

IPC分类号： H01L21/304 ,  H01L21/00 ,  F26B21/06

CPC分类号： H01L21/67034

摘要： A nozzle and an exhaust member are provided opposite to each other with an upward opening of a processing vessel interposed therebetween. A side wall of the processing vessel is smoothly curved inward as the opening is approached upward. The nozzle spouts a nitrogen gas fed from a nitrogen gas feeder as a jet for covering the opening toward an exhaust port of the exhaust member. The jet can effectively function as a curtain because the side wall of the processing vessel is curved. Therefore, a cooling coil necessary for a conventional apparatus is not required. Consequently, instability of the state of the IPA vapor caused by the cooling coil can be eliminated so that defective dryness is relieved or eliminated.

摘要翻译： 喷嘴和排气构件彼此相对地设置有处于其间的处理容器的向上开口。 当开口向上接近时，处理容器的侧壁平滑地向内弯曲。 喷嘴喷出从氮气供给器供给的氮气作为用于向排气构件的排气口覆盖开口的喷射器。 由于处理容器的侧壁是弯曲的，所以喷射器可以有效地起到幕帘的作用。 因此，不需要常规装置所需的冷却盘管。 因此，可以消除由冷却盘管引起的IPA蒸汽的状态的不稳定性，从而消除或消除有缺陷的干燥。

公开(公告)号：US6032382A

公开(公告)日：2000-03-07

申请号：US969201

申请日：1997-11-12

申请人： Akinori Matsumoto ,  Takeshi Kuroda ,  Cozy Ban ,  Toko Konishi ,  Naoki Yokoi

发明人： Akinori Matsumoto ,  Takeshi Kuroda ,  Cozy Ban ,  Toko Konishi ,  Naoki Yokoi

IPC分类号： H01L21/304 ,  H01L21/00 ,  H01L21/306 ,  F26B21/06

CPC分类号： H01L21/02052 ,  H01L21/67034

摘要： When an IPA is fed to a nozzle, a flow of the IPA passing through holes is generated. The flow becomes film-shaped and goes downward along an inner surface of a side wall of a processing vessel. Then, the flow is collected by a liquid receiving section formed in a lower portion of the processing vessel and discharged to an outside. The inner surface of the side wall of the processing vessel is covered with the flow of the IPA. Therefore, an IPA vapor can be prevented from condensing uselessly on the inner surface. As a result, the IPA vapor is effectively utilized for condensation on a surface of the object to be processed which is mounted on a pan. Thus, the defective dryness of the object can be prevented.

摘要翻译： 当IPA被送入喷嘴时，产生通过空气的IPA的流动。 流动变成膜状并沿处理容器的侧壁的内表面向下流动。 然后，流动被形成在处理容器的下部的液体接收部分收集并排出到外部。 处理容器侧壁的内表面被IPA的流动覆盖。 因此，可以防止IPA蒸气在内表面上无用地冷凝。 结果，IPA蒸汽被有效地用于在安装在锅上的待处理物体的表面上的冷凝。 因此，可以防止物体的有缺陷的干燥。

公开(公告)号：US06391113B1

公开(公告)日：2002-05-21

申请号：US09088701

申请日：1998-06-02

申请人： Toko Konishi ,  Naoki Yokoi

发明人： Toko Konishi ,  Naoki Yokoi

IPC分类号： C23C1600

CPC分类号： H01L21/67276 ,  H01L21/67028

摘要： Semiconductor wafer counters are respectively provided at a loader portion, at a plurality of processing baths and at an unloader portion in a semiconductor wafer processing apparatus in which semiconductor wafers are processed in sequence using a plurality of processing baths, and when missing of wafers is detected, an alarm is issued. Also, there is provided an interlock function which stops processing in a processing bath in which the missing is detected and allows processing in downstream processing baths to continue, but prevents additional lots from being introduced into the loader portion and stops processing in upstream processing baths after the completion of the chemical processing under way.

摘要翻译： 半导体晶片计数器分别设置在半导体晶片处理装置中的多个处理槽和卸载器部分的装载器部分处，其中使用多个处理槽依次处理半导体晶片，并且当检测到晶片缺失时 发出警报。 另外，提供了一种互锁功能，其在检测到缺失物的处理槽中停止处理，并允许在下游处理槽中的处理继续进行，但是防止了额外的批次被引入装载器部分中，并且在上游处理槽中停止处理 正在进行化学处理的完成。

公开(公告)号：US06837963B2

公开(公告)日：2005-01-04

申请号：US09982779

申请日：2001-10-22

申请人： Hiroshi Tanaka ,  Naoki Yokoi ,  Yasuhiro Asaoka ,  Seiji Muranaka ,  Toshihiko Nagai

发明人： Hiroshi Tanaka ,  Naoki Yokoi ,  Yasuhiro Asaoka ,  Seiji Muranaka ,  Toshihiko Nagai

IPC分类号： H01L21/302 ,  B08B7/00 ,  H01L21/00 ,  H01L21/205 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  C23F1/00 ,  C23C16/00

CPC分类号： H01L21/02046 ,  B08B7/0035 ,  H01J2237/335 ,  H01L21/02052 ,  H01L21/67028

摘要： A semiconductor device producing method that can clean an edge part of a semiconductor substrate with certainty is provided. The method of producing a semiconductor device includes a step of generating ions and a step of accelerating the ions by means of an electric field and radiating an ion flow onto an edge part of a semiconductor substrate to clean the edge part of the semiconductor substrate. The semiconductor substrate is moved relative to the ion flow while maintaining a state in which the ion flow is being radiated onto the edge part. The step of generating ions includes applying a high-frequency voltage between a pair of electrodes to generate the ions between the electrodes.

摘要翻译： 提供一种可以确定地清洁半导体衬底的边缘部分的半导体器件制造方法。 制造半导体器件的方法包括产生离子的步骤和通过电场加速离子并将离子流辐射到半导体衬底的边缘部分以清洁半导体衬底的边缘部分的步骤。 半导体衬底相对于离子流移动，同时保持离子流被辐射到边缘部分上的状态。 产生离子的步骤包括在一对电极之间施加高频电压以在电极之间产生离子。

公开(公告)号：US4544936A

公开(公告)日：1985-10-01

申请号：US499663

申请日：1983-05-31

申请人： Naoki Yokoi

发明人： Naoki Yokoi

IPC分类号： B41M5/327 ,  B41M5/333 ,  C09B11/00 ,  C09B11/28 ,  B41M5/18

CPC分类号： B41M5/3275

摘要： A heat-sensitive recording sheet is disclosed, comprising a base having thereon a heat-sensitive layer which contains, as main components, at least two kinds of fluoran dye color formers selected from different groups and a developer which causes coloration of the color former by heating. The color image of the heat-sensitive recording sheet fades less under influence of heat or humidity. Further the heat-sensitive recording sheet has high whiteness and less fogging of the background.

摘要翻译： 公开了一种热敏记录片材，其包括其上具有热敏层的基底，该热敏层含有选自不同组的至少两种荧光染料着色剂和显影剂，作为主要组分， 加热。 热敏记录纸的彩色图像在热或湿度的影响下变得较少。 此外，热敏记录片材具有高白度和较少的背景雾化。

公开(公告)号：US08258630B2

公开(公告)日：2012-09-04

申请号：US12605504

申请日：2009-10-26

申请人： Naoki Yokoi

发明人： Naoki Yokoi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L21/76831 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a first layer; a second layer above the first layer; first and second multi-layered structures; and a supporter. The first and second multi-layered structures extend from the first layer to connect to the second layer. The supporter extends from the first layer to connect to the second layer. The supporter is between the first and second multi-layered structures. The supporter is separated from the first and second multi-layered structures by empty space.

摘要翻译： 半导体器件包括：第一层; 第一层上面的第二层; 第一和第二多层结构; 和支持者。 第一和第二多层结构从第一层延伸以连接到第二层。 支持者从第一层延伸到连接到第二层。 支撑体位于第一和第二多层结构之间。 支持者通过空白空间与第一和第二多层结构分离。

公开(公告)号：US20060099768A1

公开(公告)日：2006-05-11

申请号：US11255972

申请日：2005-10-24

申请人： Naoki Yokoi

发明人： Naoki Yokoi

IPC分类号： H01L21/20

CPC分类号： H01L27/10852 ,  H01L21/3146 ,  H01L28/91

摘要： A method of manufacturing a stack capacitance type capacitor is provided, which prevents the problem that the capacitor cannot be formed because a lower electrode collapses with the external wall thereof exposed in forming the lower electrode of the capacitor in a deep hole formed in silicon oxide, and removing silicon oxide that is a support base material for the lower electrode using a solution containing hydrogen fluoride to expose the external wall of the lower electrode. According to the invention, the support base material in which a deep hole is formed is formed with an amorphous carbon film, the amorphous carbon film used as the support base material for the lower electrode is removed by dry etching after forming the lower electrode, and it is thereby possible to prevent the lower electrode from collapsing.

摘要翻译： 提供一种堆叠电容型电容器的制造方法，其防止了在形成于氧化硅中的深孔中下电极与形成电容器的下电极的露出的外壁塌陷而不能形成电容器的问题， 并使用含氟化氢的溶液除去作为下部电极的支撑基材的氧化硅，露出下部电极的外壁。 根据本发明，形成有深孔的支撑基材由无定形碳膜形成，在形成下电极之后，通过干蚀刻除去用作下电极的支撑基材的非晶碳膜， 从而可以防止下电极塌陷。

公开(公告)号：US06596630B2

公开(公告)日：2003-07-22

申请号：US10206107

申请日：2002-07-29

申请人： Naoki Yokoi

发明人： Naoki Yokoi

IPC分类号： H01L214763

CPC分类号： H01L21/02071 ,  H01L21/02063 ,  H01L21/76838 ,  H01L21/76889

摘要： A semiconductor device manufactured by cleaning without dissolving W, Ti, or TiN even if these metallic materials are exposed on the substrates to be cleaned, and a method for manufacturing such a semiconductor device. Impurities present on a silicon substrate can be removed while controlling the etching of a tungsten film exposed on the surface of a silicon substrate, by dipping and cleaning the silicon substrate in one or a plurality of chemical solutions selected from a group consisting of HF, HCl, and NH4OH, under the condition that the surface of the silicon substrate is entirely covered with a tungsten film. After dry etching for patterning the tungsten film and the barrier metal, impurities present on a silicon substrate can be removed while controlling the etching of the tungsten film and the barrier metal exposed on the surface of a silicon substrate, by dipping and cleaning the silicon substrate in one or a plurality of chemical solutions selected from a group consisting of HCl and NH4OH.

摘要翻译： 即使这些金属材料暴露在待清洗的基板上，也可以通过清洗而不溶解W，Ti或TiN来制造半导体器件，以及制造这种半导体器件的方法。 可以通过在一个或多个选自HF，HCl的一种或多种化学溶液中浸渍和清洁硅衬底来控制存在于硅衬底上的杂质，同时控制暴露在硅衬底的表面上的钨膜的蚀刻 和NH 4 OH，在硅衬底的表面完全被钨膜覆盖的条件下。 在对钨膜和阻挡金属进行图案化的干蚀刻之后，可以通过浸渍和清洗硅衬底来控制存在于硅衬底上的杂质，同时控制暴露在硅衬底表面上的钨膜和阻挡金属的蚀刻 在一种或多种选自HCl和NH 4 OH的化学溶液中。

公开(公告)号：US4603970A

公开(公告)日：1986-08-05

申请号：US509510

申请日：1983-06-30

申请人： Koichi Aota ,  Katsuhiko Ishikawa ,  Naoki Yokoi

发明人： Koichi Aota ,  Katsuhiko Ishikawa ,  Naoki Yokoi

IPC分类号： G03G21/04 ,  G03B27/52

CPC分类号： G03G21/046

摘要： An apparatus for inhibiting the copying of confidential documents is disclosed. Confidential documents are treated with an infrared ray-absorbing agent. The apparatus for inhibiting the copying of confidential documents is comprised of a means to detect the presence of the infrared ray-absorbing agent, and a means to stop a copying operation upon detection of the agent or a means to start a control system to make the documents unreadable. Documents may also be provided with a metal layer. The apparatus is then comprised of a means to detect the presence of the metal layer and a means to stop a copying operation or to start a control system adapted to make copied materials undistinguishable or unreadable upon detection of the metal layer.

摘要翻译： 公开了一种用于禁止复印机密文件的装置。 机密文件用红外线吸收剂处理。 用于禁止复印机密文件的装置包括检测红外线吸收剂的存在的装置，以及在检测到该试剂时停止复印操作的装置或启动控制系统的装置， 文件不可读。 文件也可以设置有金属层。 然后，该装置包括检测金属层的存在的装置和用于停止复印操作或启动适于在检测到金属层时使复制材料不可区分或不可读的控制系统的装置。