METHOD OF APPARATUS FOR DETECTING PARTICLES ON A SPECIMEN
    1.
    发明申请
    METHOD OF APPARATUS FOR DETECTING PARTICLES ON A SPECIMEN 有权
    检测样品中颗粒物的方法

    公开(公告)号:US20110228258A1

    公开(公告)日:2011-09-22

    申请号:US13118004

    申请日:2011-05-27

    IPC分类号: G01N21/88

    CPC分类号: G01N21/956

    摘要: A method and apparatus of detecting a defect by inspecting a specimen in which a surface of a specimen on which plural patterns are formed is illuminated with an elongated shape light flux from one of plural directions which are different in elevation angle by switching an optical path of the light flux emitted from an illuminating light source in accordance with a kind of defect to be detected. Plural optical images of the specimen illuminated by the elongated shape light flux are captured with plural image sensors installed in different elevation angle directions by changing an enlarging magnification in accordance with a density of the pattern formed on the sample in an area irradiated with the illuminating elongated shape light flux. A defect on the specimen is detected by processing the images captured by the plural image sensors.

    摘要翻译: 通过检查其中形成有多个图案的样本的表面的样本来检测缺陷的方法和装置,通过从仰角不同的多个方向之一的细长形状的光束照射, 根据要检测的缺陷的种类从照明光源发射的光束。 通过用安装在不同仰角方向上的多个图像传感器捕获由细长形状光束照射的样本的多个光学图像,通过根据在照射细长的照射区域中在样品上形成的图案的密度来改变放大倍率 形状光通量。 通过处理由多个图像传感器捕获的图像来检测样本上的缺陷。

    METHOD AND APPARATUS FOR DETECTING DEFECTS
    5.
    发明申请
    METHOD AND APPARATUS FOR DETECTING DEFECTS 审中-公开
    检测缺陷的方法和装置

    公开(公告)号:US20100103409A1

    公开(公告)日:2010-04-29

    申请号:US12652452

    申请日:2010-01-05

    IPC分类号: G01N21/88

    摘要: An inspection apparatus projects a laser beam on the surface of a SOI wafer and detects foreign matter on and defects in the surface of the SOI wafer by receiving scattered light reflected from the surface of the SOI wafer. The wavelength of the laser beam used by the inspection apparatus is determined so that a penetration depth of the laser beam in a Si thin film may be 10 nm or below to detect only foreign matter on and defects in the outermost surface and not to detect foreign matter and defects in a BOX layer. Only the foreign matter on and defects in the outermost surface layer can be detected without being influenced by thin-film interference by projecting the laser beam on the surface of the SOI wafer and receiving scattered light rays.

    摘要翻译: 检查装置将激光束投射在SOI晶片的表面上,通过接收从SOI晶片的表面反射的散射光来检测SOI晶片的异物和表面的缺陷。 确定检查装置使用的激光束的波长,使得Si薄膜中的激光束的穿透深度可以为10nm以下,仅检测异物和最外表面的缺陷,并且不检测外部 BOX层的物质和缺陷。 只有通过将激光束投射在SOI晶片的表面上并且接收散射光线,才能够检测出最外层的异物和缺陷,而不受薄膜干涉的影响。