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公开(公告)号：US08633101B2
公开(公告)日：2014-01-21
申请号：US13499652
申请日：2010-09-02
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/44 , H01L21/302 , H01L21/461 , H01L21/31
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： A manufacturing method of a semiconductor device including an electrode having low contact resistivity to a nitride semiconductor is provided. The manufacturing method includes a carbon containing layer forming step of forming a carbon containing layer containing carbon on a nitride semiconductor layer, and a titanium containing layer forming step of forming a titanium containing layer containing titanium on the carbon containing layer. A complete solid solution Ti (C, N) layer of TiN and TiC is formed between the titanium containing layer and the nitride semiconductor layer. As a result, the titanium containing layer comes to be in ohmic contact with the nitride semiconductor layer throughout the border therebetween.
摘要翻译： 提供了包括对氮化物半导体具有低接触电阻的电极的半导体器件的制造方法。 制造方法包括在氮化物半导体层上形成含有碳的含碳层的含碳层形成工序和在含碳层上形成含有钛的含钛层的含钛层形成工序。 在含钛层和氮化物半导体层之间形成TiN和TiC的完全固溶Ti（C，N）层。 结果，含钛层在其间的整个边界处与氮化物半导体层欧姆接触。
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公开(公告)号：US08716121B2
公开(公告)日：2014-05-06
申请号：US13384850
申请日：2010-08-04
IPC分类号： H01L29/161 , H01L21/28 , H01L29/45
CPC分类号： H01L29/7802 , H01L21/0485 , H01L29/1608 , H01L29/45 , H01L29/66068 , H01L29/7395 , H01L29/78
摘要： An ohmic electrode for a p-type SiC semiconductor, and a method of forming the ohmic electrode. The ohmic electrode has an ohmic electrode layer, which has an amorphous structure and which is made of a Ti(1-x-y)Si(x)C(y) ternary film of which a composition ratio is within a composition range that is surrounded by two lines and two curves expressed by an expression x=0 (0.35≦y≦0.5), an expression y=−1.120x+0.5200 (0.1667≦x≦0.375), an expression y=1.778(x−0.375)2+0.1 (0≦x≦0.375) and an expression y=−2.504x2−0.5828x+0.5 (0≦x≦0.1667) and that excludes the line expressed by the expression x=0. The ohmic layer is directly laminated on a surface of a p-type SiC semiconductor.
摘要翻译： 用于p型SiC半导体的欧姆电极，以及形成欧姆电极的方法。 欧姆电极具有欧姆电极层，其具有非晶结构，并且由Ti（1-xy）Si（x）C（y）三元膜制成，其组成比在由 由表达式x = 0（0.35＆nlE; y＆nlE; 0.5）表示的两行和两条曲线，表达式y = -1.120x + 0.5200（0.1667＆nlE; x＆lt; lI; 0.375），表达式y = 1.778（x-0.375）2 +0.1（0＆nlE; x＆nlE; 0.375），并且表达式y = -2.504x2-0.5828x + 0.5（0＆nlE; x＆nlE; 0.1667），并且排除由表达式x = 0表示的行。 欧姆层直接层压在p型SiC半导体的表面上。
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公开(公告)号：US07879705B2
公开(公告)日：2011-02-01
申请号：US12440939
申请日：2007-09-21
CPC分类号： H01L29/7802 , H01L21/046 , H01L29/1608 , H01L29/45 , H01L29/78 , Y10S438/931
摘要： A method is set forth of forming an ohmic electrode having good characteristics on a SiC semiconductor layer. In the method, a Ti-layer and an Al-layer are formed on a surface of the SiC substrate. The SiC substrate having the Ti-layer and the Al-layer is maintained at a temperature that is higher than or equal to a first temperature and lower than a second temperature until all Ti in the Ti-layer has reacted with Al. The first temperature is the minimum temperature of a temperature zone at which the Ti reacts with the Al to form Al3Ti, and the second temperature is the minimum temperature of a temperature zone at which the Al3Ti reacts with SiC to form Ti3SiC2. As a result of this maintaining of temperature step, an Al3Ti-layer is formed on the surface of the SiC substrate. The method also comprises further heating the SiC substrate having the Al3Ti-layer to a temperature that is higher than the second temperature. As a result of this step of further heating the SiC substrate reacts with Al3Ti of the Al3Ti-layer to form a Ti3SiC2-layer on the surface of the SiC substrate.
摘要翻译： 阐述了在SiC半导体层上形成具有良好特性的欧姆电极的方法。 在该方法中，在SiC衬底的表面上形成Ti层和Al层。 具有Ti层和Al层的SiC衬底保持在高于或等于第一温度并低于第二温度的温度，直到Ti层中的所有Ti都与Al反应。 第一个温度是Ti与Al反应形成Al3Ti的温度区的最低温度，第二个温度是Al3Ti与SiC反应形成Ti3SiC2的温度区的最低温度。 由于这种维持温度步骤的结果，在SiC衬底的表面上形成Al 3 Ti层。 该方法还包括将具有Al 3 Ti层的SiC衬底进一步加热到高于第二温度的温度。 作为进一步加热的步骤的结果，SiC衬底与Al 3 Ti层的Al 3 Ti反应以在SiC衬底的表面上形成Ti 3 SiC 2层。
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公开(公告)号：US20120217639A1
公开(公告)日：2012-08-30
申请号：US13499652
申请日：2010-09-02
IPC分类号： H01L23/482 , H01L21/74
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： A manufacturing method of a semiconductor device including an electrode having low contact resistivity to a nitride semiconductor is provided. The manufacturing method includes a carbon containing layer forming step of forming a carbon containing layer containing carbon on a nitride semiconductor layer, and a titanium containing layer forming step of forming a titanium containing layer containing titanium on the carbon containing layer. A complete solid solution Ti (C, N) layer of TiN and TiC is formed between the titanium containing layer and the nitride semiconductor layer. As a result, the titanium containing layer comes to be in ohmic contact with the nitride semiconductor layer throughout the border therebetween.
摘要翻译： 提供了包括对氮化物半导体具有低接触电阻的电极的半导体器件的制造方法。 制造方法包括在氮化物半导体层上形成含有碳的含碳层的含碳层形成工序和在含碳层上形成含有钛的含钛层的含钛层形成工序。 在含钛层和氮化物半导体层之间形成TiN和TiC的完全固溶Ti（C，N）层。 结果，含钛层在其间的整个边界处与氮化物半导体层欧姆接触。
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公开(公告)号：US20100102332A1
公开(公告)日：2010-04-29
申请号：US12530901
申请日：2008-03-13
IPC分类号： H01L29/24 , H01L21/768
CPC分类号： H01L29/7813 , H01L21/0485 , H01L29/1608 , H01L29/41766 , H01L29/45 , H01L29/732 , Y10S438/931
摘要： A method of forming an Ohmic contact on a P-type 4H—SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H—SiC substrate including a deposition step of successively depositing a 1 to 60 nm thick first Al layer, Ti layer, and second Al layer on a P-type 4H—SiC substrate and an alloying step of forming an alloy layer between the SiC substrate and the Ti layer through the first Al layer by heat treatment in a nonoxidizing atmosphere. An Ohmic contact on a P-type 4H—SiC substrate formed by this method is also provided.
摘要翻译： 提供了在P型4H-SiC上形成欧姆接触的方法和由其形成的欧姆接触。 在P型4H-SiC衬底上形成欧姆接触的方法，包括在P型4H-SiC衬底上依次沉积1至60nm厚的第一Al层，Ti层和第二Al层的沉积步骤;以及 合金化步骤，通过在非氧化气氛中的热处理，通过第一Al层在SiC衬底和Ti层之间形成合金层。 还提供了通过该方法形成的P型4H-SiC衬底上的欧姆接触。
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公开(公告)号：US20120132927A1
公开(公告)日：2012-05-31
申请号：US13384850
申请日：2010-08-04
IPC分类号： H01L29/161 , H01L21/28
CPC分类号： H01L29/7802 , H01L21/0485 , H01L29/1608 , H01L29/45 , H01L29/66068 , H01L29/7395 , H01L29/78
摘要： An ohmic electrode for a p-type SiC semiconductor, and a method of forming the ohmic electrode. The ohmic electrode has an ohmic electrode layer, which has an amorphous structure and which is made of a Ti(1−x−y)Si(s)C(y) ternary film of which a composition ratio is within a composition range that is surrounded by two lines and two curves expressed by an expression x=0 (0.35≦y≦0.5), an expression y=−1.120x+0.5200 (0.1667≦x≦0.375), an expression y=1.778(x−0.375)2+0.1 (0≦x≦0.375) and an expression y=−2.504x2−0.5828x+0.5 (0≦x≦0.1667) and that excludes the line expressed by the expression x=0. The ohmic layer is directly laminated on a surface of a p-type SiC semiconductor.
摘要翻译： 用于p型SiC半导体的欧姆电极，以及形成欧姆电极的方法。 欧姆电极具有欧姆电极层，其具有非晶结构，其由组成比在组成范围内的Ti（1-x-y）Si（s）C（y）三元膜制成 由表达式x = 0（0.35＆nlE; y＆nlE; 0.5）表示的两条线和两条曲线包围，表达式y = -1.120x + 0.5200（0.1667＆nlE; x＆amp; nlE; 0.375），表达式y = 1.778（x-0.375 ）2 + 0.1（0＆nlE; x＆nlE; 0.375），并且表达式y = -2.504x2-0.5828x + 0.5（0＆nlE; x＆nlE; 0.1667），并且排除由表达式x = 0表示的行。 欧姆层直接层压在p型SiC半导体的表面上。
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公开(公告)号：US20110287626A1
公开(公告)日：2011-11-24
申请号：US13146208
申请日：2010-01-29
IPC分类号： H01L21/283
CPC分类号： H01L29/45 , H01L21/0485 , H01L29/1608
摘要： The invention provides an ohmic electrode of a p-type SiC semiconductor element, which includes an ohmic electrode layer that is made of Ti3SiC2, and that is formed directly on a surface of a p-type SiC semiconductor. The invention also provides a method of forming an ohmic electrode of a p-type SiC semiconductor element. The ohmic electrode includes an ohmic electrode layer that is made of Ti3SiC2, and that is formed directly on a surface of a p-type SiC semiconductor. The method includes forming a ternary mixed film that includes Ti, Si, and C in a manner such that an atomic composition ratio, Ti:Si:C is 3:1:2, on a surface of a p-type SiC semiconductor to produce a laminated film; and annealing the produced laminated film under vacuum or under an inert gas atmosphere.
摘要翻译： 本发明提供了一种p型SiC半导体元件的欧姆电极，其包括由Ti 3 SiC 2制成的欧姆电极层，其直接形成在p型SiC半导体的表面上。 本发明还提供了形成p型SiC半导体元件的欧姆电极的方法。 欧姆电极包括由Ti 3 SiC 2制成并且直接形成在p型SiC半导体的表面上的欧姆电极层。 该方法包括以使得在p型SiC半导体的表面上的原子组成比Ti:Si:C为3:1:2的方式形成包括Ti，Si和C的三元混合膜，以产生 层压膜; 并在真空或惰性气体气氛下退火生产的层压膜。
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公开(公告)号：US20090233435A1
公开(公告)日：2009-09-17
申请号：US12440939
申请日：2007-09-21
IPC分类号： H01L21/285
CPC分类号： H01L29/7802 , H01L21/046 , H01L29/1608 , H01L29/45 , H01L29/78 , Y10S438/931
摘要： A method is set forth of forming an ohmic electrode having good characteristics on a SiC semiconductor layer. In the method, a Ti-layer and an Al-layer are formed on a surface of the SiC substrate. The SiC substrate having the Ti-layer and the Al-layer is maintained at a temperature that is higher than or equal to a first temperature and lower than a second temperature until all Ti in the Ti-layer has reacted with Al. The first temperature is the minimum temperature of a temperature zone at which the Ti reacts with the Al to form Al3Ti, and the second temperature is the minimum temperature of a temperature zone at which the Al3Ti reacts with SiC to form Ti3SiC2. As a result of this maintaining of temperature step, an Al3Ti-layer is formed on the surface of the SiC substrate. The method also comprises further heating the SiC substrate having the Al3Ti-layer to a temperature that is higher than the second temperature. As a result of this step of further heating the SiC substrate reacts with Al3Ti of the Al3Ti-layer to form a Ti3SiC2-layer on the surface of the SiC substrate.
摘要翻译： 阐述了在SiC半导体层上形成具有良好特性的欧姆电极的方法。 在该方法中，在SiC衬底的表面上形成Ti层和Al层。 具有Ti层和Al层的SiC衬底保持在高于或等于第一温度并低于第二温度的温度，直到Ti层中的所有Ti都与Al反应。 第一个温度是Ti与Al反应形成Al3Ti的温度区的最低温度，第二个温度是Al3Ti与SiC反应形成Ti3SiC2的温度区的最低温度。 由于这种维持温度步骤的结果，在SiC衬底的表面上形成Al 3 Ti层。 该方法还包括将具有Al 3 Ti层的SiC衬底进一步加热到高于第二温度的温度。 作为进一步加热的步骤的结果，SiC衬底与Al 3 Ti层的Al 3 Ti反应以在SiC衬底的表面上形成Ti 3 SiC 2层。
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公开(公告)号：US08008180B2
公开(公告)日：2011-08-30
申请号：US12530901
申请日：2008-03-13
IPC分类号： H01L21/44
CPC分类号： H01L29/7813 , H01L21/0485 , H01L29/1608 , H01L29/41766 , H01L29/45 , H01L29/732 , Y10S438/931
摘要： A method of forming an Ohmic contact on a P-type 4H—SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H—SiC substrate including a deposition step of successively depositing a 1 to 60 nm thick first Al layer, Ti layer, and second Al layer on a P-type 4H—SiC substrate and an alloying step of forming an alloy layer between the SiC substrate and the Ti layer through the first Al layer by heat treatment in a nonoxidizing atmosphere. An Ohmic contact on a P-type 4H—SiC substrate formed by this method is also provided.
摘要翻译： 提供了在P型4H-SiC上形成欧姆接触的方法和由其形成的欧姆接触。 在P型4H-SiC衬底上形成欧姆接触的方法，包括在P型4H-SiC衬底上依次沉积1至60nm厚的第一Al层，Ti层和第二Al层的沉积步骤;以及 合金化步骤，通过在非氧化气氛中的热处理，通过第一Al层在SiC衬底和Ti层之间形成合金层。 还提供了通过该方法形成的P型4H-SiC衬底上的欧姆接触。
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公开(公告)号：US09024330B2
公开(公告)日：2015-05-05
申请号：US14141174
申请日：2013-12-26
CPC分类号： H01L29/47 , H01L21/0485 , H01L21/28518 , H01L29/1608 , H01L29/45 , H01L29/66068 , H01L29/78 , H01L29/7806 , H01L29/7813
摘要： A method of manufacturing a semiconductor device includes forming an ohmic electrode in a first area on one of main surfaces of a silicon carbide layer, siliciding the ohmic electrode, and forming a Schottky electrode in a second area on the one of the main surfaces of the silicon carbide layer with self alignment. The second area is exposed where the ohmic electrode is not formed.
摘要翻译： 一种制造半导体器件的方法包括：在碳化硅层的一个主表面上的第一区域中形成欧姆电极，将欧姆电极硅化，并在第二区域中形成肖特基电极 具有自对准的碳化硅层。 在没有形成欧姆电极的情况下暴露第二区域。
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