利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

9 条记录 (耗时 0.079 秒)

    Focus ring and plasma processing apparatus
    1.
    发明申请
    Focus ring and plasma processing apparatus 失效
    对焦环和等离子体处理装置

    公开(公告)号：US20070169891A1

    公开(公告)日：2007-07-26

    申请号：US10933383

    申请日：2004-09-03

    申请人： Akira Koshiishi ,  Hideaki Tanaka ,  Nobuyuki Okayama ,  Masaaki Miyagawa ,  Shunsuke Mizukami ,  Wataru Shimizu ,  Jun Hirose ,  Toshikatsu Wakaki ,  Tomonori Miwa ,  Jun Ooyabu ,  Daisuke Hayashi

    发明人： Akira Koshiishi ,  Hideaki Tanaka ,  Nobuyuki Okayama ,  Masaaki Miyagawa ,  Shunsuke Mizukami ,  Wataru Shimizu ,  Jun Hirose ,  Toshikatsu Wakaki ,  Tomonori Miwa ,  Jun Ooyabu ,  Daisuke Hayashi

    IPC分类号： C23F1/00

    CPC分类号： H01L21/68735 ,  H01J37/32642 ,  H01L21/68757

    摘要： A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.

    摘要翻译： 提供了一种聚焦环和等离子体处理装置，其能够改善表面的表面均匀性并减少与常规情况相比在半导体晶片的周边部分的背面上沉积的情况。 安装在真空室中的是用于在其上安装半导体晶片的基座，并且安装聚焦环以围绕安装在基座上的半导体晶片。 聚焦环包括由电介质制成的环形下部构件和由导电材料制成并安装在下部构件上的环形上部构件。 上部构件包括平坦部，该平坦部是具有位于比半导体晶片W的待加工表面高的顶面的外周部，以及作为向内倾斜的内周部的倾斜部。

    Substrate processing apparatus and focus ring
    3.
    发明授权
    Substrate processing apparatus and focus ring 有权
    基板加工设备和聚焦环

    公开(公告)号：US08043472B2

    公开(公告)日：2011-10-25

    申请号：US12016607

    申请日：2008-01-18

    申请人： Masaaki Miyagawa ,  Eiichi Nishimura

    发明人： Masaaki Miyagawa ,  Eiichi Nishimura

    IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

    CPC分类号： H01J37/32642 ,  H01J37/32623

    摘要： A substrate processing apparatus that can reliably improve the efficiency of heat transfer between a focus ring and a mounting stage. A housing chamber with the interior thereof evacuated houses a substrate. The substrate is mounted on a mounting stage that is disposed in the housing chamber. An annular focus ring is mounted on the mounting stage such as to surround a peripheral portion of the mounted substrate. A heat transfer film is formed on a surface of the focus ring which contacts the mounting stage by printing processing.

    摘要翻译： 一种能够可靠地提高聚焦环和安装台之间的热传递效率的基板处理装置。 其内部抽真空的容纳室容纳衬底。 基板安装在设置在壳体室中的安装台上。 环形聚焦环安装在安装台上，以便围绕安装的基板的周边部分。 在通过打印处理接触安装台的聚焦环的表面上形成传热膜。

    Method for improving heat transfer of a focus ring to a target substrate mounting device
    5.
    发明授权
    Method for improving heat transfer of a focus ring to a target substrate mounting device 有权
    用于改善聚焦环向目标基板安装装置的传热的方法

    公开(公告)号：US07655579B2

    公开(公告)日：2010-02-02

    申请号：US11970612

    申请日：2008-01-08

    申请人： Masaaki Miyagawa ,  Akihiro Yoshimura

    发明人： Masaaki Miyagawa ,  Akihiro Yoshimura

    IPC分类号： H01L21/00

    CPC分类号： H01L21/6831 ,  H01L21/67103

    摘要： A focus ring heat transfer method improves heat transfer of a focus ring arranged in an outer peripheral portion of a mounting surface of a mounting table adapted to mount a target substrate in a chamber. The method includes steps of: disposing a heat transfer sheet between the focus ring and the mounting table; and vacuum-evacuating the chamber prior to processing the target substrate and then restoring the pressure the inside of the chamber to an atmospheric pressure or a light vacuum pressure. Therefore, air present in a fine gap between the heat transfer sheet and the mounting surface is removed to allow the heat transfer sheet to adhere to the mounting surface.

    摘要翻译： 聚焦环传热方法改善了布置在适于将目标基板安装在室中的安装台的安装表面的外周部分中的聚焦环的热传递。 该方法包括以下步骤：在聚焦环和安装台之间设置传热片; 并且在处理目标基板之前对腔室进行真空抽真空，然后将腔室内部的压力恢复到大气压力或轻的真空压力。 因此，除去传热片与安装面之间的微细间隙的空气，使传热片粘附在安装面上。

    Heat-transfer structure and substrate processing apparatus
    7.
    发明授权
    Heat-transfer structure and substrate processing apparatus 有权
    传热结构和基板加工装置

    公开(公告)号：US08524005B2

    公开(公告)日：2013-09-03

    申请号：US11774420

    申请日：2007-07-06

    申请人： Masaaki Miyagawa ,  Tetsuji Sato

    发明人： Masaaki Miyagawa ,  Tetsuji Sato

    IPC分类号： C23C16/44 ,  H01L21/3065

    CPC分类号： H01J37/32642 ,  H01J37/32623 ,  H01J2237/2001

    摘要： A heat-transfer structure which can keep a consumable component at a temperature of 225° C. or less during etching of a substrate. The heat-transfer structure is disposed in a chamber where plasma processing is performed on a wafer as the substrate under a reduced pressure. The heat-transfer structure is comprised of a focus ring having an exposed surface exposed to plasma, a susceptor and an electrostatic chuck that cool the consumable component, and a heat-transfer sheet interposed between the focus ring and the electrostatic chuck and made of a gel-like material. The ratio of hardness of the heat-transfer sheet expressed in Asker C to thermal conductivity of the heat-transfer sheet expressed in W/m·K is less than 20.

    摘要翻译： 一种传热结构，其可以在蚀刻基板期间将可消耗部件保持在225℃或更低的温度。 传热结构设置在作为基板的减压下进行等离子体处理的室中。 传热结构包括具有暴露于等离子体的暴露表面的聚焦环，冷却可消耗部件的基座和静电卡盘以及插入聚焦环和静电卡盘之间的热转印片，并由 凝胶状材料。 以Asker C表示的热转印片的硬度与以W / m·K表示的热转印片的导热率的比率小于20。

    FOCUS RING, SUBSTRATE MOUNTING TABLE AND PLASMA PROCESSING APPARATUS HAVING SAME
    8.
    发明申请
    FOCUS RING, SUBSTRATE MOUNTING TABLE AND PLASMA PROCESSING APPARATUS HAVING SAME 审中-公开
    聚焦环，基板安装台和等离子体加工设备

    公开(公告)号：US20100012274A1

    公开(公告)日：2010-01-21

    申请号：US12504043

    申请日：2009-07-16

    申请人： Masaaki Miyagawa ,  Katsuhiko Ono ,  Chishio Koshimizu ,  Kazuki Denpoh ,  Tatsuo Matsudo ,  Yasuhiro Hamada

    发明人： Masaaki Miyagawa ,  Katsuhiko Ono ,  Chishio Koshimizu ,  Kazuki Denpoh ,  Tatsuo Matsudo ,  Yasuhiro Hamada

    IPC分类号： C23F1/08

    CPC分类号： H01J37/32642 ,  H01J37/32623 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/68735

    摘要： A focus ring is placed on a substrate mounting table for mounting a target substrate thereon to surround the target substrate. The focus ring converges plasma on the target substrate when the target substrate is subjected to plasma processing. The focus ring is configured to create a temperature difference in its radial direction and over its full circumference during the plasma-processing of the target substrate. The focus ring also includes a radial outer region as a higher temperature region and a radial inner region as a lower temperature region. A groove is formed between the radial outer region and the radial inner region to extend over the full circumference of the focus ring.

    摘要翻译： 将聚焦环放置在基板安装台上，用于在其上安装目标基板以围绕目标基板。 当目标衬底进行等离子体处理时，聚焦环会将等离子体收敛在目标衬底上。 聚焦环被配置成在靶基质的等离子体处理期间在其径向方向和其整个圆周上产生温度差。 聚焦环还包括作为较高温度区域的径向外部区域和作为较低温度区域的径向内部区域。 在径向外部区域和径向内部区域之间形成凹槽以在聚焦环的整个圆周上延伸。

    HEAT-TRANSFER STRUCTURE AND SUBSTRATE PROCESSING APPARATUS
    9.
    发明申请
    HEAT-TRANSFER STRUCTURE AND SUBSTRATE PROCESSING APPARATUS 有权
    传热结构和基板加工设备

    公开(公告)号：US20080006207A1

    公开(公告)日：2008-01-10

    申请号：US11774420

    申请日：2007-07-06

    申请人： Masaaki Miyagawa ,  Tetsuji Sato

    发明人： Masaaki Miyagawa ,  Tetsuji Sato

    IPC分类号： C23C4/00 ,  C23C16/44 ,  F28D21/00

    CPC分类号： H01J37/32642 ,  H01J37/32623 ,  H01J2237/2001

    摘要： A heat-transfer structure which can keep a consumable component at a temperature of 225° C. or less during etching of a substrate. The heat-transfer structure is disposed in a chamber where plasma processing is performed on a wafer as the substrate under a reduced pressure. The heat-transfer structure is comprised of a focus ring having an exposed surface exposed to plasma, a susceptor and an electrostatic chuck that cool the consumable component, and a heat-transfer sheet interposed between the focus ring and the electrostatic chuck and made of a gel-like material. The ratio of hardness of the heat-transfer sheet expressed in Asker C to thermal conductivity of the heat-transfer sheet expressed in W/m·K is less than 20.

    摘要翻译： 一种传热结构，其可以在蚀刻基板期间将可消耗部件保持在225℃或更低的温度。 传热结构设置在作为基板的减压下进行等离子体处理的室中。 传热结构包括具有暴露于等离子体的暴露表面的聚焦环，冷却可消耗部件的基座和静电卡盘以及插入在聚焦环和静电卡盘之间的热转印片，并由 凝胶状材料。 以Asker C表示的热转印片的硬度与以W / m·K表示的热转印片的导热率的比例小于20。