Apparatus for automatic semi-batch sheet treatment of semiconductor
wafers by plasma reaction
    1.
    发明授权
    Apparatus for automatic semi-batch sheet treatment of semiconductor wafers by plasma reaction 失效
    用于通过等离子体反应自动半批片处理半导体晶片的装置

    公开(公告)号:US4336438A

    公开(公告)日:1982-06-22

    申请号:US187748

    申请日:1980-09-16

    CPC分类号: H01L21/67778 H01L21/67706

    摘要: An apparatus for automatic semi-batch sheet treatment of wafers such as high-purity silicon semiconductor wafers by plasma reaction is disclosed. The apparatus comprises a wafer carrying mechanism, a reaction chamber with an opening at the bottom, a wafer table disposed beneath the opening and provided with a sub-table for mounting the wafer, and control devices for driving the above elements in linkage motion. The wafer carrying mechanism is substantially composed of a conveyor for carrying a wafer to be treated, a pair of open-close type wafer carrying wire conveyors which are spaced in parallel at a certain distance and open and close in linkage motion so that the wafer table may pass vertically therethrough to be fixed vacuum-tightly to the reaction chamber, a mechanism for opening and closing the wire conveyors and a treated wafer carrying conveyor. The subtable is vertically movable and capable of passing the wire conveyors when closed.

    摘要翻译: 公开了一种用于通过等离子体反应对诸如高纯度硅半导体晶片的晶片进行自动半批片处理的设备。 该装置包括晶片承载机构,在底部具有开口的反应室,设置在开口下方并设置有用于安装晶片的子台的晶片台,以及用于以联动方式驱动上述元件的控制装置。 晶片承载机构基本上由用于承载要处理的晶片的输送机构成,一对开闭型晶片承载线输送机,它们以一定的距离并联连接并以联动的方式打开和关闭,使晶片台 可以垂直地穿过其,以真空密封地固定到反应室,用于打开和关闭线输送机的机构和经处理的晶片承载输送机。 子桌子是可垂直移动的,并且能够在关闭时通过电线输送机。

    Automatic apparatus for continuous treatment of leaf materials with gas
plasma
    2.
    发明授权
    Automatic apparatus for continuous treatment of leaf materials with gas plasma 失效
    用气体等离子体连续处理叶片材料的自动装置

    公开(公告)号:US4483651A

    公开(公告)日:1984-11-20

    申请号:US292417

    申请日:1981-08-13

    摘要: The invention provides a novel automatic apparatus for the continuous treatment of wafer materials, e.g. of silicon semiconductor, with gas plasma provided with a plural number of the gas plasma reaction chambers, transfer devices for bringing the wafer materials into and out of each of the reaction chambers and automatic control mechanism for controlling the individual parts of the apparatus in linkage operation. The transfer devices are composed of a main transfer conveyor extending in parallel with the array of the reaction chambers and over whole length of the array, a plural number of branched transfer conveyors each connecting one of the reaction chambers with the main transfer conveyor, a mechanism for transferring the wafer between the main transfer conveyor and one of the branched transfer conveyor and a mechanism for bringing the wafer material from the branched transfer conveyor to the gas plasma reaction chamber or vice versa. Transferring and gas plasma treatment of the wafer materials can be performed in continuous and successive linkage operations by virtue of the automatic control mechanism. The inventive apparatus is very advantageous in the continuous and concurrent handling of a plural number of wafer materials in the process of the gas plasma treatment so that excellent productivity of the process and highly uniform quality of the treated wafer materials are ensured.

    摘要翻译: 本发明提供了一种用于连续处理晶片材料的新型自动装置,例如, 的硅半导体,其中具有多个气体等离子体反应室的气体等离子体,用于将晶片材料进出每个反应室的转移装置和用于在联动操作中控制装置的各个部件的自动控制机构 。 传送装置由与反应室的阵列平行延伸并且在整个长度上的主传送输送机组成,多个分支传送输送机将每个反应室中的一个连接到主传送输送机,一个机构 用于在主传送输送机和分支传送输送机之一之间传送晶片,以及用于将晶片材料从分支转移输送器引入气体等离子体反应室的机构,反之亦然。 可以通过自动控制机构在连续和连续的连动操作中进行晶片材料的转移和气体等离子体处理。 本发明的装置在气体等离子体处理过程中连续和同时处理多个晶片材料是非常有利的,因此确保了处理的优异的生产率和经过处理的晶片材料的高度均匀的质量。