公开(公告)号：US20050185159A1

公开(公告)日：2005-08-25

申请号：US10783938

申请日：2004-02-20

申请人： Alan Rosenbluth ,  Gregg Gallatin ,  Ronald Gordon ,  Nakgeuon Seong ,  Alexey Lvov ,  William Hinsberg ,  John Hoffnagle ,  Frances Houle ,  Martha Sanchez

发明人： Alan Rosenbluth ,  Gregg Gallatin ,  Ronald Gordon ,  Nakgeuon Seong ,  Alexey Lvov ,  William Hinsberg ,  John Hoffnagle ,  Frances Houle ,  Martha Sanchez

IPC分类号： G03F1/08 ,  G03B27/54 ,  G03F7/20

CPC分类号： G03F7/705 ,  G03F1/36 ,  G03F7/70441

摘要： An efficient method and system is provided for computing lithographic images that takes into account vector effects such as lens birefringence, resist stack effects and tailored source polarizations, and may also include blur effects of the mask and the resist. These effects are included by forming a generalized bilinear kernel, which is independent of the mask transmission function, which can then be treated using a decomposition to allow rapid computation of an image that includes such non-scalar effects. Dominant eigenfunctions of the generalized bilinear kernel can be used to pre-compute convolutions with possible polygon sectors. A mask transmission function can then be decomposed into polygon sectors, and weighted pre-images may be formed from a coherent sum of the pre-computed convolutions for the appropriate mask polygon sectors. The image at a point may be formed from the incoherent sum of the weighted pre-images over all of the dominant eigenfunctions of the generalized bilinear kernel. The resulting image can then be used to perform model-based optical proximity correction (MBOPC).

摘要翻译： 提供了一种有效的方法和系统，用于计算光学图像，其考虑了诸如透镜双折射，抗蚀剂堆叠效应和定制的源极化的矢量效应，并且还可以包括掩模和抗蚀剂的模糊效果。 这些效果包括通过形成广义双线性核，其独立于掩模传递函数，其然后可以使用分解来处理，以允许快速计算包括这种非标量效应的图像。 广义双线性核的主要特征函数可用于预先计算可能的多边形扇区的卷积。 然后，掩模传输功能可以被分解成多边形扇区，并且加权预图像可以由针对适当的屏蔽多边形扇区的预先计算的卷积的相干和形成。 一点上的图像可以由广义双线性核的所有主要特征函数上的加权预图像的非相干和形成。 然后，所得到的图像可用于执行基于模型的光学邻近校正（MBOPC）。

公开(公告)号：US20060126053A1

公开(公告)日：2006-06-15

申请号：US11351578

申请日：2006-02-09

申请人： William Hinsberg ,  John Hoffnagle ,  Frances Houle ,  Martha Sanchez

发明人： William Hinsberg ,  John Hoffnagle ,  Frances Houle ,  Martha Sanchez

IPC分类号： G03B27/62

CPC分类号： G03F7/70108 ,  G03F7/70608 ,  Y10S430/143

摘要： An optical apparatus used for the efficient characterization of photoresist material includes at least one grating interferometer having at least two gratings that together define an optical recombination plane. An optical stop blocks any zeroth order beam from propagating through the apparatus. A reticle positioned at the recombination plane has at least one fiducial marking therein. A lithographic imaging optical tool is positioned so that its input optical plane is substantially coincident with the optical recombination plane and its output imaging plane is substantially coincident with photoresist on a wafer. The apparatus writes in the photoresist latent, sinusoidal grating patterns, preferably of different spatial frequencies, as well as at least one fiducial mark whose pattern is determined by the marking in the reticle. After the photoresist is developed, its intrinsic spatial resolution may be determined by automated means.

公开(公告)号：US20050168717A1

公开(公告)日：2005-08-04

申请号：US10769132

申请日：2004-01-29

申请人： William Hinsberg ,  John Hoffnagle ,  Frances Houle ,  Martha Sanchez

发明人： William Hinsberg ,  John Hoffnagle ,  Frances Houle ,  Martha Sanchez

IPC分类号： G03F7/20 ,  G03B27/72

CPC分类号： G03F7/70108 ,  G03F7/70608 ,  Y10S430/143

摘要： An optical apparatus used for the efficient characterization of photoresist material includes at least one grating interferometer having at least two gratings that together define an optical recombination plane. An optical stop blocks any zeroth order beam from propagating through the apparatus. A reticle positioned at the recombination plane has at least one fiducial marking therein. A lithographic imaging optical tool is positioned so that its input optical plane is substantially coincident with the optical recombination plane and its output imaging plane is substantially coincident with photoresist on a wafer. The apparatus writes in the photoresist latent, sinusoidal grating patterns, preferably of different spatial frequencies, as well as at least one fiducial mark whose pattern is determined by the marking in the reticle. After the photoresist is developed, its intrinsic spatial resolution may be determined by automated means.

摘要翻译： 用于光致抗蚀剂材料的有效表征的光学装置包括至少一个具有至少两个光栅的光栅干涉仪，其一起限定光学复合平面。 光学阻挡块阻止任何零级光束传播通过设备。 位于复合平面处的掩模版在其中具有至少一个基准标记。 光刻成像光学工具被定位成使得其输入光学平面与光学复合平面基本一致，并且其输出成像平面与晶片上的光致抗蚀剂基本一致。 该装置写入光阻潜在正弦光栅图案，优选地具有不同的空间频率，以及至少一个基准标记，其图案由标线中的标记确定。 在光致抗蚀剂显影之后，其​​固有空间分辨率可以通过自动化方式确定。

公开(公告)号：US20060275704A1

公开(公告)日：2006-12-07

申请号：US11145288

申请日：2005-06-03

申请人： William Hinsberg

发明人： William Hinsberg

IPC分类号： G03C1/00

CPC分类号： G03F7/2041 ,  G03F7/11 ,  Y10S430/136 ,  Y10S430/162

摘要： A method of forming a top coat layer and a topcoat material for use in immersion lithography. A topcoat layer is formed on a photoresist layer from an aqueous solution that is immiscible with the photoresist layer. The topcoat layer is then rendered insoluble in neutral water but remains soluble in aqueous-base developer solutions so the photoresist may be exposed in a immersion lithographic system using water as the immersion fluid, but is removed during photoresist development. The topcoat materials are suitable for use with positive, negative, dual tone and chemically amplified (CA) photoresist.

摘要翻译： 一种形成用于浸渍光刻的顶涂层和顶涂层材料的方法。 从与光致抗蚀剂层不混溶的水溶液在光致抗蚀剂层上形成面漆层。 然后将面漆层变得不溶于中性水，但仍溶于水性显影剂溶液中，因此光致抗蚀剂可以使用水作为浸渍流体在浸没式光刻系统中曝光，但在光致抗蚀剂显影期间被除去。 面漆材料适用于正，负，双色和化学放大（CA）光致抗蚀剂。

公开(公告)号：US20080026330A1

公开(公告)日：2008-01-31

申请号：US11868320

申请日：2007-10-05

申请人： Robert Allen ,  Phillip Brock ,  Dario Gil ,  William Hinsberg ,  Carl Larson ,  Linda Sundberg ,  Gregory Wallraff

发明人： Robert Allen ,  Phillip Brock ,  Dario Gil ,  William Hinsberg ,  Carl Larson ,  Linda Sundberg ,  Gregory Wallraff

IPC分类号： G03C5/00 ,  C08F20/06

CPC分类号： G03F7/11 ,  G03F7/0046 ,  G03F7/2041 ,  Y10S430/108 ,  Y10S430/111

摘要： A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 Å/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

摘要翻译： 公开了一种用于施加在光致抗蚀剂材料上的面漆材料。 面漆材料包含至少一种溶剂和在含水碱性显影剂中具有至少3000 /秒的溶解速率的聚合物。 聚合物含有包含以下两种结构之一的六氟醇单体单元：其中n是整数。 面漆材料可以用于光刻工艺中，其中将顶涂层材料施加在光致抗蚀剂层上。 面漆材料优选不溶于水，因此特别适用于使用水作为成像介质的浸渍光刻技术。

公开(公告)号：US20060188804A1

公开(公告)日：2006-08-24

申请号：US11063940

申请日：2005-02-23

申请人： Robert Allen ,  Phillip Brock ,  Dario Gil ,  William Hinsberg ,  Carl Larson ,  Linda Sundberg ,  Gregory Wallraff

发明人： Robert Allen ,  Phillip Brock ,  Dario Gil ,  William Hinsberg ,  Carl Larson ,  Linda Sundberg ,  Gregory Wallraff

IPC分类号： G03C1/76

CPC分类号： G03F7/11 ,  G03F7/0046 ,  G03F7/2041 ,  Y10S430/108 ,  Y10S430/111

摘要： A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 Å/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

摘要翻译： 公开了一种用于施加在光致抗蚀剂材料上的面漆材料。 面漆材料包含至少一种溶剂和在含水碱性显影剂中具有至少3000 /秒的溶解速率的聚合物。 聚合物含有包含以下两种结构之一的六氟醇单体单元：其中n是整数。 面漆材料可以用于光刻工艺中，其中将顶涂层材料施加在光致抗蚀剂层上。 面漆材料优选不溶于水，因此特别适用于使用水作为成像介质的浸渍光刻技术。

公开(公告)号：US20080118866A1

公开(公告)日：2008-05-22

申请号：US12024829

申请日：2008-02-01

申请人： Gregory Breyta ,  Mark Hart ,  William Hinsberg ,  Alfred Renaldo

发明人： Gregory Breyta ,  Mark Hart ,  William Hinsberg ,  Alfred Renaldo

IPC分类号： G11B5/33 ,  G03F5/00

CPC分类号： G11B5/3163 ,  G03F7/091 ,  G11B5/3116 ,  Y10T428/11

摘要： A tunable dielectric antireflective layer for use in photolithographic applications, and specifically, for use in an image transfer processing. The tunable dielectric antireflective layer provides a spin-on-glass (SOG) material that can act as both a hardmask and a deep UV antireflective layer (BARC). One such material is titanium oxide generated by spin-coating a titanium alkanate and curing the film by heat or electron beam. The material can be “tuned” to match index of refraction (n) with the index of refraction for the photoresist and also maintain a high absorbency value, k, at a specified wavelength. A unique character of the tunable dielectric antireflective layer is that the BARC/hardmask layer allows image transfer with deep ultraviolet photoresist.

摘要翻译： 一种用于光刻应用的可调谐介电抗反射层，具体地用于图像转印处理。 可调电介质抗反射层提供可用作硬掩模和深UV抗反射层（BARC）的旋涂玻璃（SOG）材料。 一种这样的材料是通过旋涂钛基烷烃并通过热或电子束固化膜产生的氧化钛。 可以将材料“调谐”以使折射率（n）与光致抗蚀剂的折射率匹配，并且在特定波长下还保持高的吸收值k。 可调电介质抗反射层的独特特征是BARC /硬掩模层允许使用深紫外光致抗蚀剂进行图像转印。

公开(公告)号：US20070128543A1

公开(公告)日：2007-06-07

申请号：US11621132

申请日：2007-01-09

申请人： William Hinsberg

发明人： William Hinsberg

IPC分类号： G03C1/00

CPC分类号： G03F7/2041 ,  G03F7/11 ,  Y10S430/136 ,  Y10S430/162

摘要： A method of forming a top coat layer and a topcoat material for use in immersion lithography. A topcoat layer is formed on a photoresist layer from an aqueous solution that is immiscible with the photoresist layer. The topcoat layer is then rendered insoluble in neutral water but remains soluble in aqueous-base developer solutions so the photoresist may be exposed in a immersion lithographic system using water as the immersion fluid, but is removed during photoresist development. The topcoat materials are suitable for use with positive, negative, dual tone and chemically amplified (CA) photoresist.

摘要翻译： 一种形成用于浸渍光刻的顶涂层和顶涂层材料的方法。 从与光致抗蚀剂层不混溶的水溶液在光致抗蚀剂层上形成面漆层。 然后将面漆层变得不溶于中性水，但仍溶于水性显影剂溶液中，因此光致抗蚀剂可以使用水作为浸渍流体在浸没式光刻系统中曝光，但在光致抗蚀剂显影期间被除去。 面漆材料适用于正，负，双色和化学放大（CA）光致抗蚀剂。