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9 条记录 (耗时 0.049 秒)

    Glove box filter system
    2.
    发明授权
    Glove box filter system 有权
    手套箱式过滤系统

    公开(公告)号：US06235072B1

    公开(公告)日：2001-05-22

    申请号：US09382611

    申请日：1999-08-25

    申请人： Nonna Kopylov ,  Ahmet Refik Kortan

    发明人： Nonna Kopylov ,  Ahmet Refik Kortan

    IPC分类号： B01D4600

    CPC分类号： B01D46/0023 ,  B01D46/0058 ,  B01D2267/40 ,  B08B15/026 ,  B25J21/02 ,  Y10S55/18

    摘要： A glove box filter system for filtering out particles from a glove box environment defined in a glove box having an outlet and an inlet. The filter system includes a first filter stage for receiving removed gas from the glove box environment. The first filter stage contains a chamber having a first filter through which the removed gas passes for filtering out particles contained in the removed gas. The filtered gas is provided to a circulation conduit connected to a blower for providing movement of the gas through the glove box environment. A second filter stage connected to the glove box inlet is provided for fine-filtering the gas passed by the first filter stage prior to the return of the gas to the glove box environment. The first filter stage is connected to the glove box environment through one or more valves which isolate the first filter stage from the glove box environment when replacement of a first filter contained in the first filter stage occurs. A purging conduit is also provided for purging the first filter stage chamber of particles during replacement of the first filter.

    摘要翻译： 一种手套箱式过滤系统，用于从手套箱中定义的具有出口和入口的手套箱中过滤颗粒。 过滤器系统包括用于从手套箱环境接收去除的气体的第一过滤器台。 第一过滤段包含具有第一过滤器的室，除去的气体通过该第一过滤器，以过滤除去的气体中所含的颗粒。 过滤的气体被提供到连接到鼓风机的循环管道，用于提供气体通过手套箱环境的运动。 提供连接到手套箱入口的第二过滤器台，用于在将气体返回到手套箱环境之前对通过第一过滤器阶段的气体进行精细过滤。 第一过滤器级通过一个或多个阀连接到手套箱环境，当更换包含在第一过滤器阶段中的第一过滤器时，隔离第一过滤器阶段与手套箱环境。 还提供清洗管道，用于在更换第一过滤器期间净化颗粒的第一过滤器阶段室。

    Manufacture of fluoride glass fibers with phosphate coatings
    5.
    发明授权
    Manufacture of fluoride glass fibers with phosphate coatings 失效
    氟化物玻璃纤维与磷酸盐涂层的制造

    公开(公告)号：US5858052A

    公开(公告)日：1999-01-12

    申请号：US934375

    申请日：1997-09-19

    申请人： Nonna Kopylov ,  Ahmet Refik Kortan

    发明人： Nonna Kopylov ,  Ahmet Refik Kortan

    IPC分类号： C03B37/012 ,  C03C25/10 ,  C03C17/00 ,  C03C25/02 ,  C03B9/00 ,  C03B11/00

    CPC分类号： C03B37/01265 ,  C03C25/107 ,  Y10S501/904

    摘要： The specification describes a method for the manufacture of fluoride glass optical fibers which are covered with a protective coating of phosphate glass. The coating is produced by dipping the fluoride glass preform in a phosphate glass melt prior to drawing the optical fiber. The fluoride glass is ZBLAN. The phosphate glass has a glass transition temperature below 200.degree. C., which allows the dipping step to be carried out at a relatively low temperature where the preform temperature is maintained well below the crystallization temperature of the fluoride glass, and also where the viscosity of the fluoride glass preform is substantially higher than the viscosity of the phosphate glass coating material.

    摘要翻译： 该说明书描述了用磷酸盐玻璃的保护涂层覆盖的氟化物玻璃光纤的制造方法。 通过在拉制光纤之前将氟化物玻璃预制件浸入磷酸盐玻璃熔体中来制备涂层。 氟化玻璃是ZBLAN。 磷酸盐玻璃的玻璃化转变温度低于200℃，这允许浸渍步骤在相对低的温度下进行，其中预成型体温度保持在低于氟化物玻璃的结晶温度，并且其中粘度 氟化物玻璃预制件基本上高于磷酸盐玻璃涂层材料的粘度。

    Article comprising an oxide layer on a GaAs or GaN-based semiconductor body
    6.
    发明授权
    Article comprising an oxide layer on a GaAs or GaN-based semiconductor body 有权
    本文包括在GaAs或GaN基半导体本体上的氧化物层

    公开(公告)号：US06469357B1

    公开(公告)日：2002-10-22

    申请号：US09190193

    申请日：1998-11-12

    申请人： Minghwei Hong ,  Ahmet Refik Kortan ,  Jueinai Raynien Kwo ,  Joseph Petrus Mannaerts

    发明人： Minghwei Hong ,  Ahmet Refik Kortan ,  Jueinai Raynien Kwo ,  Joseph Petrus Mannaerts

    IPC分类号： H01L2976

    CPC分类号： H01L29/517 ,  C23C14/08 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/31604 ,  H01L33/44 ,  H01S5/028

    摘要： We have found that a single crystal, single domain oxide layer of thickness less than 5 nm can be grown on a (100) oriented GaAs-based semiconductor substrate. Similar epitaxial oxide can be grown on GaN and GaN-based semiconductors. The oxide typically is a rare earth oxide of the Mn2 0 3 structure (e.g., Gd2O3). The oxide/semiconductor interface can be of high quality, with low interface state density, and the oxide layer can have low leakage current and high breakdown voltage. The low thickness and high dielectric constant of the oxide layer result in a MOS structure of high capacitance per unit area. Such a structure advantageously forms a GaAs-based MOS-FET.

    摘要翻译： 我们已经发现，在（100）定向的GaAs基半导体衬底上可以生长厚度小于5nm的单晶单畴氧化物层。 可以在GaN和GaN基半导体上生长类似的外延氧化物。 氧化物通常是Mn 2 O 3结构的稀土氧化物（例如，Gd 2 O 3）。 氧化物/半导体界面可以具有高质量，低界面状态密度，并且氧化物层可以具有低漏电流和高击穿电压。 氧化物层的低厚度和高介电常数导致每单位面积的高电容的MOS结构。 这种结构有利地形成基于GaAs的MOS-FET。

    High dielectric constant gate oxides for silicon-based devices
    7.
    发明授权
    High dielectric constant gate oxides for silicon-based devices 有权
    用于硅基器件的高介电常数栅极氧化物

    公开(公告)号：US06404027B1

    公开(公告)日：2002-06-11

    申请号：US09499411

    申请日：2000-02-07

    申请人： Minghwei Hong ,  Ahmet Refik Kortan ,  Jueinai Raynien Kwo ,  Joseph Petrus Mannaerts

    发明人： Minghwei Hong ,  Ahmet Refik Kortan ,  Jueinai Raynien Kwo ,  Joseph Petrus Mannaerts

    IPC分类号： H01L2976

    CPC分类号： H01L21/28185 ,  H01L21/02192 ,  H01L21/02293 ,  H01L21/28194 ,  H01L21/28238 ,  H01L21/31604 ,  H01L29/045 ,  H01L29/517

    摘要： A high dielectric rare earth oxide of the form Mn2O3 (such as, for example, Gd2O3 or Y2O3) is grown on a clean silicon (100) substrate surface under an oxygen partial pressure less than or equal to 10−7 torr to form an acceptable gate oxide (in terms of dielectric constant (∈˜18) and thickness) that eliminates the tunneling current present in ultra-thin conventional SiO2 dielectrics and avoids the formation of a native oxide layer at the interface between the silicon substrate and the dielectric. Epitaxial films can be grown on vicinal silicon substrates and amorphous films on regular silicon substrates to form the high dielectric gate oxide.

    摘要翻译： 在氧分压小于或等于10 -7乇的条件下，在干净的硅（100）衬底表面上生长Mn2O3（例如，Gd 2 O 3或Y 2 O 3）形式的高电介质稀土氧化物以形成可接受的 栅极氧化物（以介电常数（ε〜18）和厚度计），其消除了超薄常规SiO 2电介质中存在的隧道电流，并避免在硅衬底和电介质之间的界面处形成自然氧化物层。 外延膜可以在邻硅衬底上和在常规硅衬底上的非晶膜上生长以形成高电介质栅极氧化物。