公开(公告)号：US20090321735A1

公开(公告)日：2009-12-31

申请号：US12555241

申请日：2009-09-08

申请人： Alberto Cestero ,  Byeongju Park ,  John M. Safran

发明人： Alberto Cestero ,  Byeongju Park ,  John M. Safran

IPC分类号： H01L23/525 ,  H01L21/768

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

摘要： An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode and anode are preferably shaped to control regions from which and to which material is electrically migrated. After programming, additional electromigration of material can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures.

摘要翻译： 具有包括非硅化半导体材料区域的连接的反熔丝可以以降低的电压和电流进行编程，并且通过金属或硅化物从阴极电迁移到非硅化半导体材料的区域而减少产生热量，从而形成具有降低的体积电阻的合金 。 阴极和阳极优选成形为控制从哪里和哪些材料被电迁移的区域。 在编程之后，材料的额外电迁移可将反熔丝返回到高电阻状态。 反熔丝制造的过程与场效应晶体管的制造完全兼容，并且反熔丝可有利地形成在隔离结构上。

公开(公告)号：US20120129319A1

公开(公告)日：2012-05-24

申请号：US13362043

申请日：2012-01-31

申请人： Alberto Cestero ,  Byeongju Park ,  John M. Safran

发明人： Alberto Cestero ,  Byeongju Park ,  John M. Safran

IPC分类号： H01L21/326

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

摘要： An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode and anode are preferably shaped to control regions from which and to which material is electrically migrated. After programming, additional electromigration of material can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures.

摘要翻译： 具有包括非硅化半导体材料区域的连接的反熔丝可以以降低的电压和电流进行编程，并且通过金属或硅化物从阴极电迁移到非硅化半导体材料的区域来减少产生热量，从而形成具有降低的体积电阻的合金 。 阴极和阳极优选成形为控制从哪里和哪些材料电迁移的区域。 在编程之后，材料的额外电迁移可将反熔丝返回到高电阻状态。 反熔丝制造的过程与场效应晶体管的制造完全兼容，并且反熔丝可有利地形成在隔离结构上。

公开(公告)号：US07674691B2

公开(公告)日：2010-03-09

申请号：US11683068

申请日：2007-03-07

申请人： Alberto Cestero ,  Byeongju Park ,  John M. Safran

发明人： Alberto Cestero ,  Byeongju Park ,  John M. Safran

IPC分类号： H01L21/326

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

摘要： An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode and anode are preferably shaped to control regions from which and to which material is electrically migrated. After programming, additional electromigration of material can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures.

摘要翻译： 具有包括非硅化半导体材料区域的连接的反熔丝可以以降低的电压和电流进行编程，并且通过金属或硅化物从阴极电迁移到非硅化半导体材料的区域来减少产生热量，从而形成具有降低的体积电阻的合金 。 阴极和阳极优选成形为控制从哪里和哪些材料电迁移的区域。 在编程之后，材料的额外电迁移可将反熔丝返回到高电阻状态。 反熔丝制造的过程与场效应晶体管的制造完全兼容，并且反熔丝可有利地形成在隔离结构上。

公开(公告)号：US08115275B2

公开(公告)日：2012-02-14

申请号：US12555241

申请日：2009-09-08

申请人： Alberto Cestero ,  Byeongju Park ,  John M. Safran

发明人： Alberto Cestero ,  Byeongju Park ,  John M. Safran

IPC分类号： H01L21/326

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

摘要： An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode and anode are preferably shaped to control regions from which and to which material is electrically migrated. After programming, additional electromigration of material can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures.

摘要翻译： 具有包括非硅化半导体材料区域的连接的反熔丝可以以降低的电压和电流进行编程，并且通过金属或硅化物从阴极电迁移到非硅化半导体材料的区域来减少产生热量，从而形成具有降低的体积电阻的合金 。 阴极和阳极优选成形为控制从哪里和哪些材料电迁移的区域。 在编程之后，材料的额外电迁移可将反熔丝返回到高电阻状态。 反熔丝制造的过程与场效应晶体管的制造完全兼容，并且反熔丝可有利地形成在隔离结构上。

公开(公告)号：US08361887B2

公开(公告)日：2013-01-29

申请号：US13362043

申请日：2012-01-31

申请人： Alberto Cestero ,  Byeongju Park ,  John M. Safran

发明人： Alberto Cestero ,  Byeongju Park ,  John M. Safran

IPC分类号： H01L21/326

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

摘要： An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode and anode are preferably shaped to control regions from which and to which material is electrically migrated. After programming, additional electromigration of material can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures.

摘要翻译： 具有包括非硅化半导体材料区域的连接的反熔丝可以以降低的电压和电流进行编程，并且通过金属或硅化物从阴极电迁移到非硅化半导体材料的区域来减少产生热量，从而形成具有降低的体积电阻的合金 。 阴极和阳极优选成形为控制从哪里和哪些材料电迁移的区域。 在编程之后，材料的额外电迁移可将反熔丝返回到高电阻状态。 反熔丝制造的过程与场效应晶体管的制造完全兼容，并且反熔丝可有利地形成在隔离结构上。

公开(公告)号：US20080217736A1

公开(公告)日：2008-09-11

申请号：US11683068

申请日：2007-03-07

申请人： Alberto Cestero ,  Byeongju Park ,  John M. Safran

发明人： Alberto Cestero ,  Byeongju Park ,  John M. Safran

IPC分类号： H01L29/00 ,  H01L21/44 ,  H01L21/479

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

摘要： An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode and anode are preferably shaped to control regions from which and to which material is electrically migrated. After programming, additional electromigration of material can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures.

摘要翻译： 具有包括非硅化半导体材料区域的连接的反熔丝可以以降低的电压和电流进行编程，并且通过金属或硅化物从阴极电迁移到非硅化半导体材料的区域来减少产生热量，从而形成具有降低的体积电阻的合金 。 阴极和阳极优选成形为控制从哪里和哪些材料电迁移的区域。 在编程之后，材料的额外电迁移可将反熔丝返回到高电阻状态。 反熔丝制造的过程与场效应晶体管的制造完全兼容，并且反熔丝可有利地形成在隔离结构上。

公开(公告)号：US20090108400A1

公开(公告)日：2009-04-30

申请号：US11931167

申请日：2007-10-31

申请人： Alberto Cestero ,  Byeongju Park ,  John Safran

发明人： Alberto Cestero ,  Byeongju Park ,  John Safran

IPC分类号： H01L23/58 ,  H01L21/441

CPC分类号： H01L23/5252 ,  H01L23/58 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： An antifuse structure includes a sense pad contact region that is separate from an anode contact region and a cathode contact region. By including the sense pad contact region that is separate from the anode contact region and the cathode contact region, a programming current flow when programming the antifuse structure may travel a different pathway than a sense current flow when sensing the antifuse structure. In particular a sense current flow may avoid a depletion region created within the cathode contact region when programming the antifuse structure.

摘要翻译： 反熔丝结构包括与阳极接触区域和阴极接触区域分开的感测焊盘接触区域。 通过包括与阳极接触区域和阴极接触区域分开的感测焊盘接触区域，编程反熔丝结构时的编程电流将在检测反熔丝结构时传播与感测电流不同的通路。 特别地，当编程反熔丝结构时，感测电流可以避免在阴极接触区域内产生的耗尽区域。

公开(公告)号：US20080218247A1

公开(公告)日：2008-09-11

申请号：US11683081

申请日：2007-03-07

申请人： Byeongju Park ,  John M. Safran

发明人： Byeongju Park ,  John M. Safran

IPC分类号： H01H37/76

CPC分类号： G11C17/18

摘要： The present invention provides a circuit for determining the optimal gate voltage for programming transistors. The determination of the optimal voltage compensates for the variations in the programming current due to process variations in manufacturing or due to ambient conditions. By applying the optimal gate voltage thus determined to the programming transistors of electrical fuses, the optimal level of current is passed through the electrical fuses to enable high yielding and reliable electrical fuse programming.

摘要翻译： 本发明提供一种用于确定编程晶体管的最佳栅极电压的电路。 最佳电压的确定补偿了由于制造过程变化或由于环境条件而导致的编程电流的变化。 通过将如此确定的最佳栅极电压施加到电熔丝的编程晶体管，最佳电流电流通过电熔丝，以实现高屈服和可靠的电熔丝编程。

公开(公告)号：US20080217658A1

公开(公告)日：2008-09-11

申请号：US11683075

申请日：2007-03-07

申请人： Deok-kee Kim ,  Hoki Kim ,  Chandrasekharan Kothandaraman ,  Byeongju Park ,  John M. Safran

发明人： Deok-kee Kim ,  Hoki Kim ,  Chandrasekharan Kothandaraman ,  Byeongju Park ,  John M. Safran

IPC分类号： H01L27/10 ,  H01L29/00

CPC分类号： H01L27/112 ,  H01L23/5252 ,  H01L27/101 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： The present invention provides structures for antifuses that utilize electromigration for programming. By providing a portion of antifuse link with high resistance without conducting material and then by inducing electromigration of the conducting material into the antifuse link, the resistance of the antifuse structure is changed. By providing a terminal on the antifuse link, the change in the electrical properties of the antifuse link is detected and sensed. Also disclosed are an integrated antifuse with a built-in sensing device and a two dimensional array of integrated antifuses that can share programming transistors and sensing circuitry.

摘要翻译： 本发明提供了利用电迁移进行编程的反熔丝的结构。 通过在没有导电材料的情况下提供具有高电阻的一部分反熔丝连接，然后通过将导电材料电迁移到反熔丝连接中，反熔丝结构的电阻改变。 通过在反熔丝链路上设置端子，检测和感测反熔丝连接的电特性的变化。 还公开了具有内置感测装置的集成反熔丝和可共享编程晶体管和感测电路的集成反熔丝的二维阵列。

公开(公告)号：US07723820B2

公开(公告)日：2010-05-25

申请号：US11616965

申请日：2006-12-28

申请人： Deok-kee Kim ,  Byeongju Park ,  John M. Safran

发明人： Deok-kee Kim ,  Byeongju Park ,  John M. Safran

IPC分类号： H01L29/00

CPC分类号： H01L23/5252 ,  G11C17/16 ,  G11C17/18 ,  H01L27/105 ,  H01L27/112 ,  H01L27/11206 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides structures for an integrated antifuse that incorporates an integrated sensing transistor with an integrated heater. Two terminals connected to the upper plate allow the heating of the upper plate, accelerating the breakdown of the antifuse dielectric at a lower bias voltage. Part of the upper plate also serves as the gate of the integrated sensing transistor. The antifuse dielectric serves as the gate dielectric of the integrated transistor. The lower plate comprises a channel, a drain, and a source of a transistor. While intact, the integrated sensing transistor allows a passage of transistor current through the drain. When programmed, the antifuse dielectric, which is the gate of the integrated transistor, is subjected to a gate breakdown, shorting the gate to the channel and resulting in a decreased drain current. The integrated antifuse structure can also be wired in an array to provide a compact OTP memory array.

摘要翻译： 本发明提供了一种集成反熔丝的结构，该结构集成了具有集成加热器的集成感测晶体管。 连接到上板的两个端子允许上板的加热，加速在更低偏压下的反熔丝电介质的击穿。 上板的一部分也用作集成感测晶体管的栅极。 反熔丝电介质用作集成晶体管的栅极电介质。 下板包括晶体管的沟道，漏极和源极。 虽然完整，集成感测晶体管允许晶体管电流通过漏极。 当编程时，作为集成晶体管的栅极的反熔丝电介质受到栅极击穿，使栅极短路到沟道并导致漏极电流降低。 集成的反熔丝结构也可以以阵列布线，以提供紧凑的OTP存储器阵列。