DIODE AND METHOD OF MAKING THE SAME
    1.
    发明公开

    公开(公告)号:US20230299210A1

    公开(公告)日:2023-09-21

    申请号:US17855735

    申请日:2022-06-30

    IPC分类号: H01L29/861 H01L29/66

    摘要: A method of producing a four-layer silicon diode, including selecting a first silicon wafer, wherein said first silicon wafer is CZ-grown B-doped with orientation, a resistivity of less than 0.01 Ohm-cm, and an oxygen content of greater than 10 ppma, and then selecting a second silicon wafer, wherein said second silicon wafer is CZ-grown P-doped with orientation, a resistivity of less than 0.005 Ohm-cm, and an oxygen content of greater than 10 ppma, followed by cleaning the respective first and second silicon wafers. The wafers are then HF treated to yield respective first and second cleaned wafers, the first cleaned wafer is positioned into a first furnace and the second cleaned wafer is positioned into a second furnace, wherein the first and second furnaces are not unitary. Next is annealing the respective first and second cleaned wafers in a reducing atmosphere to yield respective first and second respective out-diffused gradient wafers, followed by bonding together respective first and second heat-treated wafers to yield a mated and/or bonded four-layer substrate having a first heavy doped n-type layer, a second gradient doped n-type layer, a third gradient doped p-type layer, and a fourth heavy doped p-type layer.

    Diode and method of making the same

    公开(公告)号:US12002891B2

    公开(公告)日:2024-06-04

    申请号:US17855735

    申请日:2022-06-30

    IPC分类号: H01L29/861 H01L29/66

    摘要: A method of producing a four-layer silicon diode, including selecting a first silicon wafer, wherein said first silicon wafer is CZ-grown B-doped with orientation, a resistivity of less than 0.01 Ohm-cm, and an oxygen content of greater than 10 ppma, and then selecting a second silicon wafer, wherein said second silicon wafer is CZ-grown P-doped with orientation, a resistivity of less than 0.005 Ohm-cm, and an oxygen content of greater than 10 ppma, followed by cleaning the respective first and second silicon wafers. The wafers are then HF treated to yield respective first and second cleaned wafers, the first cleaned wafer is positioned into a first furnace and the second cleaned wafer is positioned into a second furnace, wherein the first and second furnaces are not unitary. Next is annealing the respective first and second cleaned wafers in a reducing atmosphere to yield respective first and second respective out-diffused gradient wafers, followed by bonding together respective first and second heat-treated wafers to yield a mated and/or bonded four-layer substrate having a first heavy doped n-type layer, a second gradient doped n-type layer, a third gradient doped p-type layer, and a fourth heavy doped p-type layer.

    Exhaust gas aftertreatment device for an internal combustion engine
    3.
    发明申请
    Exhaust gas aftertreatment device for an internal combustion engine 有权
    内燃机废气后处理装置

    公开(公告)号:US20060117742A1

    公开(公告)日:2006-06-08

    申请号:US11003653

    申请日:2004-12-03

    IPC分类号: F01N5/04 F01N3/00 F01N3/10

    摘要: An exhaust gas aftertreatment device for an internal combustion engine comprises an inlet configured to receive the exhaust gas, an outlet from which the exhaust gas exits the device, a first passageway defined between the inlet and the outlet, and a second passageway defined between the inlet and the outlet, wherein the second passageway is separate from the first passageway. A first aftertreatment element is disposed in the first passageway. In one embodiment, the device is a diesel oxidation catalyst device and the second passageway represents a bypass passageway. The second passageway may further have a second aftertreatment element disposed therein. In an alternative embodiment, the device is a NOx aftertreatment element, and a second aftertreatment element is disposed in the second passageway. In either case, the device includes an exhaust gas flow control mechanism configured to selectively control exhaust gas flow through the first and second passageways.

    摘要翻译: 用于内燃机的废气后处理装置包括:被配置为容纳排气的入口,排气从该出口排出的出口,限定在入口和出口之间的第一通道,以及限定在入口和出口之间的第二通道 和所述出口,其中所述第二通道与所述第一通道分离。 第一后处理元件设置在第一通道中。 在一个实施例中,该装置是柴油机氧化催化剂装置,第二通道代表旁路通道。 第二通道还可以具有设置在其中的第二后处理元件。 在替代实施例中,装置是NOx后处理元件,并且第二后处理元件设置在第二通道中。 在任一种情况下,该装置包括排气流量控制机构,其构造成选择性地控制通过第一和第二通道的废气流。

    Vehicle powertrain torsional processing system
    4.
    发明申请
    Vehicle powertrain torsional processing system 有权
    车辆动力总成扭转处理系统

    公开(公告)号:US20050216145A1

    公开(公告)日:2005-09-29

    申请号:US10806716

    申请日:2004-03-23

    摘要: A system is disclosed for processing vehicle powertrain torsional information resulting from vibration of the vehicle powertrain. A speed sensor produces a speed signal indicative of rotational speed of one of the powertrain components, and a control computer is operable to determine a magnitude of an Nth-order torsional component of vehicle powertrain vibration as a function of the speed signal. The control computer is further operable to execute either of a diagnostic routine relating to the Nth-order torsional component and a control routine controlling operation of the vehicle powertrain away from conditions at which the magnitude of the Nth-order torsional component exceeds a threshold magnitude if the magnitude of the Nth-order torsional component exceeds the threshold magnitude for at least a first predefined duration.

    摘要翻译: 公开了一种用于处理由车辆动力系的振动引起的车辆动力系扭转信息的系统。 速度传感器产生指示动力系组件之一的转速的速度信号,并且控制计算机可操作以根据速度信号确定车辆动力系振动的N阶扭转分量的大小。 控制计算机还可操作来执行与N阶扭转分量相关的诊断程序中的任一个以及控制车辆动力系的操作的控制程序,其远离N阶扭转分量的大小超过阈值幅度的条件,如果 至少第一预定持续时间,N阶扭转分量的幅度超过阈值幅度。

    Engine intake air temperature management system
    5.
    发明申请
    Engine intake air temperature management system 有权
    发动机进气温度管理系统

    公开(公告)号:US20070197157A1

    公开(公告)日:2007-08-23

    申请号:US11359789

    申请日:2006-02-22

    申请人: Steven Bellinger

    发明人: Steven Bellinger

    IPC分类号: B60H1/34

    摘要: A system for managing engine intake air temperature may comprise a first air flow control device having an inlet coupled to an outlet of a turbocharger compressor and a first outlet coupled to an inlet of a charge air cooler. A second outlet is coupled via a bypass conduit to the air intake manifold. The first air flow control device may selectively control air flow from the compressor outlet to the charge air cooler and/or bypass conduit. The system may alternatively or additionally include a second air flow control device having a first inlet receiving air external to the engine compartment, a second inlet receiving air from within the engine compartment and surrounding the engine and an outlet providing air flow to the engine. The second air flow control device may selectively control air flow from the first and/or second inlets thereof to the engine.

    摘要翻译: 用于管理发动机进气温度的系统可以包括第一气流控制装置,其具有联接到涡轮增压器压缩机的出口的入口和连接到增压空气冷却器的入口的第一出口。 第二出口通过旁通管道连接到进气歧管。 第一气流控制装置可以选择性地控制从压缩机出口到增压空气冷却器和/或旁通管道的空气流。 系统可以可选地或另外包括第二气流控制装置,其具有接收发动机舱外部的空气的第一入口,第二入口从发动机舱内部接收空气并围绕发动机以及向发动机提供空气流的出口。 第二气流控制装置可以选择性地控制从其第一入口和/或第二入口到发动机的空气流。

    Apparatus, system, and method for calculating maximum back pressure
    6.
    发明申请
    Apparatus, system, and method for calculating maximum back pressure 审中-公开
    用于计算最大背压的装置,系统和方法

    公开(公告)号:US20070135968A1

    公开(公告)日:2007-06-14

    申请号:US11301701

    申请日:2005-12-13

    IPC分类号: G05B21/00

    摘要: An apparatus, system, and method are disclosed for calculating a maximum back pressure for a particulate filter. An identification module identifies a target pressure function for an air flow and a pressure of the filter. A projection module projects a high air flow for the target pressure function. A calculation module calculates a maximum back pressure from the target pressure function for the high air flow. In addition, a test module may regenerate the filter if the if the maximum back pressure exceeds a pressure threshold. In one embodiment, the pressure threshold is a specified back pressure limit wherein the specified back pressure limit is the greatest filter back pressure an engine can tolerate while delivering rated power.

    摘要翻译: 公开了一种用于计算微粒过滤器的最大背压的装置,系统和方法。 识别模块识别空气流的目标压力函数和过滤器的压力。 投影模块为目标压力功能投射高气流。 计算模块从高气流的目标压力函数计算最大背压。 此外,如果最大背压超过压力阈值,测试模块可以重新生成过滤器。 在一个实施例中,压力阈值是指定的背压限制,其中指定的背压限制是发动机在传递额定功率的同时能够容忍的最大过滤背压。