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    Method of producing a semiconductor surface covered with fluorine
    3.
    发明授权
    Method of producing a semiconductor surface covered with fluorine 有权
    制造被氟覆盖的半导体表面的方法

    公开(公告)号：US06566271B1

    公开(公告)日：2003-05-20

    申请号：US09671827

    申请日：2000-09-27

    申请人： Alexander Gschwandtner ,  Gudrun Innertsberger ,  Andreas Grassl ,  Barbara Fröschle ,  Martin Kerber ,  Alexander Mattheus

    发明人： Alexander Gschwandtner ,  Gudrun Innertsberger ,  Andreas Grassl ,  Barbara Fröschle ,  Martin Kerber ,  Alexander Mattheus

    IPC分类号： H01L21302

    CPC分类号： H01L21/02046 ,  H01L21/306

    摘要： Fluorine is deposited on a semiconductor substrate surface according to a novel process. A semiconductor substrate is placed in a reaction chamber and the substrate surface is wetted with water and/or alcohol. A compound containing fluorine is led to the substrate surface, so that a cleaned semiconductor surface covered with fluorine is produced, and the compound containing fluorine is removed from the reaction chamber. The cleaned semiconductor surface covered with fluorine is then wetted with a mixture containing at least 10% by volume of water and at least 10% by volume of alcohol, for producing a cleaned semiconductor surface covered with a predetermined amount of fluorine. The predetermined amount of fluorine is lower the higher a proportion of water in the mixture is chosen to be. Then, the water and the alcohol are removed from the semiconductor surface.

    摘要翻译： 根据新颖的方法将氟沉积在半导体衬底表面上。 将半导体衬底放置在反应室中，并用水和/或醇润湿衬底表面。 含有氟的化合物被引导到基板表面，从而产生被氟覆盖的清洁的半导体表面，并且从反应室中除去含氟化合物。 然后用含有至少10体积％水和至少10体积％醇的混合物润湿被氟覆盖的清洁的半导体表面，以产生用预定量的氟覆盖的清洁的半导体表面。 选择混合物中水的比例越高，预定量的氟越低。 然后，从半导体表面除去水和醇。