摘要:
The capabilities of the Modulated Optical Reflectance (MOR) technology in dopant metrology applications are combined with the sensitivity of the PhotoReflectance (PR) method in the present system to provide stress and other measurements in semiconductor samples. Such combination enhances the measurement performance of MOR based systems in ion implant applications (implantation dose and energy) and expands system capabilities into a new area of structural parameters measurements, for example, strain in silicon wafers.
摘要:
Samples subject to ion implantation are measured using a modulated optical reflectance system and the results of the measurements are compared to specification ranges for acceptable samples and a plurality of parametric ranges. Each parametric range is associated with a different known type of implantation fault. Measurement results outside of the specification range may be characterized by fault type by comparing the measurement results to a plurality of parametric ranges. In this way, a fault type may be quickly identified and the corresponding source of the fault may be corrected.
摘要:
An apparatus for illuminating a target surface, the apparatus having a plurality of LED arrays, where each of the arrays has a plurality of individually addressable LEDs, and where at least one of the arrays is disposed at an angle of between about forty-five degrees and about ninety degrees relative to the target surface, where all of the arrays supply light into a light pipe, the light pipe having interior walls made of a reflective material, where light exiting the light pipe illuminates the target surface, and a controller for adjusting an intensity of the individually addressable light sources.
摘要:
A modulated reflectance measurement system includes three monochromatic diode-based lasers. Each laser can operate as a probe beam or as a pump beam source. The laser outputs are redirected using a series of mirrors and beam splitters to reach an objective lens. The objective lens focuses the laser outputs on a sample. Reflected energy returns through objective and is redirected by a beam splitter to a detector. A lock-in amplifier converts the output of the detector to produce quadrature (Q) and in-phase (I) signals for analysis. A Processor uses the Q and/or I signals to analyze the sample. By changing the number of lasers used as pump or probe beam sources, the measurement system can be optimized to measure a range of different samples types.
摘要:
Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.
摘要:
A modulated reflectance measurement system includes three monochromatic diode-based lasers. Each laser can operate as a probe beam or as a pump beam source. The laser outputs are redirected using a series of mirrors and beam splitters to reach an objective lens. The objective lens focuses the laser outputs on a sample. Reflected energy returns through objective and is redirected by a beam splitter to a detector. A lock-in amplifier converts the output of the detector to produce quadrature (Q) and in-phase (I) signals for analysis. A Processor uses the Q and/or I signals to analyze the sample. By changing the number of lasers used as pump or probe beam sources, the measurement system can be optimized to measure a range of different samples types.
摘要:
A modulated reflectance measurement system includes three monochromatic diode-based lasers. Each laser can operate as a probe beam or as a pump beam source. The laser outputs are redirected using a series of mirrors and beam splitters to reach an objective lens. The objective lens focuses the laser outputs on a sample. Reflected energy returns through objective and is redirected by a beam splitter to a detector. A lock-in amplifier converts the output of the detector to produce quadrature (Q) and in-phase (I) signals for analysis. A Processor uses the Q and/or I signals to analyze the sample. By changing the number of lasers used as pump or probe beam sources, the measurement system can be optimized to measure a range of different samples types.
摘要:
A method for simultaneously monitoring ion implantation dose, damage and/or dopant depth profiles in ion-implanted semiconductors includes a calibration step where the photo-modulated reflectance of a known damage profile is identified in I-Q space. In a following measurement step, the photo-modulated reflectance of a subject is empirically measured to obtain in-phase and quadrature values. The in-phase and quadrature values are then compared, in I-Q space, to the known damage profile to characterize the damage profile of the subject.
摘要:
The repeatability of wafer uniformity measurements can be increased by taking spatially averaged measurements of wafer response. By increasing the time over which measurements are obtained, the amount of noise can be significantly reduced, thereby improving the repeatability of the measurements. These measurements can be taken at several locations on the wafer to ensure wafer uniformity. In order to get a stable and repeatable assessment of the wafer process, addressing uncertainties related to damage relaxation or incomplete anneal, an anneal decay factor (ADF) characterization can be performed at a distance away from the TW measurement boxes. From the ADF measurement and the spatially averaged measurements of wafer response, a repeatable assessment of the wafer process can be obtained.
摘要:
There is provided a metrologic methodology and instrument, useful for a high-spatial-resolution dynamic diagnostic metrology and instrument, which can provide simultaneous measurements of laser-induced frequency-domain infrared photothermal radiometry (FD-PTR) and alternating-current (ac) modulated luminescence (FD-LM) signals from defects and caries in teeth intraorally. The combination of the luminescence and radiometric frequency scan techniques for inspection of defects and caries in teeth involves irradiating the tooth with a modulated (direct-current (dc) to 100 kHz) excitation source (laser) emitting in the near-ultraviolet, visible, or near-infrared spectral range, generating blackbody Planck-radiation (infrared radiometry) and ac luminescence, and comparing the obtained (amplitude and phase) luminescence and radiometric signals to those obtained from a well characterized sample (reference) to provide the clinician with numerical information on the status of a tooth. The method and device is used to scan teeth intraorally to detect caries and classify caries or the integrity of the enamel or cementum surface, classify the health and integrity of the enamel at the base of occlusal fissures, classify the health and integrity of enamel or cementum surface of the tooth and defects around the margins of restorations, locate the presence of cracks on the enamel or cementum surface, and locate and characterize cracks in dentin on prepared teeth.