公开(公告)号：US07482253B2

公开(公告)日：2009-01-27

申请号：US11689487

申请日：2007-03-21

申请人： Alfred Pan ,  Yoocharn Jeon ,  Hou T. Ng ,  Scott Haubrich

发明人： Alfred Pan ,  Yoocharn Jeon ,  Hou T. Ng ,  Scott Haubrich

IPC分类号： H01L23/58

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L27/1292 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/78696

摘要： Crystal growth performed in situ facilitates interconnection of prefabricated nano-structures. The nano-structures are immersed in a growth solution having a controllable saturation condition. Changing the saturation condition of the solution modifies a size of the immersed nanowires. The solution includes a solute of a nano-structure precursor material. The saturation condition is changed to one or both etch material from a surface of the nano-structures and initiate crystal growth on the nano-structure surface. A nano-structure interconnection system includes the growth solution and equipment to deposit the prefabricated nano-structures on a substrate. An interconnected structure includes a plurality of nano-structures disposed on a substrate in a cluster and a liquid phase-grown crystal lattice on surfaces of the nano-structures to form physical interconnections between the plurality. An ink formulation includes the plurality of nano-structures suspended in the growth solution.

摘要翻译： 在原位进行的晶体生长促进了预制纳米结构的互连。 将纳米结构浸入具有可控饱和条件的生长溶液中。 改变溶液的饱和条件会改变浸入的纳米线的尺寸。 该溶液包括纳米结构前体材料的溶质。 饱和条件从纳米结构的表面改变为一种或两种蚀刻材料，并引发纳米结构表面上的晶体生长。 纳米结构互连系统包括生长溶液和将预制纳米结构沉积在基底上的设备。 互连结构包括布置在簇中的衬底上的多个纳米结构和在纳米结构的表面上的液相生长晶格，以形成多个之间的物理互连。 油墨配方包括悬浮在生长溶液中的多个纳米结构。

公开(公告)号：US07218004B2

公开(公告)日：2007-05-15

申请号：US11077830

申请日：2005-03-11

申请人： Alfred Pan ,  Yoocharn Jeon ,  Hou T. Ng ,  Scott Haubrich

发明人： Alfred Pan ,  Yoocharn Jeon ,  Hou T. Ng ,  Scott Haubrich

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L27/1292 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/78696

摘要： Crystal growth performed in situ facilitates interconnection of prefabricated nano-structures. The nano-structures are immersed in a growth solution having a controllable saturation condition. Changing the saturation condition of the solution modifies a size of the immersed nanowires. The solution includes a solute of a nano-structure precursor material. The saturation condition is changed to one or both etch material from a surface of the nano-structures and initiate crystal growth on the nano-structure surface. A nano-structure interconnection system includes the growth solution and equipment to deposit the prefabricated nano-structures on a substrate. An interconnected structure includes a plurality of nano-structures disposed on a substrate in a cluster and a liquid phase-grown crystal lattice on surfaces of the nano-structures to form physical interconnections between the plurality. An ink formulation includes the plurality of nano-structures suspended in the growth solution.

摘要翻译： 在原位进行的晶体生长促进了预制纳米结构的互连。 将纳米结构浸入具有可控饱和条件的生长溶液中。 改变溶液的饱和条件会改变浸入的纳米线的尺寸。 该溶液包括纳米结构前体材料的溶质。 饱和条件从纳米结构的表面改变为一种或两种蚀刻材料，并引发纳米结构表面上的晶体生长。 纳米结构互连系统包括生长溶液和将预制纳米结构沉积在基底上的设备。 互连结构包括布置在簇中的衬底上的多个纳米结构和在纳米结构的表面上的液相生长晶格，以形成多个之间的物理互连。 油墨配方包括悬浮在生长溶液中的多个纳米结构。

公开(公告)号：US07833616B2

公开(公告)日：2010-11-16

申请号：US11281192

申请日：2005-11-16

申请人： Yoocharn Jeon ,  Alfred I-Tsung Pan ,  Hou T. Ng ,  Scott Haubrich

发明人： Yoocharn Jeon ,  Alfred I-Tsung Pan ,  Hou T. Ng ,  Scott Haubrich

IPC分类号： H01L27/14

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  C09D11/30 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/762 ,  Y10T428/24975 ,  H01L2924/00

摘要： A self-aligning nanowire includes a nanowire portion and an aligning member attached to the nanowire portion. The aligning member interacts with another aligning member on an adjacent self-aligning nanowire to align the nanowires together. A method of aligning nanowires includes providing a plurality of the self-aligning nanowires, suspending the plurality in a carrier solution, and depositing the suspended plurality on a substrate. An ink formulation includes the plurality of suspended self-aligning nanowires in the carrier solution. A method of producing the self-aligning nanowire includes providing and associating the nanowire portion and the aligning member such that the nanowire produced is self-aligning with another nanowire.

摘要翻译： 自对准纳米线包括纳米线部分和连接到纳米线部分的对准部件。 对准构件与相邻的自对准纳米线上的另一对准构件相互作用，以将纳米线对准在一起。 对准纳米线的方法包括提供多个自对准纳米线，将多个悬浮在载体溶液中，并将悬浮的多个沉积在基底上。 油墨制剂包含载体溶液中的多个悬浮的自对准纳米线。 制造自对准纳米线的方法包括提供和结合纳米线部分和对准部件，使得所生产的纳米线与另一纳米线自对准。

公开(公告)号：US20070202620A1

公开(公告)日：2007-08-30

申请号：US11689487

申请日：2007-03-21

申请人： Alfred Pan ,  Yoocharn Jeon ,  Hou Ng ,  Scott Haubrich

发明人： Alfred Pan ,  Yoocharn Jeon ,  Hou Ng ,  Scott Haubrich

IPC分类号： H01L21/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L27/1292 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/78696

摘要： Crystal growth performed in situ facilitates interconnection of prefabricated nano-structures. The nano-structures are immersed in a growth solution having a controllable saturation condition. Changing the saturation condition of the solution modifies a size of the immersed nanowires. The solution includes a solute of a nano-structure precursor material. The saturation condition is changed to one or both etch material from a surface of the nano-structures and initiate crystal growth on the nano-structure surface. A nano-structure interconnection system includes the growth solution and equipment to deposit the prefabricated nano-structures on a substrate. An interconnected structure includes a plurality of nano-structures disposed on a substrate in a cluster and a liquid phase-grown crystal lattice on surfaces of the nano-structures to form physical interconnections between the plurality. An ink formulation includes the plurality of nano-structures suspended in the growth solution.

摘要翻译： 在原位进行的晶体生长促进了预制纳米结构的互连。 将纳米结构浸入具有可控饱和条件的生长溶液中。 改变溶液的饱和条件会改变浸入的纳米线的尺寸。 该溶液包括纳米结构前体材料的溶质。 饱和条件从纳米结构的表面改变为一种或两种蚀刻材料，并引发纳米结构表面上的晶体生长。 纳米结构互连系统包括生长溶液和将预制纳米结构沉积在基底上的设备。 互连结构包括布置在簇中的衬底上的多个纳米结构和在纳米结构的表面上的液相生长晶格，以形成多个之间的物理互连。 油墨配方包括悬浮在生长溶液中的多个纳米结构。

公开(公告)号：US20070111503A1

公开(公告)日：2007-05-17

申请号：US11281192

申请日：2005-11-16

申请人： Yoocharn Jeon ,  Alfred Pan ,  Hou Ng ,  Scott Haubrich

发明人： Yoocharn Jeon ,  Alfred Pan ,  Hou Ng ,  Scott Haubrich

IPC分类号： H01L21/4763 ,  H01L23/48

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  C09D11/30 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/762 ,  Y10T428/24975 ,  H01L2924/00

摘要： A self-aligning nanowire includes a nanowire portion and an aligning member attached to the nanowire portion. The aligning member interacts with another aligning member on an adjacent self-aligning nanowire to align the nanowires together. A method of aligning nanowires includes providing a plurality of the self-aligning nanowires, suspending the plurality in a carrier solution, and depositing the suspended plurality on a substrate. An ink formulation includes the plurality of suspended self-aligning nanowires in the carrier solution. A method of producing the self-aligning nanowire includes providing and associating the nanowire portion and the aligning member such that the nanowire produced is self-aligning with another nanowire.

摘要翻译： 自对准纳米线包括纳米线部分和连接到纳米线部分的对准部件。 对准构件与相邻的自对准纳米线上的另一对准构件相互作用，以将纳米线对准在一起。 对准纳米线的方法包括提供多个自对准纳米线，将多个悬浮在载体溶液中，并将悬浮的多个沉积在基底上。 油墨制剂包含载体溶液中的多个悬浮的自对准纳米线。 制造自对准纳米线的方法包括提供和结合纳米线部分和对准部件，使得所生产的纳米线与另一纳米线自对准。

公开(公告)号：US20050074589A1

公开(公告)日：2005-04-07

申请号：US10665335

申请日：2003-09-18

申请人： Alfred Pan ,  Yoocharn Jeon ,  Scott Haubrich

发明人： Alfred Pan ,  Yoocharn Jeon ,  Scott Haubrich

IPC分类号： B41M1/06 ,  B41M1/10 ,  B41M1/12 ,  B41M3/00 ,  C09D11/00 ,  H05K1/09 ,  B32B3/00

CPC分类号： H05K1/097 ,  B41M1/06 ,  B41M1/10 ,  B41M1/12 ,  B41M3/006 ,  B82Y30/00 ,  C09D11/30 ,  H01L29/7869 ,  H05K2201/0248 ,  Y10S977/786 ,  Y10T29/49117 ,  Y10T29/49124 ,  Y10T428/24893

摘要： Compositions and methods for production of conductive paths can include a printable composition including a liquid carrier and a plurality of nanostructures. The plurality of nanostructures can have an aspect ratio of at least about 5:1 within the liquid carrier. Examples of nanostructures include nanobelts, nanoplates, nanodiscs, nanowires, nanorods, and mixtures of these materials. These printable compositions can be used to form a conductive path on a substrate. The printable composition can be applied to a substrate using any number of conventional printing techniques. Following application of the printable composition, at least a portion of the liquid carrier can be removed such that the nanostructures can be in sufficient contact to provide a conductive path. The nanostructures arranged in a conductive path can be sintered or used as a conductive material without sintering.

摘要翻译： 用于制备导电路径的组合物和方法可以包括可印刷组合物，其包括液体载体和多个纳米结构。 多个纳米结构可以在液体载体内具有至少约5:1的纵横比。 纳米结构的实例包括纳米带，纳米板，纳米棒，纳米线，纳米棒以及这些材料的混合物。 这些可印刷组合物可用于在基材上形成导电路径。 可印刷组合物可以使用任何数量的常规印刷技术施加到基材上。 在施加可印刷组合物之后，可以除去液体载体的至少一部分，使得纳米结构可以充分接触以提供导电路径。 布置在导电路径中的纳米结构可以烧结或用作导电材料而不进行烧结。

公开(公告)号：US20060205240A1

公开(公告)日：2006-09-14

申请号：US11077830

申请日：2005-03-11

申请人： Alfred Pan ,  Yoocharn Jeon ,  Hou Ng ,  Scott Haubrich

发明人： Alfred Pan ,  Yoocharn Jeon ,  Hou Ng ,  Scott Haubrich

IPC分类号： H01L21/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L27/1292 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/78696

摘要： Crystal growth performed in situ facilitates interconnection of prefabricated nano-structures. The nano-structures are immersed in a growth solution having a controllable saturation condition. Changing the saturation condition of the solution modifies a size of the immersed nanowires. The solution includes a solute of a nano-structure precursor material. The saturation condition is changed to one or both etch material from a surface of the nano-structures and initiate crystal growth on the nano-structure surface. A nano-structure interconnection system includes the growth solution and equipment to deposit the prefabricated nano-structures on a substrate. An interconnected structure includes a plurality of nano-structures disposed on a substrate in a cluster and a liquid phase-grown crystal lattice on surfaces of the nano-structures to form physical interconnections between the plurality. An ink formulation includes the plurality of nano-structures suspended in the growth solution.

公开(公告)号：US20060197064A1

公开(公告)日：2006-09-07

申请号：US11070657

申请日：2005-03-02

申请人： Alfred Pan ,  Scott Haubrich

发明人： Alfred Pan ,  Scott Haubrich

IPC分类号： H01B1/12

CPC分类号： H05K1/097 ,  H01B1/22 ,  H01B1/24 ,  H01L21/288 ,  H01L21/76801 ,  H01L29/78681 ,  H01L29/7869 ,  H05K2201/0248 ,  H05K2201/0272 ,  H05K2201/0323 ,  Y10T428/2982

摘要： A printable composition for use in forming a printed element by printing and curing is described. The printable composition comprises a plurality of nanostructures of a first type that, upon printing and curing, form an arrangement defining intermediate volumes thereamong. The printable composition further comprises a plurality of nanostructures of a second type that, upon printing and curing, at least partially fill the intermediate volumes to promote smooth surface topography and reduced porosity in the printed element.

摘要翻译： 描述了通过印刷和固化形成印刷元件的可印刷组合物。 可印刷组合物包括第一类型的多个纳米结构，其在印刷和固化时形成限定中间体积的布置。 可印刷组合物还包括第二类型的多个纳米结构，其在印刷和固化时至少部分地填充中间体积以促进印刷元件中的光滑表面形貌和降低的孔隙率。

公开(公告)号：US20120138856A1

公开(公告)日：2012-06-07

申请号：US13381532

申请日：2010-07-01

申请人： Scott Haubrich ,  Jainisha Shah ,  Liam Noailles ,  Gary Darsey ,  Richard Einhorn ,  James Brewster

发明人： Scott Haubrich ,  Jainisha Shah ,  Liam Noailles ,  Gary Darsey ,  Richard Einhorn ,  James Brewster

IPC分类号： C09K11/77

CPC分类号： C09K11/7777 ,  B41M3/144 ,  C09K11/7769 ,  C09K11/7774 ,  C09K11/7787 ,  C09K11/7795 ,  D21H21/40 ,  G07D7/1205

摘要： A phosphor composition comprises a host lattice, a dopant and a decay modifying component different from the dopant and the host lattice and effective to alter the rate of decay of the radiation emitted by the phosphor composition in response to excitation by photons of a given energy. The decay modifying component is added to the phosphor composition in a predetermined amount between 1 and 10,000 parts per million of the composition. By varying the amount of the decay modifying component added to the phosphor composition, it is possible to produce a set of phosphor compositions with different, controlled rates of decay of the radiation emitted by the compositions.

摘要翻译： 磷光体组合物包括主体晶格，掺杂剂和不同于掺杂剂和主晶格的衰变修饰组分，并且有效地改变响应于给定能量的光子的激发而由磷光体组合物发射的辐射的衰减速率。 将该衰变改性成分以组合物的百万分之1至10,000份之间的预定量添加到荧光体组合物中。 通过改变添加到荧光体组合物中的衰变改性成分的量，可以产生一组具有由组合物发射的辐射具有不同的，受控的衰减速率的荧光粉组合物。

公开(公告)号：US07553545B2

公开(公告)日：2009-06-30

申请号：US11373696

申请日：2006-03-10

申请人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

发明人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

IPC分类号： B32B9/04 ,  B32B13/04 ,  H01L21/00 ,  H01L21/20 ,  H01L21/84

CPC分类号： C23C18/14 ,  C09D11/52 ,  C23C18/1204 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1275 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02636 ,  H01L29/66757 ,  Y10T428/24802 ,  Y10T428/24926 ,  Y10T428/31663

摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

摘要翻译： 用于形成图案化含硅膜的组合物，油墨和方法以及包括这种膜的图案化结构。 组合物通常包括（a）钝化的半导体纳米颗粒和（b）其中环状物质主要含有Si和/或Ge原子的第一和第二环状IVA族化合物。 油墨通常包括组合物和其中组合物可溶的溶剂。 该方法通常包括以下步骤：（1）在基材上印刷组合物或油墨以形成图案，和（2）固化图案化的组合物或油墨。 在替代实施方案中，该方法包括以下步骤：（i）固化半导体纳米颗粒组合物或至少一种环状IVA族化合物以形成薄膜，（ii）将薄膜与另一种膜相涂，和（iii）固化 涂覆的薄膜形成半导体薄膜。 半导体薄膜包括在氢化，至少部分非晶硅和/或锗中的半导体纳米颗粒的烧结混合物。 相对于通过相同方法制造的其它相同结构，但不含半导体纳米颗粒或氢化IVA族元素聚合物，该薄膜表现出改进的导电性，密度，粘附性和/或载流子迁移率。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时能够在数秒或数分钟而不是几小时或几天内形成这种薄膜的高通量印刷工艺， 与传统的光刻工艺。