Diamond-like carbon encapsulation of magnetic heads
    1.
    发明授权
    Diamond-like carbon encapsulation of magnetic heads 失效
    钻石状碳封装磁头

    公开(公告)号:US5718949A

    公开(公告)日:1998-02-17

    申请号:US722910

    申请日:1996-09-27

    IPC分类号: G11B5/31 C23C16/26 G11B5/127

    CPC分类号: G11B5/3106

    摘要: A thin film magnetic transducer supported on a substrate includes a coil that terminates at pads supported on the substrate. A layer of diamond-like carbon material encapsulates the head, substrate and coil, but not the pads. A thin layer of diamond-like carbon is deposited over the exposed portions of the transducer, coil and substrate. Three techniques are described for exposing the pads including employing a photoresist mask, depositing an adhesive layer of silicon over the conductive paths but not the pads, and using a photoresist mask to etch the diamond-like carbon layer over the pads and breaking down the silicon adhesive layer with a design voltage.

    摘要翻译: 支撑在基板上的薄膜磁换能器包括终止在衬底上的衬垫上的线圈。 一层类似钻石的碳材料封装了头部,基底和线圈,但不包括垫片。 在传感器,线圈和基板的暴露部分上沉积一层类似金刚石的碳。 描述了三种技术,用于曝光焊盘,包括采用光致抗蚀剂掩模,在导电路径上沉积硅粘合剂层而不是焊盘,并且使用光致抗蚀剂掩模在焊盘上蚀刻类金刚石碳层并分解硅 具有设计电压的粘合剂层。

    Diamond-like carbon wet etchant stop for formation of magnetic
transducers
    2.
    发明授权
    Diamond-like carbon wet etchant stop for formation of magnetic transducers 失效
    钻石状碳湿蚀刻剂停止形成磁性换能器

    公开(公告)号:US5681426A

    公开(公告)日:1997-10-28

    申请号:US571469

    申请日:1995-12-13

    摘要: A magnetic structure is formed by depositing a layer of diamond-like carbon onto the exposed surface of an a first material and depositing a layer of second material onto the layer of diamond-like carbon. A photoresist is applied to the exposed surface of the second layer and is patterned in the form of the desire structure. The exposed portions of the second layer are removed with a wet etchant that does not attack the diamond-like carbon layer. Thereafter, any remaining photoresist is removed.

    摘要翻译: 通过在第一材料的暴露表面上沉积一层类金刚石碳并将一层第二材料沉积到类金刚石碳层上而形成磁性结构。 将光致抗蚀剂施加到第二层的暴露表面,并以期望结构的形式进行图案化。 用不侵蚀类金刚石碳层的湿蚀刻剂去除第二层的暴露部分。 此后,除去任何剩余的光致抗蚀剂。

    Diamond-like carbon encapsulation of magnetic heads
    3.
    发明授权
    Diamond-like carbon encapsulation of magnetic heads 失效
    钻石状碳封装磁头

    公开(公告)号:US5640292A

    公开(公告)日:1997-06-17

    申请号:US587270

    申请日:1996-01-17

    IPC分类号: G11B5/31 G11B5/127

    CPC分类号: G11B5/3106

    摘要: A thin film magnetic transducer supported on a substrate includes a coil that terminates at pads supported on the substrate. A layer of diamond-like carbon material encapsulates the head, substrate and coil, but not the pads. A thin layer of diamond-like carbon is deposited over the exposed portions of the transducer, coil and substrate. Three techniques are described for exposing the pads including employing a photoresist mask, depositing an adhesive layer of silicon over the conductive paths but not the pads, and using a photoresist mask to etch the diamond-like carbon layer over the pads and breaking down the silicon adhesive layer with a design voltage.

    摘要翻译: 支撑在基板上的薄膜磁换能器包括终止在衬底上的衬垫上的线圈。 一层类似钻石的碳材料封装了头部,基底和线圈,但不包括垫片。 在传感器,线圈和基板的暴露部分上沉积一层类似金刚石的碳。 描述了三种技术,用于曝光焊盘,包括采用光致抗蚀剂掩模,在导电路径上沉积硅粘合剂层而不是焊盘,并且使用光致抗蚀剂掩模在焊盘上蚀刻类金刚石碳层并分解硅 具有设计电压的粘合剂层。

    Diamond-like carbon and oxide bilayer insulator for magnetoresistive transducers
    4.
    发明授权
    Diamond-like carbon and oxide bilayer insulator for magnetoresistive transducers 失效
    用于磁阻换能器的类金刚石碳和氧化物双层绝缘体

    公开(公告)号:US06215630B1

    公开(公告)日:2001-04-10

    申请号:US08741277

    申请日:1996-10-30

    IPC分类号: G11B533

    摘要: A magnetic structure is formed by depositing a layer of diamond-like carbon onto the exposed surface of an a first material and depositing a layer of second material onto the layer of diamond-like carbon. A photoresist is applied to the exposed surface of the second layer and is patterned in the form of the desire structure. The exposed portions of the second layer are removed with a wet etchant that does not attack the diamond-like carbon layer. Thereafter, any remaining photoresist is removed.

    摘要翻译: 通过在第一材料的暴露表面上沉积一层类金刚石碳并将一层第二材料沉积到类金刚石碳层上形成磁性结构。 将光致抗蚀剂施加到第二层的暴露表面,并以期望结构的形式进行图案化。 用不侵蚀类金刚石碳层的湿蚀刻剂去除第二层的暴露部分。 此后,除去任何剩余的光致抗蚀剂。

    Diamond-like carbon for ion milling magnetic material
    5.
    发明授权
    Diamond-like carbon for ion milling magnetic material 失效
    用于离子研磨磁性材料的类金刚石碳

    公开(公告)号:US5658470A

    公开(公告)日:1997-08-19

    申请号:US571395

    申请日:1995-12-13

    摘要: A diamond-like carbon mask is formed on the surface of the magnetic material for ion-milling the magnetic material into a magnetic pole of a transducer. The mask is formed by depositing a layer of diamond-like carbon over the magnetic material. Successive layers of photoresist, SiO.sub.2 and photoresist are applied over the magnetic material. The second layer of photoresist is patterned in the shape of the pole being formed. The exposed insulating layer is etched with an etchant that does not attack the diamond-like carbon, the exposed portions of the photoresist are exposed and removed, and the exposed portion of the diamond-like carbon is etched with an oxygen etchant. The remaining photoresist is washed away to remove the remaining insulating material. In one form of the invention, a layer of SiO.sub.2 may additionally be formed over the diamond-like carbon to protect the diamond-like carbon from being affected by any undercut of the photoresist by the oxygen etchant. The SiO.sub.2 layer is etched prior to etching the diamond-like carbon. The mask is used to ion mill the magnetic material to the desired pole.

    摘要翻译: 在磁性材料的表面上形成类金刚石碳掩模,用于将磁性材料离子研磨成换能器的磁极。 掩模通过在磁性材料上沉积一层类金刚石碳而形成。 光致抗蚀剂,SiO 2和光致抗蚀剂的连续层被施加在磁性材料上。 第二层光致抗蚀剂被图案化成形成的极的形状。 暴露的绝缘层用不侵蚀类金刚石碳的蚀刻剂蚀刻,光刻胶的暴露部分被暴露和去除,并且用氧蚀刻剂蚀刻类金刚石碳的暴露部分。 洗去剩余的光致抗蚀剂以除去剩余的绝缘材料。 在本发明的一种形式中,还可以在类金刚石碳之上形成SiO 2层,以保护类金刚石碳免受氧蚀刻剂的光刻胶的任何底切的影响。 在蚀刻类金刚石碳之前蚀刻SiO 2层。 该掩模用于将磁性材料离子研磨到所需的极点。

    Step shape tailoring by phase angle variation RF bias sputtering
    7.
    发明授权
    Step shape tailoring by phase angle variation RF bias sputtering 失效
    通过相位角变化RF偏置溅射对步进形状进行裁剪

    公开(公告)号:US4584079A

    公开(公告)日:1986-04-22

    申请号:US540246

    申请日:1983-10-11

    摘要: Disclosed is a method for tailoring the shape of a dielectric layer covering a step in a semiconductor device. The method comprises placing a semiconductor device comprising the step into a low pressure ionization chamber comprising a target electrode and a substrate electrode; connecting a sample of the dielectric to the target electrode; placing the semiconductor device comprising the step onto the substrate electrode; powering the target electrode and the substrate electrode with a radio frequency power having an electrical phase angle between the substrate electrode and the target electrode; and adjusting the electrical phase angle to obtain the desired shape of the dielectric layer covering the step.

    摘要翻译: 公开了一种用于调整覆盖半导体器件中的台阶的电介质层的形状的方法。 该方法包括将包括步骤的半导体器件放置在包括目标电极和衬底电极的低压电离室中; 将电介质的样品连接到靶电极; 将包括该步骤的半导体器件放置在衬底电极上; 用具有基板电极和目标电极之间的电相角的射频功率为目标电极和基板电极供能; 并且调整电相角以获得覆盖该步骤的介电层的期望形状。