摘要:
The present invention relates to a novel dosage form, to a process for preparing the dosage form and to the use of the dosage form in the treatment of neurological and psychiatric disorders.
摘要:
A method for forming a gate structure, comprising: providing a substrate, where the substrate includes a nMOSFET area and a pMOSFET area, each of the nMOSFET area and the pMOSFET area has a gate trench, and each of the gate trenches is provided at a bottom portion with a gate dielectric layer; forming a gate dielectric capping layer on the substrate; forming an etching stop layer on the gate dielectric capping layer; forming an oxygen scavenging element layer on the etching stop layer; forming a first work function adjustment layer on the oxygen scavenging element layer; etching the first work function adjustment layer above the nMOSFET area; forming a second work function adjustment layer on the surface of the substrate; metal layer depositing and annealing to fill the gate trenches with a metal layer; and removing the metal layer outside the gate trenches.
摘要:
An embodiment of the present disclosure provides a method for forming a gate structure, comprising: providing a substrate, where the substrate includes a nMOSFET area and a pMOSFET area, each of the nMOSFET area and the pMOSFET area has a gate trench, and each of the gate trenches is provided at a bottom portion with a gate dielectric layer; forming a gate dielectric capping layer on a surface of the substrate; forming an oxygen scavenging element layer on the gate dielectric capping layer; forming an etching stop layer on the oxygen scavenging element layer; forming a work function adjustment layer on the etching stop layer; performing metal layer deposition and annealing process to fill the gate trenches with a metal layer; and removing the metal layer outside the gate trenches.
摘要:
Compounds of general formula I: and compositions comprising compounds of general formula I that modulate pyruvate kinase are described herein. Also described herein are methods of using the compounds that modulate pyruvate kinase in the treatment of diseases.
摘要:
The present invention relates to a method of manufacturing a semiconductor device. After depositing the metal gate electrode material, a layer of oxygen molecule catalyzing layer having a catalyzing function to the oxygen molecules is deposited, and afterwards, a low-temperature PMA annealing process is used to decompose the oxygen molecules in the annealing atmosphere into more active oxygen atoms. These oxygen atoms are diffused into the high-k gate dielectric film through the metal gate to supplement the oxygen vacancies in the high-k film, in order to alleviate oxygen vacancies in the high-k film and improve the quality of the high-k film. According to the present invention, the oxygen vacancies and defects of high-k gate dielectric film will be alleviated, and further, growth of SiOx interface layer having a low dielectric constant caused by the traditional PDA high temperature process may be prevented. Thereby, the EOT of the entire gate dielectric layer may be effectively controlled, and the MOS device may be continuously scaled. Meanwhile, the present invention further provides a semiconductor device obtained according to the above-mentioned method.
摘要:
The present invention relates to a semiconductor device. Interface layers of different thickness or different materials are used in the NMOS region and the PMOS region of the semiconductor substrate, which not only effectively reduce EOT of the device, especially EOT of the PMOS device, but also increase the electron mobility of the device, especially the electron mobility of the NMOS device, thereby effectively improving the overall performance of the device.
摘要:
A character display technique relating to computer information processing to improve the display of characters. Whether a thickening process on a glyph outline corresponding to a character to be displayed is needed is determined by calculating a mean grayscale value of pixels of a grayscale bitmap of the glyph outline. if thickening is to be performed, the thickening amount is determined on the basis of the mean grayscale value of pixels, and the thickened glyph outline is output for display, thereby minimizing problems of fading of the displayed color, fuzzy strokes and the like due to strokes that are too narrow, and thus improving the character display effect.
摘要:
Compounds of general formula (I) and compositions comprising compounds of general formula (I) that modulate pyruvate kinase are described herein. Also described herein are methods of using the compounds that modulate pyruvate kinase in the treatment of diseases.
摘要:
Compounds of general formula I: and compositions comprising compounds of general formula I that modulate pyruvate kinase are described herein. Also described herein are methods of using the compounds that modulate pyruvate kinase in the treatment of diseases.
摘要:
A semiconductor device is provided. A multi-component high-k interface layer containing elements of the substrate is formed from an ultra-thin high-k dielectric material in a single-layer structure of atoms by rapid annealing in the manufacturing of a CMOS transistor by the replacement gate process, and a high-k gate dielectric layer with a higher dielectric constant and a metal gate layer are formed thereon. The EOT of the device is effectively decreased, and the diffusion of atoms in the high-k gate dielectric layer from an upper level thereof is effectively prevented by the optimized high-k interface layer at high-temperature treatment.