利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

7 条记录 (耗时 0.022 秒)

    Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices
    2.
    发明授权
    Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices 有权
    用于高压碳化硅半导体器件的环境坚固的钝化结构

    公开(公告)号：US07598576B2

    公开(公告)日：2009-10-06

    申请号：US11328550

    申请日：2006-01-10

    申请人： Allan Ward, III ,  Jason Patrick Henning

    发明人： Allan Ward, III ,  Jason Patrick Henning

    IPC分类号： H01L29/15 ,  H01L31/0256

    CPC分类号： H01L21/0217 ,  H01L21/02271 ,  H01L21/045 ,  H01L21/3145 ,  H01L21/318 ,  H01L21/3185 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/405 ,  H01L29/6606 ,  H01L29/732 ,  H01L29/74 ,  H01L29/78 ,  H01L29/868 ,  H01L29/872

    摘要： An improved termination structure for high field semiconductor devices in silicon carbide is disclosed. The termination structure includes a silicon carbide-based device for high-field operation, an active region in the device, an edge termination passivation for the active region, in which the edge termination passivation includes, an oxide layer on at least some of the silicon carbide portions of the device for satisfying surface states and lowering interface density, a non-stoichiometric layer of silicon nitride on the oxide layer for avoiding the incorporation of hydrogen and for reducing parasitic capacitance and minimizing trapping, and, a stoichiometric layer of silicon nitride on the nonstoichiometric layer for encapsulating the nonstoichiometric layer and the oxide layer.

    摘要翻译： 公开了一种用于碳化硅中的高场半导体器件的改进的端接结构。 端接结构包括用于高场操作的基于碳化硅的器件，器件中的有源区，用于有源区的边缘终止钝化，其中边缘终端钝化包括在至少一些硅上的氧化物层 用于满足表面状态和降低界面密度的器件的碳化物部分，在氧化物层上的非化学计量的氮化硅层，用于避免引入氢并减少寄生电容并最小化陷阱，以及化学计量的氮化硅层 用于封装非化学计量层和氧化物层的非化学计量层。

    Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
    4.
    发明授权
    Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices 有权
    用于SiC半导体器件的富含硅的硅化镍欧姆接触

    公开(公告)号：US07875545B2

    公开(公告)日：2011-01-25

    申请号：US12020731

    申请日：2008-01-28

    申请人： Allan Ward, III ,  Jason Patrick Henning ,  Helmut Hagleitner ,  Keith Dennis Wieber

    发明人： Allan Ward, III ,  Jason Patrick Henning ,  Helmut Hagleitner ,  Keith Dennis Wieber

    IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/44

    CPC分类号： H01L29/1608 ,  H01L21/0455 ,  H01L21/0485 ,  H01L29/45 ,  Y10S438/931

    摘要： A method of producing an ohmic contact and a resulting ohmic contact structure are disclosed. The method includes the steps of forming a deposited film of nickel and silicon on a silicon carbide surface at a temperature below which either element will react with silicon carbide and in respective proportions so that the atomic fraction of silicon in the deposited film is greater than the atomic fraction of nickel, and heating the deposited film of nickel and silicon to a temperature at which nickel-silicon compounds will form with an atomic fraction of silicon greater than the atomic fraction of nickel but below the temperature at which either element will react with silicon carbide. The method can further include the step of annealing the nickel-silicon compound to a temperature higher than the heating temperature for the deposited film, and within a region of the phase diagram at which free carbon does not exist.

    摘要翻译： 公开了一种制造欧姆接触和产生的欧姆接触结构的方法。 该方法包括以下步骤：在碳化硅表面上形成沉积的镍和硅的膜，其温度低于任何一种元素将与碳化硅反应并以相应的比例使沉积膜中硅的原子比分数大于 将镍和硅的原子分数加热至镍 - 硅化合物形成的温度，其中硅的原子分数大于镍的原子分数，但低于任一元素将与硅反应的温度 碳化物。 该方法还可以包括将镍硅化合物退火至高于沉积膜的加热温度的温度，并且在不存在游离碳的相图的区域内。