公开(公告)号：US20060115964A1

公开(公告)日：2006-06-01

申请号：US11001461

申请日：2004-11-30

申请人： Alp Findikoglu ,  Quanxi Jia ,  Paul Arendt ,  Vladimir Matias ,  Woong Choi

发明人： Alp Findikoglu ,  Quanxi Jia ,  Paul Arendt ,  Vladimir Matias ,  Woong Choi

IPC分类号： B32B13/04 ,  B32B15/04 ,  H01L21/20

CPC分类号： C30B29/06 ,  C30B25/18 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/02658

摘要： A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800° C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800° C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

公开(公告)号：US20060033160A1

公开(公告)日：2006-02-16

申请号：US11245721

申请日：2005-10-06

申请人： Alp Findikoglu ,  Vladimir Matias

发明人： Alp Findikoglu ,  Vladimir Matias

IPC分类号： H01L27/12

CPC分类号： H01L31/022408 ,  C03C14/008 ,  C03C2214/32 ,  H01L31/022466 ,  H01L31/036 ,  H01L31/1884 ,  Y02E10/50

摘要： A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

摘要翻译： 用于双轴取向半导体膜生长的导电层和诸如光电检测器，光伏电池或发光二极管（LED）的薄膜半导体结构，其包括设置在导电层上的晶体学取向的半导体膜。 薄膜半导体结构包括：基板; 沉积在基板上的第一电极; 以及外延沉积在第一电极上的半导体层。 第一电极包括沉积在衬底上的模板层和外延沉积在模板层上的缓冲层。 模板层包括导电并具有岩盐晶体结构的第一金属氮化物，并且缓冲层包括导电的第二金属氮化物。 半导体层外延沉积在缓冲层上。 还描述了制造这种薄膜半导体结构的方法。