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    Methods and systems for determining a property of an insulating film
    4.
    发明授权
    Methods and systems for determining a property of an insulating film 有权
    用于确定绝缘膜性能的方法和系统

    公开(公告)号：US07358748B1

    公开(公告)日：2008-04-15

    申请号：US11291075

    申请日：2005-11-30

    申请人： Thomas G. Miller ,  Gregory S. Horner ,  Amin Samsavar ,  Zhiwei Xu ,  Patrick Stevens

    发明人： Thomas G. Miller ,  Gregory S. Horner ,  Amin Samsavar ,  Zhiwei Xu ,  Patrick Stevens

    IPC分类号： G01R27/08 ,  G01R27/26 ,  G01R31/302 ,  G01N27/60

    CPC分类号： H01L22/12 ,  G01R31/2831 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to current leakage and film thickness.

    摘要翻译： 提供一种用于确定绝缘膜的性质的方法。 该方法可以包括获得膜的电荷密度测量，膜相对于衬底的体电压电位的表面电压电势以及膜的电压衰减速率。 该方法还可以包括使用电荷密度，表面电压电位和电压衰减速率确定膜的性质。 提供一种确定绝缘膜厚度的方法。 该方法可以包括在膜上沉积电荷，测量膜相对于衬底的体电压电位的表面电压电位，以及测量膜的电压衰减速率。 该方法还可以包括使用电压衰减速率和与电流泄漏和膜厚度有关的理论模型来确定膜的厚度。

    Methods and systems for determining a property of an insulating film
    5.
    发明授权
    Methods and systems for determining a property of an insulating film 失效
    用于确定绝缘膜性能的方法和系统

    公开(公告)号：US07012438B1

    公开(公告)日：2006-03-14

    申请号：US10616086

    申请日：2003-07-09

    申请人： Thomas G. Miller ,  Gregory S. Horner ,  Amin Samsavar ,  Zhiwei Xu ,  Patrick Stevens

    发明人： Thomas G. Miller ,  Gregory S. Horner ,  Amin Samsavar ,  Zhiwei Xu ,  Patrick Stevens

    IPC分类号： G01R27/08 ,  G01R27/26 ,  G01N27/60

    CPC分类号： H01L22/12 ,  G01R31/2831 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to leakage and film thickness.

    摘要翻译： 提供一种用于确定绝缘膜的性质的方法。 该方法可以包括获得膜的电荷密度测量，膜相对于衬底的体电压电位的表面电压电势以及膜的电压衰减速率。 该方法还可以包括使用电荷密度，表面电压电位和电压衰减速率确定膜的性质。 提供一种确定绝缘膜厚度的方法。 该方法可以包括在膜上沉积电荷，测量膜相对于衬底的体电压电位的表面电压电位，以及测量膜的电压衰减速率。 该方法还可以包括使用电压衰减速率和与泄漏和膜厚度有关的理论模型来确定膜的厚度。

    Methods and systems for determining an electrical property of an insulating film
    6.
    发明授权
    Methods and systems for determining an electrical property of an insulating film 失效
    用于确定绝缘膜的电性能的方法和系统

    公开(公告)号：US07064565B1

    公开(公告)日：2006-06-20

    申请号：US10699352

    申请日：2003-10-31

    申请人： Zhiwei Xu ,  Thomas G. Miller ,  Jianou Shi ,  Gregory S. Horner

    发明人： Zhiwei Xu ,  Thomas G. Miller ,  Jianou Shi ,  Gregory S. Horner

    IPC分类号： G01R31/302 ,  G01R31/26

    CPC分类号： G01R31/129 ,  G01R31/2831

    摘要： Methods for determining a surface voltage of an insulating film are provided. One method includes depositing a charge on an upper surface of the insulating film and measuring a current to the wafer during deposition. The method also includes determining the surface voltage of the insulating film from the current. In this manner, the surface voltage is not measured, but is determined from a measured current. Another embodiment may include measuring a second current to the wafer during a high current mode deposition of a charge on the film and determining a second surface voltage of the film from the second current. This method may be repeated until a Q-V sweep is measured. An additional embodiment may include altering a control voltage during deposition of the charge such that a current to the wafer is substantially constant over time and determining charge vs. voltage data for the insulating film.

    摘要翻译： 提供了确定绝缘膜的表面电压的方法。 一种方法包括在绝缘膜的上表面上沉积电荷并在沉积期间测量到晶片的电流。 该方法还包括从电流确定绝缘膜的表面电压。 以这种方式，不测量表面电压，而是根据测量的电流确定。 另一个实施例可以包括在电荷的高电流模式沉积期间测量到晶片的第二电流，并从第二电流确定膜的第二表面电压。 可以重复该方法直到测量Q-V扫描。 附加实施例可以包括在沉积电荷期间改变控制电压，使得到晶片的电流随时间基本上是恒定的，并且确定绝缘膜的电荷对电压数据。

    Methods for imperfect insulating film electrical thickness/capacitance measurement
    7.
    发明授权
    Methods for imperfect insulating film electrical thickness/capacitance measurement 失效
    绝缘膜电气厚度/电容测量不完美的方法

    公开(公告)号：US07075318B1

    公开(公告)日：2006-07-11

    申请号：US10754332

    申请日：2004-01-09

    申请人： Xiafang (Michelle) Zhang ,  Zhiwei (Steve) Xu ,  Jianou Shi ,  Bao Vu ,  Thomas G. Miller ,  Gregory S. Horner

    发明人： Xiafang (Michelle) Zhang ,  Zhiwei (Steve) Xu ,  Jianou Shi ,  Bao Vu ,  Thomas G. Miller ,  Gregory S. Horner

    IPC分类号： G01R31/302 ,  G01R27/26

    CPC分类号： G01R31/2648 ,  G01R27/26 ,  G01R31/312

    摘要： Methods for determining an electrical parameter of an insulating film are provided. One method includes measuring a surface potential of a leaky insulating film without inducing leakage across the insulating film and determining the electrical parameter from the surface potential. Another method includes applying an electrical field across the insulating film. Leakage across the insulating film caused by the electrical field is negligible. The method also includes measuring a surface potential of the specimen and determining a potential of the substrate. In addition, the method includes determining a pure voltage across the insulating film from the surface potential and the substrate potential. The method further includes determining the electrical parameter from the pure voltage. The electrical parameter may be capacitance or electrical thickness of the insulating film.

    摘要翻译： 提供了确定绝缘膜的电参数的方法。 一种方法包括测量泄漏绝缘膜的表面电位，而不会导致绝缘膜上的泄漏并且从表面电位确定电参数。 另一种方法包括在绝缘膜上施加电场。 由电场引起的绝缘膜上的泄漏可忽略不计。 该方法还包括测量样品的表面电位并确定衬底的电位。 此外，该方法包括从表面电位和衬底电位确定绝缘膜两端的纯电压。 该方法还包括从纯电压确定电参数。 电气参数可以是绝缘膜的电容或电气厚度。

    Methods for imperfect insulating film electrical thickness/capacitance measurement
    8.
    发明授权
    Methods for imperfect insulating film electrical thickness/capacitance measurement 失效
    绝缘膜电气厚度/电容测量不完美的方法

    公开(公告)号：US07397254B1

    公开(公告)日：2008-07-08

    申请号：US11277053

    申请日：2006-03-21

    申请人： Xiafang (Michelle) Zhang ,  Zhiwei (Steve) Xu ,  Jianou Shi ,  Quoc-Bao Vu ,  Thomas G. Miller ,  Gregory S. Horner

    发明人： Xiafang (Michelle) Zhang ,  Zhiwei (Steve) Xu ,  Jianou Shi ,  Quoc-Bao Vu ,  Thomas G. Miller ,  Gregory S. Horner

    IPC分类号： G01R31/302

    CPC分类号： G01R31/2648 ,  G01R27/26 ,  G01R31/312

    摘要： Methods for determining an electrical parameter of an insulating film are provided. One method includes measuring a surface potential of a leaky insulating film without inducing leakage across the insulating film and determining the electrical parameter from the surface potential. Another method includes applying an electrical field across the insulating film. Leakage across the insulating film caused by the electrical field is negligible. The method also includes measuring a surface potential of the specimen and determining a potential of the substrate. In addition, the method includes determining a pure voltage across the insulating film from the surface potential and the substrate potential. The method further includes determining the electrical parameter from the pure voltage. The electrical parameter may be capacitance or electrical thickness of the insulating film.

    摘要翻译： 提供了确定绝缘膜的电参数的方法。 一种方法包括测量泄漏绝缘膜的表面电位，而不会导致绝缘膜上的泄漏并且从表面电位确定电参数。 另一种方法包括在绝缘膜上施加电场。 由电场引起的绝缘膜上的泄漏可忽略不计。 该方法还包括测量样品的表面电位并确定衬底的电位。 此外，该方法包括从表面电位和衬底电位确定绝缘膜两端的纯电压。 该方法还包括从纯电压确定电参数。 电气参数可以是绝缘膜的电容或电气厚度。

    Non-contact hysteresis measurements of insulating films
    9.
    发明授权
    Non-contact hysteresis measurements of insulating films 有权
    绝缘膜的非接触磁滞测量

    公开(公告)号：US06734696B2

    公开(公告)日：2004-05-11

    申请号：US10286358

    申请日：2002-11-01

    申请人： Gregory S. Horner ,  Thomas G. Miller

    发明人： Gregory S. Horner ,  Thomas G. Miller

    IPC分类号： G01R3102

    CPC分类号： G01N27/60 ,  G01N27/61

    摘要： Non-contact methods for determining a property of an insulating film are provided. One method includes measuring an amount of hysteresis in the insulating film without contacting the insulating film. The method also includes determining the amount of hysteresis in the insulating film. Computer-implemented methods for data analysis are also provided. One computer-implemented method includes determining a single numeric value representing an amount of hysteresis in an insulating film from electrical characteristics of the insulating film. The electrical characteristics are measured without contacting the insulating film. In addition, systems that include a measurement system and a computer-usable carrier medium are provided. The measurement system is configured to measure an amount of hysteresis in an insulating film without contacting the insulating film. The carrier medium includes program instructions, which are executable on a computer system for determining the amount of hysteresis in the insulating film using measurements from the measurement system.

    摘要翻译： 提供了用于确定绝缘膜的性质的非接触方法。 一种方法包括测量绝缘膜中的滞后量而不接触绝缘膜。 该方法还包括确定绝缘膜中的滞后量。 还提供了计算机实现的数据分析方法。 一种计算机实现的方法包括从绝缘膜的电特性确定表示绝缘膜中的滞后量的单个数值。 在不接触绝缘膜的情况下测量电特性。 此外，还提供了包括测量系统和计算机可用的载体介质的系统。 测量系统被配置为测量绝缘膜中的滞后量而不接触绝缘膜。 载体介质包括可在计算机系统上执行的程序指令，用于使用来自测量系统的测量来确定绝缘膜中的滞后量。

    Apparatus and method for depositing charge on a semiconductor wafer
    10.
    发明授权
    Apparatus and method for depositing charge on a semiconductor wafer 失效
    用于在半导体晶片上沉积电荷的装置和方法

    公开(公告)号：US5594247A

    公开(公告)日：1997-01-14

    申请号：US499326

    申请日：1995-07-07

    申请人： Roger L. Verkuil ,  Gregory S. Horner ,  Thomas G. Miller

    发明人： Roger L. Verkuil ,  Gregory S. Horner ,  Thomas G. Miller

    IPC分类号： H01L21/66 ,  H01T19/04

    CPC分类号： H01L22/14 ,  H01L22/20

    摘要： A conductive screen is placed between a corona gun and the surface of a semiconductor wafer. The charge deposited on the wafer by the gun is controlled by a potential applied to the screen. A chuck orients the wafer in close proximity to the screen. A desired charge is applied to the wafer by first applying a surplus of one charge to the wafer and then depositing an opposite polarity charge until the potential of the wafer equals the potential of the screen.

    摘要翻译： 将导电屏放置在电晕枪和半导体晶片的表面之间。 通过枪施加在晶片上的电荷由施加到屏幕的电位来控制。 卡盘将晶片定位在靠近屏幕的位置。 通过首先向晶片施加剩余的一次电荷，然后沉积相反极性的电荷，直到晶片的电位等于屏幕的电位，将期望的电荷施加到晶片。